Jiangsu Profile
Product List
1126. Zhendi Supplier Semiconductor Double-Side Cooling High Current SCR Thyristor for Power Applications 
[Jun 09, 2025]
[Jun 09, 2025] Product Description Phase Control Thyristor: Revolutionize your power applications with our state-of-the-art Phase Control Thyristor, designed for enhanced precision and control in demanding ...
1127. China Professional Manufacturer Mtc 300A Thyristor SCR Phase Control Power Module [Jun 09, 2025]
[Jun 09, 2025] Product Description Thyristor Module High-Quality Construction: This SCR power control module is designed with high-quality components, ensuring reliable performance and durability in demanding applications, such ...
1128. SCR Durable Aluminum Heat Sink Extrusion Profiles Air Cooling Radiator [Jun 09, 2025]
[Jun 09, 2025] Product Description Product name Customized high quality sxf aluminum profile air-cooled radiator Material Aluminium Application Heat sink radio, wide heat sinks, modular heat sinks, radial profiles for LED ...
1129. Semiconductor Power Control SCR-Controlled Controller Adjust Current and Voltage SCR Voltage ... [Jun 05, 2025]
[Jun 05, 2025] Product Description High Voltage Capacity and Energy-Saving: Introducing the Powerpassion All SCR50A-180A/16E Pro, a marvel of innovation in high voltage capacity technology! This energy-saving controller stabilizer ...
1130. 1n4148W-Fast Switching Diode [Mar 20, 2025]
[Mar 20, 2025] 1N4148W,BAV16W,SOD-123 Packing diodes-Fast Switching diode We - Changzhou Shunye Electronics, co., Ltd, is located in Changzhou & Shanghai, is specialized in the manufacturing of diode. For 1N4148W,BAV16W,we provide ...
1131. 400W Tvs Sot-23 Diode Pjdlc24 [Mar 20, 2025]
[Mar 20, 2025] 400W TVS SOT-23 PJDLC05,PJDLC12,PJDLC15,PJDLC24 1.Datasheet: 2.Products list: SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS TYPE Breakdown Voltage Stand-off Voltage Maximum Reverse ...
1132. 400W Sot-23 Tvs Diode Pjdlc05 [Mar 20, 2025]
[Mar 20, 2025] 400W TVS SOT-23 PJDLC05,PJDLC12,PJDLC15,PJDLC24 1.Datasheet: 2.Products list: SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS TYPE Breakdown Voltage Stand-off Voltage Maximum Reverse ...
1133. 400W Sot-23 Tvs Diode Pjdlc12 [Mar 20, 2025]
[Mar 20, 2025] 400W TVS SOT-23 PJDLC05,PJDLC12,PJDLC15,PJDLC24 1.Datasheet: 2.Products list: SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS TYPE Breakdown Voltage Stand-off Voltage Maximum Reverse ...
1134. 40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40h120m2 to-247 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
1135. 250A 40V N-Channel Enhancement Mode Power Mosfet Dh019n04D to-252b [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH019N 04 DH019N04I DH019N04E DH019N04B DH019N04D DH019N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1136. 40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc40h65m2 to-247 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
1137. 5A 800V N-Channel Enhancement Mode Power Mosfet F5n80 to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 800 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3 A Drain ...
1138. 12A 100V N-Channel Enhancement Mode Power Mosfet Dh850n10b to-251b [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A (T=100ºC) 8 A Drain ...
1139. 20A 60V Low Vf Schottky Barrier Diode Hmbr20r60 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 60 V RMS Reverse Voltage VR(RMS) 42 V DC Blocking Voltage VR 60 V Average Rectified Forward Current IF(AV) 20 A Repetitive ...
1140. 40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40f120m2 to-247 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
