Jiangsu Profile
Product List
1801. 13A 500V N-Channel Enhancement Mode Power MOSFET F13N50 TO-220F 
[Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 13N50/I13N50/E13N50 F13N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
1802. 37A 650V N-Channel SiC Power MOSFET S37N65D TO-247 [Aug 09, 2026]
[Aug 09, 2026] Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives ...
1803. 100A 30V N-Channel Enhancement Mode Power MOSFET DHB100N03 TO-251B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH100N03/DHI100N03/DHE100N03/DHB100N03/DHD100N03 DHF100N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1804. 120A 55V N-Channel Enhancement Mode Power MOSFET DH3205T TO-220C [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 55 - 62 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 2 4 V EAS - - 2100 mJ Ptot - - 320 W Rdson 6.8 - 8.0 mΩ ...
1805. 10A 1200V SiC Schottky Barrier Diode DCD10D120G4 TO-252 [Aug 09, 2026]
[Aug 09, 2026] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1806. 120A 40V N-Channel Enhancement Mode Power MOSFET DH045N04D TO-252 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 44 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 1 2 V EAS - - 280 mJ Ptot - - 120 W Rdson 4.2 - 5.5 mΩ ...
1807. 150A 30V N-Channel Enhancement Mode Power MOSFET DH025N03E TO-252& DH025N03E TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH025N03/DHI025N03/DHE025N03/DHB025N03/DHD025N03 DHF025N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1808. 85A 68V N-Channel Enhancement Mode Power MOSFET DH065N07 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH065N07/DHI065N07/DHE065N07 DHB065N07/DHD065N07 DHF065N07 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±25 V Drain ...
1809. 8A 500V N-Channel Enhancement Mode Power MOSFET 8N50 TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 8N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...
1810. 10A 800V N-Channel Enhancement Mode Power MOSFET F10N80 TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 10N80/I10N80/E10N80 F10N80 Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
1811. 10A 400V N-Channel Enhancement Mode Power MOSFET F740 TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 740/I740/E740/B740/D740 F740 Drian-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1812. 17A 650V N-Channel Super Junction Power MOSFET DHFSJ17N65 TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ17N65/DHESJ17N65 DHFSJ17N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
1813. 60A 300V Fast Recovery Diode MUR6030NCA TO-3P [Aug 09, 2026]
[Aug 09, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1814. 40A 45V Schottky Barrier Diode MBR4045CT TO-263 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...
1815. 10A 400V Fast Recovery Diode MUR1040 TO-220 [Aug 09, 2026]
[Aug 09, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
