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120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88 to-220c
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1966.

120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

1700V/40MΩ /67A N-Channel Sic Mosfet Dcc040m170g2 to-247-3
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1967.

1700V/40MΩ /67A N-Channel Sic Mosfet Dcc040m170g2 to-247-3 Open Details in New Window [Feb 04, 2026]

68A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

1.2mm 1.5mm Thickness 12 Inches Dura420 SUS420J2 Stainless Steel Wafer Ring with High Flatness to ...
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1968.

1.2mm 1.5mm Thickness 12 Inches Dura420 SUS420J2 Stainless Steel Wafer Ring with High Flatness to ... Open Details in New Window [Jan 07, 2026]

1.2mm 1.5mm Thickness 12 inches Dura420 SUS420J2 Stainless Steel Wafer Ring with High Flatness to Engage in Folding Product Description Product Name 6" 8" 12" steel Metal Wafer Frame Ring For ...

Company: Jiangsu Xinyuanxing Metal Products Co., Ltd.

Hot Sale 100V/4.8mΩ /140A N-Mosfet DSG054n10n3 to-220c
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1969.

Hot Sale 100V/4.8mΩ /140A N-Mosfet DSG054n10n3 to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 140 A (T=100ºC) 99 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40mΩ 650V N-Channel Sic Power Mosfet Dccf040m65g2 to-247-4L
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1970.

40mΩ 650V N-Channel Sic Power Mosfet Dccf040m65g2 to-247-4L Open Details in New Window [Nov 08, 2025]

5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Oxide and Borated Dumet Lead Wire for Diode
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1971.

Oxide and Borated Dumet Lead Wire for Diode Open Details in New Window [Jun 27, 2025]

Dumet wire used as All kinds of light bulb Ni 41~43%, Fe Balance Dumet is a kind of permanent matching with soft glass sealing double metal alloy materials, has a good thermal expansion coefficient, mechanical ...

Company: Changzhou Capa New Materials Co., Ltd.

N-Channel Enhancement Mode Power Mosfet 7A 650V 7n65 to-220
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1972.

N-Channel Enhancement Mode Power Mosfet 7A 650V 7n65 to-220 Open Details in New Window [Jun 25, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 200V Fast Recovery Diode Mur80fu20dcs to-3pn
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1973.

80A 200V Fast Recovery Diode Mur80fu20dcs to-3pn Open Details in New Window [Jun 25, 2025]

Features Low forward voltage drop Glass Passivated Die Construction Low leakage current High reliability High forward surge current capability Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06e to-263
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1974.

130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06e to-263 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn
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1975.

60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current (TJ=100ºC) 60 A Pulsed Collector Current ICM 180 A Diode ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30b
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1976.

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH100P30B Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

250A 40V N-Channel Enhancement Mode Power Mosfet Dh019n04e to-263
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1977.

250A 40V N-Channel Enhancement Mode Power Mosfet Dh019n04e to-263 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH019N 04 DH019N04I DH019N04E DH019N04B DH019N04D DH019N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 600V Fast Recovery Diode Mur3060nct to-3pn
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1978.

30A 600V Fast Recovery Diode Mur3060nct to-3pn Open Details in New Window [Jun 25, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 300V Fast Recovery Diode Mur6030DCT to-3p
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1979.

60A 300V Fast Recovery Diode Mur6030DCT to-3p Open Details in New Window [Jun 25, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 300V Fast Recovery Diode Mur60g30nct to-3pn
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1980.

60A 300V Fast Recovery Diode Mur60g30nct to-3pn Open Details in New Window [Jun 25, 2025]

Features Low forward voltage drop Glass Passivated Die Construction Low leakage current High reliability High forward surge current capability Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd