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100V/5.6mΩ /103A N-Mosfet Dse065n10L3a to-263
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2086.

100V/5.6mΩ /103A N-Mosfet Dse065n10L3a to-263 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 103 A (T=100ºC) 73 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

IC Dh7107gp 3¹ /2 Digit a/D Converters
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2087.

IC Dh7107gp 3¹ /2 Digit a/D Converters Open Details in New Window [Nov 08, 2025]

The DH7107 are high performance, low power, 31/2 digit A/D converters. Included are seven segment decoders, display drivers, a reference, and a clock. The DH7107 will directly drive an instrument size light emitting ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/2.2mΩ /180A N-Mosfet Dse026n10n3a to-263
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2088.

100V/2.2mΩ /180A N-Mosfet Dse026n10n3a to-263 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 170 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30mΩ 1200V N-Channel Sic Power Mosfet Dcc030m120g2 to-247-3L
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2089.

30mΩ 1200V N-Channel Sic Power Mosfet Dcc030m120g2 to-247-3L Open Details in New Window [Nov 08, 2025]

Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives Switch Mode ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Oxide and Borated Dumet Lead Wire for Diode
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2090.

Oxide and Borated Dumet Lead Wire for Diode Open Details in New Window [Jun 27, 2025]

Dumet wire used as All kinds of light bulb Ni 41~43%, Fe Balance Dumet is a kind of permanent matching with soft glass sealing double metal alloy materials, has a good thermal expansion coefficient, mechanical ...

Company: Changzhou Capa New Materials Co., Ltd.

N-Channel Enhancement Mode Power Mosfet 7A 650V 7n65 to-220
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2091.

N-Channel Enhancement Mode Power Mosfet 7A 650V 7n65 to-220 Open Details in New Window [Jun 25, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 200V Fast Recovery Diode Mur80fu20dcs to-3pn
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2092.

80A 200V Fast Recovery Diode Mur80fu20dcs to-3pn Open Details in New Window [Jun 25, 2025]

Features Low forward voltage drop Glass Passivated Die Construction Low leakage current High reliability High forward surge current capability Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06e to-263
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2093.

130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06e to-263 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn
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2094.

60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current (TJ=100ºC) 60 A Pulsed Collector Current ICM 180 A Diode ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30b
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2095.

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH100P30B Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

250A 40V N-Channel Enhancement Mode Power Mosfet Dh019n04e to-263
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2096.

250A 40V N-Channel Enhancement Mode Power Mosfet Dh019n04e to-263 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH019N 04 DH019N04I DH019N04E DH019N04B DH019N04D DH019N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 600V Fast Recovery Diode Mur3060nct to-3pn
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2097.

30A 600V Fast Recovery Diode Mur3060nct to-3pn Open Details in New Window [Jun 25, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 300V Fast Recovery Diode Mur6030DCT to-3p
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2098.

60A 300V Fast Recovery Diode Mur6030DCT to-3p Open Details in New Window [Jun 25, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 300V Fast Recovery Diode Mur60g30nct to-3pn
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2099.

60A 300V Fast Recovery Diode Mur60g30nct to-3pn Open Details in New Window [Jun 25, 2025]

Features Low forward voltage drop Glass Passivated Die Construction Low leakage current High reliability High forward surge current capability Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 600V Fast Recovery Diode Mur2060A to-220-2L
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2100.

20A 600V Fast Recovery Diode Mur2060A to-220-2L Open Details in New Window [Jun 25, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd