Jiangsu Profile
Product List
2341. 80A 200V Fast Recovery Diode MUR80FU20NCA TO-247 
[Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2342. 5A 650V N-Channel Enhancement Mode Power MOSFET 5N65C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 5N65C Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.1 A Drain ...
2343. 10A 100V Schottky Barrier Diode MBR10100CT TO-220M [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 100 V RMS Reverse Voltage VR(RMS) 80 V DC Blocking Voltage VR 100 V Average Rectified Forward Current IF(AV) 5 A Repetitive ...
2344. 150A 150V N-Channel Enhancement Mode Power MOSFET DSG059N15NA TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 106 A Drain ...
2345. 140A 30V P-Channel Enhancement Mode Power MOSFET DH060P03 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH060P 03F DH060P03/DH060P03E/ DH060P03B/DH060P03D Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2346. 20A 650V SiC Schottky Barrier Diode DCC20D65G4 TO-247 [Jul 21, 2026]
[Jul 21, 2026] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2347. 40A 60V Schottky Barrier Diode MBR40R60CT TO-220C [Jul 21, 2026]
[Jul 21, 2026] SYMBOL RATING VBR (V) Min 60 typ 72 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.71 max 0.80 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...
2348. 120A 40V N-Channel Enhancement Mode Power MOSFET DTG032N04N TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 117 A Drain ...
2349. 15A 40V P-Channel Enhancement Mode Power MOSFET AOD413 TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDSS -40 V Maximum Gate-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -15 A (T=100ºC) -12 A Drain ...
2350. 80A 300V Fast Recovery Diode MUR80FU30BCT TO-247 [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2351. 7A 650V N-Channel Enhancement Mode Power MOSFET D7N65 TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 7N65/I7N65/E7N65/B7N65/D7N65 F7N65 Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
2352. 60A 60V P-Channel Enhancement Mode Power MOSFET DH150P06F TO-220F [Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS -60 - -70 V ID (T=25ºC) - - -60 A BVGSS ±20 V VTH -1 -3 V EAS - - 506 mJ Ptot - - 30 W Rdson 14 - 720 mΩ ...
2353. 30A 45V Schottky Barrier Diode MBR3045CT TO-263 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 15 IF(A) Dual chip package 30 Features High junction temperature ...
2354. 16A 100V Schottky Barrier Diode MBR16100CT TO-220 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.79 max 0.85 IF(A) Single chip package 8 IF(A) Dual chip package 16 Features High junction temperature ...
2355. 80A 400V Fast Recovery Diode MUR80FU40DCT TO-3P [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
