Jiangsu Profile
Product List
2116. Hot Sale 25A 100V N-Channel Enhancement Mode Power Mosfet Dhs250n10d to-252b 
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A (T=100ºC) 18 A Drain ...
2117. 180A 100V N-Channel Enhancement Mode Power Mosfet Dse026n10na to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) (Tc=25ºC) 8 A (Tc=100ºC) 5 A Drain ...
2118. 120A 80V N-Channel Enhancement Mode Power Mosfet Dse047n08n3 to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...
2119. Hot Sale 80A 40V N-Channel Enhancement Mode Power Mosfet Dh045n04p [Sep 09, 2025]
[Sep 09, 2025] Features Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% ΔVDS test Applications Power switching applications Inverter ...
2120. Isolation Measurement Ultra-Sensitive Bipolar Hall IC Ah3051 Speed Sensing [Aug 25, 2025]
[Aug 25, 2025] Product Description Ultra-sensitive bipolar hall-effect switches These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, I. E., anorth-south alternating field, and they are ...
Company: Nanjing AH Electronic Science & Technology Co., Ltd.
2121. 8A 650V Sic Schottky Barrier Diode Sic0865 to-247-2L [Jun 23, 2025]
[Jun 23, 2025] 8A 650V SiC Schottky Barrier Diode SIC0865 to-247-2L 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high ...
2122. 62mm IGBT Module Dgb800h120L2t [Jun 23, 2025]
[Jun 23, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2123. 20A 400V Fast Recovery Diode Murf2040CT to-220f [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2124. 600A 1200V Half Bridge Module IGBT Module Dgd600h120L2t Econodual3 Package [Jun 23, 2025]
[Jun 23, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2125. Semiconductor Hall IC Ah3134 Unipolar Magnetic Sensor Hall Switch [Mar 18, 2025]
[Mar 18, 2025] Features High sensitivity digital output Stable over the entire temperature range Wide operating voltage range: 4.5V ~ 24V Strong resistance to mechanical stress Reverse power supply protection Non-contact ...
Company: Nanjing AH Electronic Science & Technology Co., Ltd.
2126. High Speed Switching Rectifier Diodes [Jan 11, 2025]
[Jan 11, 2025] Schottky diode is precious metals (gold, silver, aluminum, platinum, etc.) A is positive, with N type semiconductor B as anode, using the contact surface forming A barrier rectifier features and made of metal - ...
2127. Kbpc3510 Kbpc2510 Bridge Rectifiers Kbpc3005 [Apr 10, 2023]
[Apr 10, 2023] FAQ: 1, Are you Manufacturer or trading company? We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price and fast delivery and good quality with ...
2128. 1700V/40mΩ /67A N-Channel Sic Mosfet Dcc040m170g2 to-247-3 [Nov 08, 2025]
[Nov 08, 2025] 68A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...
2129. 10A 1200V Sic Schottky Barrier Diode Dcgt10d120g4 to-220-2 [Jun 25, 2025]
[Jun 25, 2025] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2130. 650V 6A Sic Schottky Barrier Diode Dcgt06D65g4 to-220-2 [Jun 25, 2025]
[Jun 25, 2025] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
