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30A 60V N-Channel Enhancement Mode Power Mosfet DHD30n06 to-252
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1231.

30A 60V N-Channel Enhancement Mode Power Mosfet DHD30n06 to-252 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHB30N06/DHD30N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 30 A (T=100ºC) 20 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 80V N-Channel Enhancement Mode Power Mosfet Dhe80n08 to-263
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1232.

80A 80V N-Channel Enhancement Mode Power Mosfet Dhe80n08 to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH80N08/DHI80N08/DHE80N08/DHB80N08/DHD80N08 DHF80N08 Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 200V Fast Recovery Diode Mur4020DCT to-3p
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1233.

40A 200V Fast Recovery Diode Mur4020DCT to-3p Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 200V Schottky Barrier Diode Mbr20200CT to-220
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1234.

20A 200V Schottky Barrier Diode Mbr20200CT to-220 Open Details in New Window [Jun 23, 2025]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12A 600V N-Channel Enhancement Mode Power Mosfet F12n60 to-220f
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1235.

12A 600V N-Channel Enhancement Mode Power Mosfet F12n60 to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 12N60/I12N60/ E12N60 F12N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

600V 10A N-Channel Enhancement Mode Power Mosfet 10n60 to-220
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1236.

600V 10A N-Channel Enhancement Mode Power Mosfet 10n60 to-220 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 10N60/I10N60/E10N60 F10N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 600V N-Channel Enhancement Mode Power Mosfet F10n60 to-220f
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1237.

10A 600V N-Channel Enhancement Mode Power Mosfet F10n60 to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 10N60/I10N60/E10N60 F10N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Insulated Gate Bipolar Transistor IGBT G60n65D to-247 **%off
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1238.

Insulated Gate Bipolar Transistor IGBT G60n65D to-247 **%off Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 400V Fast Recovery Diode Mur1640CT to-220
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1239.

16A 400V Fast Recovery Diode Mur1640CT to-220 Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

1200V 75A IGBT Module Dgc75c120m2t
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1240.

1200V 75A IGBT Module Dgc75c120m2t Open Details in New Window [Jun 23, 2025]

75A 1200V 6 in one-package 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Bt152 20A 600V Series 20A Scrs Transistor Triac Support Thyistor Customization
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1241.

Bt152 20A 600V Series 20A Scrs Transistor Triac Support Thyistor Customization Open Details in New Window [Jun 28, 2021]

ABOUT US FAQ: 1, Are you Manufacturer or trading company? We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price and fast delivery and good ...

Company: Jiangsu Zhongxin Semiconductor Co., Ltd.

4-20mA voltage output 80mm height min size Piezoresistive pressure sensor Hirschmann connector ...
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1242.

4-20mA voltage output 80mm height min size Piezoresistive pressure sensor Hirschmann connector ... Open Details in New Window [Nov 07, 2025]

Audited Supplier

HPM130 Compact Pressure Transmitter adopts advanced technology ,ingenious structure design, with miniaturized imported transmitter and precise digital signal. It can be used in narrow confines to meet the need of ...

Company: Nanjing Hangjia Electronic Technology Co., Ltd.

740 to-220 10A 400V N-Channel Enhancement Mode Power Mosfet
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1243.

740 to-220 10A 400V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Jul 02, 2025]

PARAMETER SYMBOL VALUE UNIT 740/I740/E740/B740/D740 F740 Drian-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

23A 500V N-Channel Enhancement Mode Power Mosfet 23n50d to-3pn
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1244.

23A 500V N-Channel Enhancement Mode Power Mosfet 23n50d to-3pn Open Details in New Window [Jul 02, 2025]

PARAMETER SYMBOL VALUE UNIT 23N50D Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30 to-220c
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1245.

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30 to-220c Open Details in New Window [Jul 02, 2025]

PARAMETER SYMBOL VALUE UNIT DH100P30/DH100P30I/DH100P30E/DH100P30B/DH100P30D DH100P30F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd