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15A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DHG15T65DLBBF TO-220
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2371.

15A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DHG15T65DLBBF TO-220 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current (TJ=100ºC) 15 A Pulsed Collector Current ICM 60 A Diode Continuous ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 1200V N-Channel SiC Power MOSFET DHC1M040120W TO-247
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2372.

60A 1200V N-Channel SiC Power MOSFET DHC1M040120W TO-247 Open Details in New Window [Aug 09, 2026]

60A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

176A 68V N-Channel Enhancement Mode Power MOSFET DHS031N07P DFN5X6-8L
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2373.

176A 68V N-Channel Enhancement Mode Power MOSFET DHS031N07P DFN5X6-8L Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 176 A (T=100ºC) 123 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

65A 60V N-Channel Enhancement Mode Power MOSFET DH065N06 TO-220
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2374.

65A 60V N-Channel Enhancement Mode Power MOSFET DH065N06 TO-220 Open Details in New Window [Aug 09, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 625 mJ Ptot - - 200 W Rdson 5.0 - 6.5 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 100V N-Channel Enhancement Mode Power MOSFET DH180N10 TO-220
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2375.

180A 100V N-Channel Enhancement Mode Power MOSFET DH180N10 TO-220 Open Details in New Window [Aug 09, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 109 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1760 mJ Ptot - - 346 W Rdson 4.3 - 5.5 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 100V N-Channel Enhancement Mode Power MOSFET D70N10 TO-220
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2376.

70A 100V N-Channel Enhancement Mode Power MOSFET D70N10 TO-220 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT D70N10/ID70N10/ED70N10/BD70N10/DD70N10 FD70N10 Maximum Drian-Source DC Voltage VDS 100 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V N-Channel SiC Power MOSFET DCEV075M120G2C TO-263
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2377.

40A 1200V N-Channel SiC Power MOSFET DCEV075M120G2C TO-263 Open Details in New Window [Aug 09, 2026]

40A 1200V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12V Three-Terminal Positive Voltage Regulator IC L7812CV TO-220M
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2378.

12V Three-Terminal Positive Voltage Regulator IC L7812CV TO-220M Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT DC Intput Voltage VO=5V-18V VI 35 V VO=24V 40 Output Current IO 1.5 V Thermal resistance junction-air RθJA 65 ºC/W Thermal resistance ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40F120M2 TO-247
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2379.

40A 1200V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40F120M2 TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 1200V Fast Recovery Diode MUR75120 TO-247
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2380.

75A 1200V Fast Recovery Diode MUR75120 TO-247 Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 1200 typ 1300 IR(uA)25ºC max 5.0 VF (V) 25ºC typ. 2.5 max 3.0 Trr (ns) typ. 70 max 100 IF(A) Single chip package 75 IF(A) Dual chip package - Features Low ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12A 100V N-Channel Enhancement Mode Power MOSFET DHD10N10 TO-252
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2381.

12A 100V N-Channel Enhancement Mode Power MOSFET DHD10N10 TO-252 Open Details in New Window [Aug 09, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 109 V ID (T=25ºC) - - 12 A BVGSS ±20 V VTH 1.5 2.6 V EAS - - 16 mJ Ptot - - 28 W Rdson 76 - 95 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 60V N-Channel Enhancement Mode Power MOSFET DHS095N06D TO-252
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2382.

80A 60V N-Channel Enhancement Mode Power MOSFET DHS095N06D TO-252 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS095N06/DHS095N06I/DHS095N06E/DHS095N06B/DHS095N06D DHS095N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 1200V Fast Recovery Diode MUR30120 TO-220
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2383.

30A 1200V Fast Recovery Diode MUR30120 TO-220 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 650V Trench FS IGBT DHG50T65LBBW TO-247
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2384.

50A 650V Trench FS IGBT DHG50T65LBBW TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 40V P-Channel Enhancement Mode Power MOSFET DHD15P04 SOP-8
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2385.

15A 40V P-Channel Enhancement Mode Power MOSFET DHD15P04 SOP-8 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHD15P04 Drian-to-Source Voltage VDSS -40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -15 A (T=100ºC) -12 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd