Jiangsu Profile
Product List
1231. Hot Selling Relay Single Phase SSR Solid State Safety Relay Miniature Size with High Power Contact ... 
[Feb 10, 2026]
[Feb 10, 2026] Product Description Solid State Relay High-Power Reliability: Discover the impeccable performance of our Miniature SSR Solid State Relay, equipped to handle high-power contact loads. This powerhouse is perfectly ...
1232. Rectifier Bridge for Welding Machine with Standard Peak Reverse Voltage [Dec 02, 2025]
[Dec 02, 2025] Product Description Product name UTG630-1600a six phase half wave fully controlled rectifier bridge for welding machine Color Silver Usage Welding machine Service 24 hours service Click here and send your ...
1233. High-Performance IGBT Thyristor Power Module for Efficient Rectification [Dec 02, 2025]
[Dec 02, 2025] Product Description Discover Top-Notch Thyristor Module Excellence: Introducing our MTC module, a paragon of engineering brilliance. This superior thyristor module is meticulously crafted to deliver unparalleled ...
1234. High-Performance 1600V SCR Thyristor Power Module for Efficient Control [Dec 02, 2025]
[Dec 02, 2025] Product Description Discover Top-Notch Thyristor Module Excellence: Introducing the MTC module, a pinnacle of thyristor module design, crafted to deliver unrivaled reliability and stellar performance. It's the ultimate ...
1235. Zhendi High-Efficiency Thyristor SCR Module for Reliable Power Systems [Dec 02, 2025]
[Dec 02, 2025] Product Description Thyristor Module High-Quality Construction: This SCR power control module is designed with high-quality components, ensuring reliable performance and durability in demanding applications, such ...
1236. 640 to-220 18A 200V N-Channel Enhancement Mode Power Mosfet [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT 640/I640/E640/B640/D640 F640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1237. 7A 800V N-Channel Enhancement Mode Power Mosfet 7n80 to-220 [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT 7N80/I7N80/E7N80 F7N80 Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
1238. Insulated Gate Bipolar Transistor IGBT G15n120d to-247 [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 30 A Collector Current (Tc=100ºC) 15 A Pulsed ...
1239. Single Item IGBT Module for Seamless Parallel and Series Integration [Nov 26, 2025]
[Nov 26, 2025] Product Description HCG100FS120E1B VcES=1200V,Ic (nom)=100A Features Low inductive design Low Vcesat with high junction temperature Fast &soft reverse recovery anti-parallel FWD Low Switching ...
1240. Advanced IGBT Module for Optimized Parallel and Series Applications [Nov 26, 2025]
[Nov 26, 2025] Product Description HCG100FS120E1B VcES=1200V,Ic (nom)=100A Features Low inductive design Low Vcesat with high junction temperature Fast &soft reverse recovery anti-parallel FWD Low Switching ...
1241. Reliable IGBT Module for Single Item Parallel and Series Installations [Nov 26, 2025]
[Nov 26, 2025] Product Description HCG100FS120E1B VcES=1200V,Ic (nom)=100A Features Low inductive design Low Vcesat with high junction temperature Fast &soft reverse recovery anti-parallel FWD Low Switching ...
1242. Durable IGBT Module for Parallel and Series Installation Needs [Nov 26, 2025]
[Nov 26, 2025] Product Description HCG100FS120E1B VcES=1200V,Ic (nom)=100A Features Low inductive design Low Vcesat with high junction temperature Fast &soft reverse recovery anti-parallel FWD Low Switching ...
1243. Robust IGBT Module for Versatile Parallel and Series Use [Nov 26, 2025]
[Nov 26, 2025] Product Description HCG100FS120E1B VcES=1200V,Ic (nom)=100A Features Low inductive design Low Vcesat with high junction temperature Fast &soft reverse recovery anti-parallel FWD Low Switching ...
1244. IGBT Module with Parallel and Series Installation Options Available [Nov 26, 2025]
[Nov 26, 2025] Product Description HCG100FS120E1B VcES=1200V,Ic (nom)=100A Features Low inductive design Low Vcesat with high junction temperature Fast &soft reverse recovery anti-parallel FWD Low Switching ...
1245. IGBT Module for Enhanced Performance in Parallel and Series Configurations [Nov 26, 2025]
[Nov 26, 2025] Product Description HCG100FS120E1B VcES=1200V,Ic (nom)=100A Features Low inductive design Low Vcesat with high junction temperature Fast &soft reverse recovery anti-parallel FWD Low Switching ...
