Jiangsu Profile
Product List
2131. 1200V 36A N-Channel Sic Power Mosfet Dhc1m080120d to-3p 
[Jun 23, 2025]
[Jun 23, 2025] 36A1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
2132. 115A 1200V N-Channel Sic Power Mosfet Dhc2m016120q to-247-4 [Jun 23, 2025]
[Jun 23, 2025] 115A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
2133. Semiconductor Hall IC Ah3134 Unipolar Magnetic Sensor Hall Switch [Mar 18, 2025]
[Mar 18, 2025] Features High sensitivity digital output Stable over the entire temperature range Wide operating voltage range: 4.5V ~ 24V Strong resistance to mechanical stress Reverse power supply protection Non-contact ...
Company: Nanjing AH Electronic Science & Technology Co., Ltd.
2134. 35V/0.58mΩ /355A N-Mosfet DSP007n03la Dfn5X6 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 35 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 355 A (T=100ºC) 251 A Drain ...
2135. 100V/1.8mΩ /272A N-Mosfet Dsu024n10n3a Toll Package [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 272 A (T=100ºC) 192 A Drain ...
2136. 100V/1.15mΩ /373A N-Mosfet Dsu014n10n3a Toll Package [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 458 A (T=100ºC) 324 A Drain ...
2137. 80V/3.4mΩ /100A N-Mosfet DSP037n08n3 Dfn5X6 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 84 A Drain ...
2138. 500V/4A Half-Bridge Ipm Dpqb04hb50mfn Esop-9 [Aug 13, 2025]
[Aug 13, 2025] Specification Drain-Source Voltage 500V Continuous Drain Current TC = 25℃(Silicon limit) 4A Power Dissipation (TC = 25℃,Each MOSFET) 32.9 W Operating Junction Temperature -40~150℃ Packing & Delivery Company Profile ...
2139. 500V/3A Half-Bridge Ipm Dpqb03hb50mfn Esop-9 Without Internal Integrated Temperature Detection ... [Aug 12, 2025]
[Aug 12, 2025] Specification Drain-Source Voltage 500V Continuous Drain Current TC = 25℃(Silicon limit) 3A Power Dissipation (TC = 25℃,Each MOSFET) 24.5W Operating Junction Temperature -40~150℃ Packing & Delivery Company Profile ...
2140. Hot Sale 20A 650V N-Channel Enhancement Mode Power Mosfet F20n65 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT F20N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 0A (T=100ºC) 12.5 A Drain ...
2141. 20A 650V Sic Schottky Barrier Diode Dcct20d65g4 to-247-2 [Jun 25, 2025]
[Jun 25, 2025] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2142. Hot Sale 8A 650V N-Channel Enhancement Mode Power Mosfet F8n65 to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT F8N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...
2143. Hot Sale 15A 600V Fast Recovery Diode Mur1560 to-220-2L [Jun 25, 2025]
[Jun 25, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2144. 10A 600V Fast Recovery Diode Murd1060CT to-252 [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2145. 8A 600V Fast Recovery Diode Mur860 to-220-2L [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
