Jiangsu Profile
Product List
1096. 700V 10A N-Channel Enhancement Mode Power Mosfet F10n70 to-220f 
[Sep 02, 2025]
[Sep 02, 2025] PARAMETER SYMBOL VALUE UNIT 10N70/I10N70/E10N70 F10N70 Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
1097. 7A 650V N-Channel Enhancement Mode Power Mosfet D7n65 to-252 [Sep 02, 2025]
[Sep 02, 2025] PARAMETER SYMBOL VALUE UNIT 7N65/I7N65/E7N65/B7N65/D7N65 F7N65 Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
1098. 80A 60V N-Channel Enhancement Mode Power Mosfet Dhs095n06D to-252 [Sep 01, 2025]
[Sep 01, 2025] PARAMETER SYMBOL VALUE UNIT DHS095N06/DHS095N06I/DHS095N06E/DHS095N06B/DHS095N06D DHS095N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1099. 60A 400V Fast Recovery Diode Mur6040DCT to-3p [Sep 01, 2025]
[Sep 01, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1100. 60A 20V N-Channel Enhancement Mode Power Mosfet Dh048n02D to-252 [Sep 01, 2025]
[Sep 01, 2025] PARAMETER SYMBOL VALUE UNIT DH048N02B/DH048N02D Drian-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±12 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 42 A Drain ...
1101. 5A 600V N-Channel Enhancement Mode Power Mosfet 5n60 to-220c [Sep 01, 2025]
[Sep 01, 2025] PARAMETER SYMBOL VALUE UNIT 5N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.6 A Drain ...
1102. 30A 1200V Fast Recovery Diode Mur30120 to-220-2L [Oct 28, 2025]
[Oct 28, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1103. High Quality Three-Phase SCR Tiristor Power Regulator Cabinet for Voltage Control AC Current Type [Dec 02, 2025]
[Dec 02, 2025] Product Description High-Quality Construction: Proudly presenting the POWERPASSION brand three-phase Automatic AC Power Controller, an epitome of superior craftsmanship and direct-from-factory assurance, guaranteeing ...
1104. Thyristor Silicon Controlled Rectifier Series 2p4m to-126 [Jun 23, 2025]
[Jun 23, 2025] Description 2P4M Micro trigger series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic ...
1105. 7.5A 600V N-Channel Enhancement Mode Power Mosfet 8n60 to-220 [Jun 23, 2025]
[Jun 23, 2025] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with ...
1106. 650V 6A Sic Schottky Barrier Diode Sicf0665 to-220-2L [Jun 23, 2025]
[Jun 23, 2025] 6A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1107. Hot Sale 100V/15mΩ /50A N-Mosfet Dhs180n10ld to-252b [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT DHS180N10LD Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
1108. Hot Sale -100V/33mΩ /-35A P-Channel Enhancement Mode Power Mosfet Dh100p30d to-252b [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT DH100P30D Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -35 A (T=100ºC) -22 A Drain ...
1109. Dh025n03, to-220, 150A 30V N-Channel Enhancement Mode Power Mosfet [Sep 29, 2025]
[Sep 29, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 150 A BVGSS ±20 V VTH 1 2 V EAS - - 565 mJ Ptot - - 130 W Rdson 2.5 - 3.2 mΩ Features Fast ...
1110. Dh180n10 to-220 180A 100V N-Channel Enhancement Mode Power Mosfet [Aug 01, 2025]
[Aug 01, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 109 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1760 mJ Ptot - - 346 W Rdson 4.3 - 5.5 mΩ ...
