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70A 60V N-Channel Enhancement Mode Power MOSFET DATP057N06N DFN5X6
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2281.

70A 60V N-Channel Enhancement Mode Power MOSFET DATP057N06N DFN5X6 Open Details in New Window [Aug 13, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 50 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 85V N-Channel Enhancement Mode Power MOSFET DSG048N08N3 TO-220C
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2282.

120A 85V N-Channel Enhancement Mode Power MOSFET DSG048N08N3 TO-220C Open Details in New Window [Aug 13, 2026]

PARAMETER SYMBOL VALUE UNIT DSG048N08N3 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 84 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40H120M2 TO-247
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2283.

40A 1200V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40H120M2 TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 650V SiC Schottky Barrier Diode DCC40D65G4 TO-247
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2284.

40A 650V SiC Schottky Barrier Diode DCC40D65G4 TO-247 Open Details in New Window [Aug 09, 2026]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

64A 60V N-Channel Enhancement Mode Power MOSFET DHS095N06P DFN5X6
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2285.

64A 60V N-Channel Enhancement Mode Power MOSFET DHS095N06P DFN5X6 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 52 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

140A 60V P-Channel Enhancement Mode Power MOSFET DTG050P06LA TO-220C
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2286.

140A 60V P-Channel Enhancement Mode Power MOSFET DTG050P06LA TO-220C Open Details in New Window [Aug 09, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS -60 - -70 V ID (T=25ºC) - - -140 A BVGSS ±20 V VTH -1 -3 V EAS - - 1369 mJ Ptot - - 2.5 W Rdson 14 - 5.8 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 650V N-Channel Enhancement Mode Power MOSFET F10N65 TO-220F
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2287.

10A 650V N-Channel Enhancement Mode Power MOSFET F10N65 TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT F10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 10 0A (T=100ºC) 6.3 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 400V Fast Recovery Diode MUR40FU40CT TO-220F
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2288.

40A 400V Fast Recovery Diode MUR40FU40CT TO-220F Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 60V N-Channel Enhancement Mode Power MOSFET DH066N06P DFN5X6
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2289.

70A 60V N-Channel Enhancement Mode Power MOSFET DH066N06P DFN5X6 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH066N06P Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 50 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 200V Schottky Barrier Diode MBRF30200CT TO-220F
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2290.

30A 200V Schottky Barrier Diode MBRF30200CT TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V RMS Reverse Voltage VR(RMS) 160 V DC Blocking Voltage VR 200 V Average Rectified Forward Current TC=120ºC ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

95A 100V N-Channel Enhancement Mode Power MOSFET DSP070N10L3A DFN5X6
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2291.

95A 100V N-Channel Enhancement Mode Power MOSFET DSP070N10L3A DFN5X6 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 95 A (T=100ºC) 67 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 60V Schottky Barrier Diode MBR40R60CT TO-220C
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2292.

40A 60V Schottky Barrier Diode MBR40R60CT TO-220C Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 60 typ 72 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.71 max 0.80 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 650V SiC Schottky Barrier Diode DCGT10D65G4 TO-220
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2293.

10A 650V SiC Schottky Barrier Diode DCGT10D65G4 TO-220 Open Details in New Window [Aug 09, 2026]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

81A 80V N-Channel Enhancement Mode Power MOSFET DH060N08 TO-220C
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2294.

81A 80V N-Channel Enhancement Mode Power MOSFET DH060N08 TO-220C Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH060N08 /DH060N08B DH060N08D/ DH060N08E DH060N08F Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

47A 100V N-Channel Enhancement Mode Power MOSFET DHS180N10LF TO-220F
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2295.

47A 100V N-Channel Enhancement Mode Power MOSFET DHS180N10LF TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 47 A (T=100ºC) 33 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd