Jiangsu Profile
Product List
2461. 75A 650V Half Bridge IGBT Module DGA75H65M2T 34MM 
[Jul 21, 2026]
[Jul 21, 2026] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. ...
2462. 75A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC75F65M TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...
2463. 70A 100V N-Channel Enhancement Mode Power MOSFET D70N10 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT D70N10/ID70N10/ED70N10/BD70N10/DD70N10 FD70N10 Maximum Drian-Source DC Voltage VDS 100 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
2464. 150A 100V N-Channel Enhancement Mode Power MOSFET DH150N10 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH150N10/DHI150N10/DHE150N10 DHF150N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2465. 180A 100V N-Channel Enhancement Mode Power MOSFET DH180N10 TO-220 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 109 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1760 mJ Ptot - - 346 W Rdson 4.3 - 5.5 mΩ ...
2466. 13A 100V P-Channel Enhancement Mode Power MOSFET 18P10 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) -13 (Tc=100ºC) -9 A Drain ...
2467. 18A 200V N-Channel Enhancement Mode Power MOSFET 18N20 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 18N20/I18N20/E18N20/B18N20/D18N20 F18N20 Drian-Source Voltage VDS 200 V Gate-to-Source Voltage VGS ±30 V Drain ...
2468. 12A 100V N-Channel Enhancement Mode Power MOSFET DHD10N10 TO-252 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 109 V ID (T=25ºC) - - 12 A BVGSS ±20 V VTH 1.5 2.6 V EAS - - 16 mJ Ptot - - 28 W Rdson 76 - 95 mΩ ...
2469. 70A 100V N-Channel Enhancement Mode Power MOSFET FD70N10 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT FD70N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±25 V Drain Current(continuous) ID(T=25ºC) 73 A (T=100ºC) 51 A Drain ...
2470. Kp Phase Control Thyristor Price Control De Fase De Alta Potencia Industrial Kp Tiristores Esquema ... [Jun 22, 2026]
[Jun 22, 2026] Product Description Phase Control Thyristor High-Temperature Resistance: This KP500a KP1000a KP2500a SCR Thyristor Module operates within a wide temperature range of -40°C to 150°C, ensuring reliability and ...
2471. Fast Delivery Low Priced SCR Thyristor Triac Semiconductor Chips for Refrigeration Equipment [Mar 30, 2026]
[Mar 30, 2026] Product Description Experience unparalleled performance and dependability with zhendi's Round Disc Type Silicon Controlled Rectifier Thyristors Semiconductor Chips. Designed for excellence, they are the perfect ...
2472. Wafer Ring (12-inch) Dura420 SUS420J2 Stainless Steel Box Cassette for Wear-Resistant ... [Jul 02, 2026]
[Jul 02, 2026] Wafer Ring (12-inch) Dura420 SUS420J2 Stainless Steel Box Cassette for Wear-resistant Corrosion-resistant Folding-resistant Product Description Product Name 6" 8" 12" steel Metal Wafer Frame Ring For ...
2473. 2A 650V N-Channel Enhancement Mode Power MOSFET 2N65 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH85N06/DHI85N06/DHE85N06/DHB85N06/DHD85N06 DHF85N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2474. 8A 650V SiC Schottky Barrier Diode DCGT08D65G4 TO-220 [Jul 21, 2026]
[Jul 21, 2026] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2475. 112A 85V N-Channel Enhancement Mode Power MOSFET DHS043N85P DFN5X6 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 112 A (T=100ºC) 78 A Drain ...
