Jiangsu Profile
Product List
2056. 9A 900V N-Channel Enhancement Mode Power MOSFET 9N90 TO-3PN 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 9N90 9N90 Maximum Drian-Source DC Voltage VDS 900 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
2057. 80A 300V Fast Recovery Diode MUR80FU30DCT TO-3P [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2058. 40A 600V Fast Recovery Diode MUR40FU60DCT TO-3PN [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 600 V Working Peak Reverse Voltage VRWM 600 V DC Blocking Voltage VR 600 V Average Rectified Forward ...
2059. 10.6A 650V N-Channel Super Junction Power MOSFET DJF380N65T TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ15N65//DHISJ15N65/DHESJ15N65 DHFSJ15N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2060. 180A 40V N-Channel Enhancement Mode Power MOSFET DHS021N04 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS021N04/DHS021N04E/DHS021N04B/DHS021N04D DHS021 N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2061. 19A 80V N-Channel Enhancement Mode Power MOSFET DH300N08 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH300N08 /DH300N08E DH300N08B/DH300N08D DH300 N08F Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2062. 18A 500V N-Channel Enhancement Mode Power MOSFET F18N50 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT F18N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 18 A (T=100ºC) 11 A Drain ...
2063. 140A 30V P-Channel Enhancement Mode Power MOSFET DH060P03D TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH060P 03F DH060P03/DH060P03E/ DH060P03B/DH060P03D Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2064. 21A 100V N-Channel Enhancement Mode Power MOSFET DHS400N10LB TO-251B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS400N10LD DHS400N10LB Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2065. 5A 600V N-Channel Enhancement Mode Power MOSFET F5N60 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT F5N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.6 A Drain ...
2066. 120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N88 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2067. 5A 500V N-Channel Enhancement Mode Power MOSFET D5N50 TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 500 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.1 A Drain ...
2068. 0.8A 600V N-Channel Enhancement Mode Power MOSFET B1N60 TO-251B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 1N60/I1N60/E1N60/B1N60/D1N60 F1N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
2069. 60A 30V N-Channel Enhancement Mode Power MOSFET DH081N03D TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 42 A Drain ...
2070. 120A 80V N-Channel Enhancement Mode Power MOSFET DSG047N08N3 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...
