Jiangsu Profile
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Product List
2311. 18A 100V P-Channel Enhancement Mode Power MOSFET DH100P18D TO-252 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH100P18/DH100P18I/DH100P18E/DH100P18B/DH100P18D DH100P18F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±30 V Drain ...
2312. 88A 60V N-Channel Enhancement Mode Power MOSFET DH070N06 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH070N06/DHI070N06/DHE070N06/ DHB070N06/DHD070N06 DHF070N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2313. 50A 150V N-Channel Enhancement Mode Power MOSFET DH50N15 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH50N15/DHI50N15/DHE50N15 DHF50N15 Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2314. 15A 60V N-Channel Enhancement Mode Power MOSFET DHZ24 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHZ24/DHIZ24/DHEZ24/DHBZ24/DHDZ24 DHFZ24 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2315. 130A 100V N-Channel Enhancement Mode Power MOSFET DHS037N10 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS037N10 DHS037N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2316. RC Absorption/Snubber Circuit Module Relay Contact Protection Resistance Surge [May 19, 2026]
[May 19, 2026] Product Description Description: RC absorption circuit is also called RC Snubber circuit. It is a circuit structure in which resistors and capacitors are connected in series and connected in parallel with switching ...
2317. Triple Output Industrial Capacitor Switch 3500A for Reliable Power Management [Mar 30, 2026]
[Mar 30, 2026] Product Description High Power Rating: Boasting an impressive power capacity of 1000A, this state-of-the-art power supply switch is engineered for high-demand applications. It offers unparalleled reliability and ...
2318. Factory Direct SCR Thyristor Semiconductor Module Standard Mounting Type for Optimal Efficiency [Mar 30, 2026]
[Mar 30, 2026] Product Description Factory Direct Pricing: As a distinguished direct manufacturer, Zhenjiang Zhendi Electric Technology Co., Ltd proudly offers you factory direct pricing, cutting out the middleman to provide you with ...
2319. Durable Mhk300A SCR Module for Induction Heating Solutions [Mar 30, 2026]
[Mar 30, 2026] Product Description Thyristor Module High-Quality Construction: This SCR power control module is designed with high-quality components, ensuring reliable performance and durability in demanding applications, such ...
2320. Semiconductor Equipment Accessories 716-057993-213 Gas Injector [Jun 30, 2026]
[Jun 30, 2026] Product Description 0040-55456 0200-00771 0200-05590 BELL JAR SHADOWRING DOME,TOP FEED IPM,300MM Introduction to Main Ceramic Products BELL JAR //0040-55456 The internal kit applicable to the AMAT Endura2 Pre-clean ...
2321. 30A 1200V Fast Recovery Diode MUR30120 TO-220 [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2322. 15A 120V Insulated Gate Bipolar Transistor IGBT G15N120D TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 30 A Collector Current (Tc=100ºC) 15 A Pulsed ...
2323. 60A 100V N-Channel Enhancement Mode Power MOSFET DSD150N10L3 TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
2324. 120A 40V N-Channel Enhancement Mode Power MOSFET DHS021N04B TO-251 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 120 A Drain ...
2325. 30A 200V Schottky Barrier Diode MBRF30200CT TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V RMS Reverse Voltage VR(RMS) 160 V DC Blocking Voltage VR 200 V Average Rectified Forward Current TC=120ºC ...
