Jiangsu Profile
Product List
1036. Tvs 400W Diode Sot-23 Pjdlc12 
[Mar 20, 2025]
[Mar 20, 2025] 400W TVS SOT-23 PJDLC05,PJDLC12,PJDLC15,PJDLC24 1.Datasheet: 2.Products list: SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS TYPE Breakdown Voltage Stand-off Voltage Maximum Reverse ...
1037. 400W Tvs Rectifier Diode Sot-23 Case Pjdlc05 [Mar 20, 2025]
[Mar 20, 2025] 400W TVS SOT-23 CASE PJDLC05 TO PJDLC24 1.Datasheet: 2.Products list: 3.Reliability Test List: 4.Product Picture: 5.Our Fair: 6.Contact Us: 7. FAQ: 1, Are ...
1038. 600W, Tvs Rectifier Diode P6SMB7.5A [Mar 20, 2025]
[Mar 20, 2025] 600W TVS P6SMB6.8CA TO P6SMB440A 1.Datasheet: 2.Products list: SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS TYPE Breakdown Voltage Stand-off Voltage Maximum Reverse Leakage @VRWM Maximum Peak ...
1039. 20A 600V Fast Recovery Diode Mur2060CT to-220 [Apr 01, 2025]
[Apr 01, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1040. 20A 400V Fast Recovery Diode Mur2040CT to-220 [Mar 24, 2025]
[Mar 24, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1041. Dh025n03, to-220, 150A 30V N-Channel Enhancement Mode Power Mosfet [Apr 08, 2025]
[Apr 08, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 150 A BVGSS ±20 V VTH 1 2 V EAS - - 565 mJ Ptot - - 130 W Rdson 2.5 - 3.2 mΩ Features Fast ...
1042. Tvs Diode 400W Sot-23 Pjdlc05 [Mar 20, 2025]
[Mar 20, 2025] 400W TVS SOT-23 PJDLC05,PJDLC12,PJDLC15,PJDLC24 1.Datasheet: 2.Products list: SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS TYPE Breakdown Voltage Stand-off Voltage Maximum Reverse ...
1043. SOD-523 Schottky Diode 200MW 30V Rb521s-30 [Mar 20, 2025]
[Mar 20, 2025] 200mW,30V,-SCHOTTKY DIODE-RB521S-30(SOD-523 CASE) 1.Datasheet: 2.Products list: SCHOTTKY BARRIER RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum ...
1044. Bilateral Voltage Triggered Switch Breakover Voltage 95-280V, Sidiac Diode-K2200g [Mar 20, 2025]
[Mar 20, 2025] Bilateral Voltage Triggered Switch Breakover Voltage 95-280V, SIDIAC DIODE-K1050G thru K2501G 1.Datasheet: 2.Products list: DIACS TYPE Breakover Voltage Maximum Maximum Peak ...
1045. 100A 68V N-Channel Enhancement Mode Power Mosfet Dh100n06f to-220 [Jun 24, 2024]
[Jun 24, 2024] Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features Low on ...
1046. 18A 1200V N-Channel Sic Power Mosfet Dhc1m160120d to-3p [Jun 24, 2024]
[Jun 24, 2024] 18A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
1047. 7A 1700V N-Channel Sic Power Mosfet Dhc1m650170d to-3p [Jun 24, 2024]
[Jun 24, 2024] 7.0A 1700V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
1048. 100A 1200V Half Bridge IGBT Module [Jun 24, 2024]
[Jun 24, 2024] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1049. 34mm 50A 1200V Half Bridge IGBT Module [Jun 24, 2024]
[Jun 24, 2024] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1050. 1200V 65A N-Channel Sic Power Mosfet to-3p Dhc1m025120d [Jun 24, 2024]
[Jun 24, 2024] 65A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
