Jiangsu Profile
Product List
2371. 10A 650V N-Channel Enhancement Mode Power MOSFET F10N65 TO-220F 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT F10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 10 0A (T=100ºC) 6.3 A Drain ...
2372. 180A 40V N-Channel Enhancement Mode Power MOSFET DSG019N04L TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 261 A (T=100ºC) 180 A Drain ...
2373. 170A 100V N-Channel Enhancement Mode Power MOSFET DSG030N10N3 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 134 A Drain ...
2374. 85A 60V P-Channel Enhancement Mode Power MOSFET DTD125P06LA TO-252 [Jul 21, 2026]
[Jul 21, 2026] Features High density cell design for ultra low Rdson 175°C operating temperature Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for ...
2375. 8A 800V N-Channel Super Junction Power MOSFET DJG660N80E TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5.1 A Drain ...
2376. 4.8A 650V N-Channel Super Junction Power MOSFET DHBSJ5N65 TO-251B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 4.8 A (T=100ºC) 3.0 A Drain ...
2377. 140A 150V N-Channel Enhancement Mode Power MOSFET DSG070N15NA TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 140 A (T=100ºC) 99 A Drain ...
2378. 150A 30V N-Channel Enhancement Mode Power MOSFET DTG023N03L TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 95 A Drain ...
2379. 180A 135V N-Channel Enhancement Mode Power MOSFET DSG045N14N TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
2380. 70A 650V N-Channel Super Junction Power MOSFET DJC070N65M2 TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...
2381. 20A 80V Schottky Barrier Diode MBR20R80CT TO-220 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL RATING VBR (V) Min 80 typ.90 IR(uA)25ºC max 100 VF (V) 25ºC typ. 0.58 max 0.7 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...
2382. 120A 40V N-Channel Enhancement Mode Power MOSFET D120N04 TO-252 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 45 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 0.8 2 V EAS - - 960 mJ Ptot - - 120 W Rdson 3.3 - 4.5 mΩ ...
2383. 30A 100V Schottky Barrier Diode MBR30R100CT TO-220 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.68 max 0.73 IF(A) Single chip package 15.0 IF(A) Dual chip package 30.0 Features High junction temperature ...
2384. 20A 45V Schottky Barrier Diode MBR20R45CT TO-220C [Jul 21, 2026]
[Jul 21, 2026] SYMBOL RATING VBR (V) Min 45 typ 53 IR(uA)25ºC max 100 VF (V) 25ºC typ. 0.42 max 0.50 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...
2385. 85A 80V N-Channel Enhancement Mode Power MOSFET DH075N08D TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 85 A (T=100ºC) 60 A Drain ...
