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120A 100V N-Channel Enhancement Mode Power MOSFET DHE10H037R TO-263
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2086.

120A 100V N-Channel Enhancement Mode Power MOSFET DHE10H037R TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHF10H 037R DH10H037R/ DHE10H037R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 80V N-Channel Enhancement Mode Power MOSFET DSE047N08N3 TO-263
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2087.

120A 80V N-Channel Enhancement Mode Power MOSFET DSE047N08N3 TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 40V N-Channel Enhancement Mode Power MOSFET DH025N04E TO-263
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2088.

130A 40V N-Channel Enhancement Mode Power MOSFET DH025N04E TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH025N04 /DH025N04E DH025N04B/DH025N04D DH025N0 4F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 200V Fast Recovery Diode MUR80FU20DCS TO-3PN
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2089.

80A 200V Fast Recovery Diode MUR80FU20DCS TO-3PN Open Details in New Window [Aug 09, 2026]

Features Low forward voltage drop Glass Passivated Die Construction Low leakage current High reliability High forward surge current capability Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 100V N-Channel Enhancement Mode Power MOSFET DH10H037R TO-220
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2090.

120A 100V N-Channel Enhancement Mode Power MOSFET DH10H037R TO-220 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH10H037R/DHI10H037R/DHE10H037R DHF10H037R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

13A 900V N-Channel Enhancement Mode Power MOSFET 13N90 TO-3PN
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2091.

13A 900V N-Channel Enhancement Mode Power MOSFET 13N90 TO-3PN Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT 13N90 Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 13 0A (T=100ºC) 6.5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 68V N-Channel Enhancement Mode Power MOSFET DH072N07 TO-220
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2092.

80A 68V N-Channel Enhancement Mode Power MOSFET DH072N07 TO-220 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH072N07/DH072N07I/DH072N07E/ DH072N07B/DH072N07D DH072N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 400V Fast Recovery Diode MUR3040NCS TO-3PN
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2093.

30A 400V Fast Recovery Diode MUR3040NCS TO-3PN Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

90A 400V Fast Recovery Diode MUR9040DCT TO-3P
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2094.

90A 400V Fast Recovery Diode MUR9040DCT TO-3P Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 100V N-Channel Enhancement Mode Power MOSFET DHS065N10E TO-263
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2095.

100A 100V N-Channel Enhancement Mode Power MOSFET DHS065N10E TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS065N10/ DHS065N10E/ DHS065N10B/ DHS065N10D DHS06 5N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

1.0A 5V Positive Voltage Regulator IC 78M05A TO-252B
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2096.

1.0A 5V Positive Voltage Regulator IC 78M05A TO-252B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT DC Intput Voltage VI 35 V Output Current IO 1.0 V Thermal resistance junction-air RθJA 87 ºC/W Thermal resistance ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 200V Fast Recovery Diode MUR1620CT TO-220
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2097.

16A 200V Fast Recovery Diode MUR1620CT TO-220 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 80V N-Channel Enhancement Mode Power MOSFET DHE8004 TO-263
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2098.

180A 80V N-Channel Enhancement Mode Power MOSFET DHE8004 TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH8004 /DHE8004 DH8004D DH8004B Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

36A 1200V N-Channel SiC Power MOSFET DHC1M080120D TO-3P
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2099.

36A 1200V N-Channel SiC Power MOSFET DHC1M080120D TO-3P Open Details in New Window [Aug 09, 2026]

36A1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

160A 90V N-Channel Enhancement Mode Power MOSFET DH90N035R TO-220
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2100.

160A 90V N-Channel Enhancement Mode Power MOSFET DH90N035R TO-220 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH90N035R/DHI90N035R/DHE90N035R DHF90N035R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd