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180A 80V N-Channel Enhancement Mode Power MOSFET DHE8004 TO-263
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2281.

180A 80V N-Channel Enhancement Mode Power MOSFET DHE8004 TO-263 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH8004 /DHE8004 DH8004D DH8004B Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 600V Fast Recovery Diode MUR3060NCT TO-3PN
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2282.

30A 600V Fast Recovery Diode MUR3060NCT TO-3PN Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

200A 30V N-Channel Enhancement Mode Power MOSFET DH020N03E TO-263
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2283.

200A 30V N-Channel Enhancement Mode Power MOSFET DH020N03E TO-263 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH020N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 200 A (T=100ºC) 140 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

160A 120V N-Channel Enhancement Mode Power MOSFET DHS044N12E TO-263
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2284.

160A 120V N-Channel Enhancement Mode Power MOSFET DHS044N12E TO-263 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 180 (Tc=100ºC) 114 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 100V P-Channel Enhancement Mode Power MOSFET DH100P20E TO-263
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2285.

20A 100V P-Channel Enhancement Mode Power MOSFET DH100P20E TO-263 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH100P20/DH100P20I/DH100P20E/DH100P20B/DH100P20D DH100P20F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGN30F65M2 TO-3PN
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2286.

30A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGN30F65M2 TO-3PN Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 98V N-Channel Enhancement Mode Power MOSFET DHS046N10E TO-263
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2287.

120A 98V N-Channel Enhancement Mode Power MOSFET DHS046N10E TO-263 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DHS04 6N10/DHS04 6N10E /DHS046N10B/DHS046N10D DHS04 6N10F Drian-to-Source Voltage VDSS 98 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 45V Schottky Barrier Diode MBR6045NCT TO-3PN
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2288.

60A 45V Schottky Barrier Diode MBR6045NCT TO-3PN Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 45 V RMS Reverse Voltage VR(RMS) 45 V DC Blocking Voltage VR 45 V Average Rectified Forward Current IF(AV) 60 A Repetitive ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 650V SiC Schottky Barrier Diode DCE08D65G4 TO-263
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2289.

8A 650V SiC Schottky Barrier Diode DCE08D65G4 TO-263 Open Details in New Window [Jul 21, 2026]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 1200V SiC Schottky Barrier Diode DCGT15D120G4 TO-220
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2290.

15A 1200V SiC Schottky Barrier Diode DCGT15D120G4 TO-220 Open Details in New Window [Jul 21, 2026]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 100V N-Channel Enhancement Mode Power MOSFET DH10H037R TO-220
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2291.

120A 100V N-Channel Enhancement Mode Power MOSFET DH10H037R TO-220 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH10H037R/DHI10H037R/DHE10H037R DHF10H037R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

160A 90V N-Channel Enhancement Mode Power MOSFET DH90N035R TO-220
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2292.

160A 90V N-Channel Enhancement Mode Power MOSFET DH90N035R TO-220 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH90N035R/DHI90N035R/DHE90N035R DHF90N035R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 68V N-Channel Enhancement Mode Power MOSFET DH105N07B TO-251
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2293.

60A 68V N-Channel Enhancement Mode Power MOSFET DH105N07B TO-251 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH105N07/DH105N07I/DH105N07EDH105N07B/DH105N07D DH105N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 68V N-Channel Enhancement Mode Power MOSFET DH072N07 TO-220
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2294.

80A 68V N-Channel Enhancement Mode Power MOSFET DH072N07 TO-220 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH072N07/DH072N07I/DH072N07E/ DH072N07B/DH072N07D DH072N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N85 TO-220C
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2295.

120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N85 TO-220C Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DHS045N85 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 76 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd