Jiangsu Profile
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Product List
2341. 120A 40V N-Channel Enhancement Mode Power MOSFET D120N04 TO-252 
[Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 45 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 0.8 2 V EAS - - 960 mJ Ptot - - 120 W Rdson 3.3 - 4.5 mΩ ...
2342. 20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...
2343. 96A 100V N-Channel Enhancement Mode Power MOSFET DSP051N10N DFN5X6 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 96 A (T=100ºC) 67 A Drain ...
2344. 60A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC60F65M TO-247 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
2345. 10A 1200V SiC Schottky Barrier Diode DCGT10D120G4 TO-220 [Aug 09, 2026]
[Aug 09, 2026] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2346. 130A 80V N-Channel Enhancement Mode Power MOSFET DH050N85 TO-220 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 85 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 1156 mJ Ptot - - 300 W Rdson - 5 6 mΩ Features Fast ...
2347. 30A 100V Schottky Barrier Diode MBR30R100CT TO-220 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.68 max 0.73 IF(A) Single chip package 15.0 IF(A) Dual chip package 30.0 Features High junction temperature ...
2348. 50A 120V N-Channel Enhancement Mode Power MOSFET DH150N12 TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH150N12 / DH150N12E DH150N12B / DH150N12D DH150N 12F Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2349. 20A 650V SiC Schottky Barrier Diode DCC20D65G4 TO-247 [Aug 09, 2026]
[Aug 09, 2026] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2350. 8A 650V SiC Schottky Barrier Diode DCGT08D65G4 TO-220 [Aug 09, 2026]
[Aug 09, 2026] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2351. 20A 45V Schottky Barrier Diode MBR20R45CT TO-220C [Aug 09, 2026]
[Aug 09, 2026] SYMBOL RATING VBR (V) Min 45 typ 53 IR(uA)25ºC max 100 VF (V) 25ºC typ. 0.42 max 0.50 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...
2352. 6A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGD06F65M2 TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 12 A Collector Current (Tc=100ºC) 6 A Pulsed ...
2353. 60A 20V N-Channel Enhancement Mode Power MOSFET DH048N02D TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH048N02B/DH048N02D Drian-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±12 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 42 A Drain ...
2354. 20A 80V Schottky Barrier Diode MBR20R80CT TO-220 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL RATING VBR (V) Min 80 typ.90 IR(uA)25ºC max 100 VF (V) 25ºC typ. 0.58 max 0.7 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...
2355. 10A 800V Fast Recovery Diode MURF1080 TO-220F [Aug 09, 2026]
[Aug 09, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
