Jiangsu Profile
Product List
1876. High Quality Kp1300 Phased Rectification Kp Series-Ordinary Distributed Gate Inverter Ceramic ... 
[Apr 18, 2025]
[Apr 18, 2025] Product Description Phase Control Thyristor High-Temperature Resistance: This KP500a KP1000a KP2500a SCR Thyristor Module operates within a wide temperature range of -40°C to 150°C, ensuring reliability and ...
1877. Kp Ordinary Series Reliable Capsule Type Phase Distribute Gate Design Control Power Thyristor for ... [Apr 18, 2025]
[Apr 18, 2025] Product Description Phase Control Thyristor High-Temperature Resistance: This KP500a KP1000a KP2500a SCR Thyristor Module operates within a wide temperature range of -40°C to 150°C, ensuring reliability and ...
1878. 10A 400V SMD Super Fast Recovery Diode Mur1040 [Oct 26, 2022]
[Oct 26, 2022] Features Low cost Low leakage Low forward voltage drop High current capability Mechanical Data Case: TO-220AC Molding Compound: UL Flammability Classification Rating 94V-0 ...
1879. 500V/4A Half-Bridge Ipm Dpqb04hb50mfn Esop-9 [Aug 13, 2025]
[Aug 13, 2025] Specification Drain-Source Voltage 500V Continuous Drain Current TC = 25℃(Silicon limit) 4A Power Dissipation (TC = 25℃,Each MOSFET) 32.9 W Operating Junction Temperature -40~150℃ Packing & Delivery Company Profile ...
1880. 500V/3A Half-Bridge Ipm Dpqb03hb50mfn Esop-9 Without Internal Integrated Temperature Detection ... [Aug 12, 2025]
[Aug 12, 2025] Specification Drain-Source Voltage 500V Continuous Drain Current TC = 25℃(Silicon limit) 3A Power Dissipation (TC = 25℃,Each MOSFET) 24.5W Operating Junction Temperature -40~150℃ Packing & Delivery Company Profile ...
1881. Laser Micro-Etching Equipment [Jul 30, 2025]
[Jul 30, 2025] Product Description Product Features Ultra-fast laser processing system + F-T homogenization shaping technology, non-destructive ablation of various oxide films, passivation films and other materials Square spot size ...
1882. Hot Sale 105A 68V N-Channel Enhancement Mode Power Mosfet Dhs055n07 [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT DHF85N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 105 A (T=100ºC) 73.5 A Drain ...
1883. Hot Sale 20A 650V N-Channel Enhancement Mode Power Mosfet 20n65 to-220c [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT 20N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 0A (T=100ºC) 14 A Drain ...
1884. 100V 50A N-Mosfet Dsd190n10L3 [Jun 23, 2025]
[Jun 23, 2025] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1885. 10A 100V Schottky Barrier Diode Mbr10100CT to-220 & Mbrf10100CT to-220f [Jun 23, 2025]
[Jun 23, 2025] SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.79 max 0.85 IF(A) Single chip package 5 IF(A) Dual chip package 10 Features High junction temperature ...
1886. Hot Sale 238A 60V N-Channel Enhancement Mode Power Mosfet Dh026n06 [Jun 23, 2025]
[Jun 23, 2025] Parameter SYMBOL VALUE UNIT Drian-to-Source Voltage BVDSS 60 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain Current ID(TC=25ºC) 238 A ID(TC=100ºC) 167 A Pulsed Drain Current ...
1887. 20mΩ 650V N-Channel Sic Power Mosfet Dccf020m65g2 to-247-4L [Jun 23, 2025]
[Jun 23, 2025] 20mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1888. 100V/1.7mΩ /240A N-Mosfet Dse022n10n3 to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...
1889. Hot Sale 145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH045N06 DH045N06I/DH045N06E DH045N06B/DH045N06D DH045N0 6F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1890. 40V/0.85mΩ /200A N-Mosfet Dse012n04na to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...
