Jiangsu Profile
Product List
2191. 40A 100V Schottkybarrierdiode Mbrf40100CT to-220f 
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 100 V RMS Reverse Voltage VR(RMS) 80 V DC Blocking Voltage VR 100 V Average Rectified Forward Current IF(AV) 20 A Repetitive ...
2192. 210A 60V N-Channel Enhancement Mode Power Mosfet Dhe027n06 to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH027N06/DHI027N06/DHE027N06/DH027N06D/DH027N06B DHF027N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain ...
2193. 60A 100V N-Channel Enhancement Mode Power Mosfet Dh0159 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH0159/DHE015 9/DHB0159/DHD0159 DHF0159 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2194. 8A 800V N-Channel Super Junction Power Mosfet Djg660n80e to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5.1 A Drain ...
2195. 40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc40f65m2 to-247 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
2196. 81A 80V N-Channel Enhancement Mode Power Mosfet Dh060n08 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH060N08 /DH060N08B DH060N08D/ DH060N08E DH060N08F Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2197. 210A 60V N-Channel Enhancement Mode Power Mosfet Dh027n06 to-220c [Jun 23, 2025]
[Jun 23, 2025] Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features Low on ...
2198. 80A 400V Fast Recovery Diode Mur80fu40nct to-3pn [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2199. 120A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06D to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 107 A Drain ...
2200. 180A 135V N-Channel Enhancement Mode Power Mosfet DSG045n14n to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
2201. 4A 650V Sic Schottky Barrier Diode Dcgt04D65g4 to-220-2L [Jun 23, 2025]
[Jun 23, 2025] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2202. 40A 60V Low Vf Schottkybarrierdiode Mbr40r60CT to-220c [Jun 23, 2025]
[Jun 23, 2025] SYMBOL RATING VBR (V) Min 60 typ 72 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.71 max 0.80 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...
2203. 85A 150V N-Channel Enhancement Mode Power Mosfet Dhs110n15D [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 85 A (T=100ºC) 60 A Drain ...
2204. 4.8A 650V N-Channel Super Junction Power Mosfet Dhdsj5n65 to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 4.8 A (T=100ºC) 3.0 A Drain ...
2205. 30A 200V Schottky Barrier Diode Mbrf30200CT to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V RMS Reverse Voltage VR(RMS) 160 V DC Blocking Voltage VR 200 V Average Rectified Forward Current TC=120ºC ...
