Jiangsu Profile
Product List
2191. 68A 100V N-Channel Enhancement Mode Power Mosfet Dh140n10d to-252b 
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH140N10D Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 68 A (T=100ºC) 48 A Drain ...
2192. 1200V 5A Sic Schottky Barrier Diode Dcgt05D120g3 to-220-2 [Jun 23, 2025]
[Jun 23, 2025] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2193. 650V 20A Sic Schottky Barrier Diode Dcgt20d65g4 to-220-2L [Jun 23, 2025]
[Jun 23, 2025] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2194. Hot Sale 100A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06D to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH066N06D Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 63 A Drain ...
2195. 47A 100V N-Channel Enhancement Mode Power Mosfet Dhs180n10lb to-251b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS180N10LB Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 47 A (T=100ºC) 33 A Drain ...
2196. 10A 650V Sic Schottky Barrier Diode Dcgt10d65g4 to-220-2 [Jun 23, 2025]
[Jun 23, 2025] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2197. 130A 40V N-Channel Enhancement Mode Power Mosfet Dh025n04D to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH025N04 /DH025N04E DH025N04B/DH025N04D DH025N0 4F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2198. Hot Sale 25A 110V N-Channel Enhancement Mode Power Mosfet Dhs250n11d to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 110 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A (T=100ºC) 18 A Drain ...
2199. 65A 1200V N-Channel Sic Power Mosfet Dcev040m120A2 to-263-7 [Jun 23, 2025]
[Jun 23, 2025] Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives Switch Mode ...
2200. 65A 1200V N-Channel Sic Power Mosfet Dcev040m120A2 to-263-7 [Jun 23, 2025]
[Jun 23, 2025] Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives Switch Mode ...
2201. 650V 8A Sic Schottky Barrier Diode Dcgt08d65g4 to-220-2 [Jun 23, 2025]
[Jun 23, 2025] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2202. 85V/0.9mΩ /360A N-Mosfet Dsu011n08n3a [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 433 A (T=100ºC) 360 A Drain ...
2203. 135V/3.3mΩ /225A N-Mosfet Dsu035n14n3 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 225 A (Tc=100ºC) 159 A Drain ...
2204. 1700V/80mΩ /37A N-Channel Sic Mosfet Dcc080m170g2 to-247-3 [Nov 08, 2025]
[Nov 08, 2025] 68A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...
2205. Isolation Measurement Ultra-Sensitive Bipolar Hall IC Ah3051 Speed Sensing [Aug 25, 2025]
[Aug 25, 2025] Product Description Ultra-sensitive bipolar hall-effect switches These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, I. E., anorth-south alternating field, and they are ...
Company: Nanjing AH Electronic Science & Technology Co., Ltd.
