Jiangsu Profile
Product List
1966. 25A 650V Sic Schottky Barrier Diode Dcet20d65g3 to-263-2 
[Jun 23, 2025]
[Jun 23, 2025] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1967. Hot Sale 25A 100V N-Channel Enhancement Mode Power Mosfet Dhs250n10d to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A (T=100ºC) 18 A Drain ...
1968. 180A 100V N-Channel Enhancement Mode Power Mosfet Dse026n10na to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) (Tc=25ºC) 8 A (Tc=100ºC) 5 A Drain ...
1969. 120A 80V N-Channel Enhancement Mode Power Mosfet Dse047n08n3 to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...
1970. High Quality Three-Phase SCR Tiristor Power Regulator Cabinet for Voltage Control AC Current Type [Apr 21, 2025]
[Apr 21, 2025] Product Description High-Quality Construction: Proudly presenting the POWERPASSION brand three-phase Automatic AC Power Controller, an epitome of superior craftsmanship and direct-from-factory assurance, guaranteeing ...
1971. China Manufacturing SMD dB107 dB107s 1A 1000V Diode Rectifier Bridge [Mar 30, 2022]
[Mar 30, 2022] Parameter Symbol DB101S DB102S DB1I03S DB104S D6105S DB1O6S DB107S unit Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS bridge input ...
1972. dB101s dB104s dB107s Bridge Rectifier 1A 50V~1000V Transistor [Jun 28, 2021]
[Jun 28, 2021] Specifications 1A Glass Passivated Bridge Rectifiers DB101(S)-DB107(S) Features: 1)We are professional diode manufacturer 2)High Quality,Competitive Price 3)Flexible business mode Product ...
1973. 120V/25mΩ /36A N-Mosfet Dse270n12n3 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 36 A (Tc=100ºC) 23 A Drain ...
1974. 8A 650V Sic Schottky Barrier Diode Sic0865 to-247-2L [Jun 23, 2025]
[Jun 23, 2025] 8A 650V SiC Schottky Barrier Diode SIC0865 to-247-2L 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high ...
1975. 62mm IGBT Module Dgb800h120L2t [Jun 23, 2025]
[Jun 23, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1976. 20A 400V Fast Recovery Diode Murf2040CT to-220f [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1977. 600A 1200V Half Bridge Module IGBT Module Dgd600h120L2t Econodual3 Package [Jun 23, 2025]
[Jun 23, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1978. High-Energy Ion Implanters Used in Integrated Circuits [Jul 30, 2025]
[Jul 30, 2025] Product Description Ion implantation technology has the following characteristics: single-sided collimation doping, good doping uniformity and controllability, singularity of doping elements, and it is very easy to ...
1979. 10A 1200V Sic Schottky Barrier Diode Dcgt10d120g4 to-220-2 [Jun 25, 2025]
[Jun 25, 2025] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1980. 650V 6A Sic Schottky Barrier Diode Dcgt06D65g4 to-220-2 [Jun 25, 2025]
[Jun 25, 2025] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
