Jiangsu Profile
Product List
2461. 220A 20V N-Channel Enhancement Mode Power MOSFET DH009N02P DFN5X6 
[Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 220 A (T=100ºC) 155 A Drain ...
2462. 180A 60V N-Channel Enhancement Mode Power MOSFET DHS022N06E TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS02 2N06/ DHS02 2N06E/ DHS02 2N06B/ DHS02 2N06D DHS022N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2463. 25A 1700V SiC Schottky Barrier Diode DCCT25D170G1 TO-247 [Aug 09, 2026]
[Aug 09, 2026] 25A 1700V SiC Schottky Barrier Diode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2464. 25A 650V SiC Schottky Barrier Diode DCET20D65G3 TO-263 [Aug 09, 2026]
[Aug 09, 2026] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2465. 15A 600V Fast Recovery Diode MURE1560 TO-263 [Aug 09, 2026]
[Aug 09, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2466. 70A 650V Insulated Gate Bipolar Transistor IGBT G70N65D TO-247 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 140 A Collector Current (Tc=100ºC) 70 A Pulsed ...
2467. 60A 300V Fast Recovery Diode MUR6030BCT TO-247 [Aug 09, 2026]
[Aug 09, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2468. 50A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC50F65M2 TO-247 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
2469. 75A 650V Silicon Controlled Rectifier THYRISTOR DISCRETEDAGC75H65M TO-247 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...
2470. 10A 400V Fast Recovery Diode MURF1040CT TO-220F [Aug 09, 2026]
[Aug 09, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2471. 16A 200V Fast Recovery Diode MUR1620CT TO-252 [Aug 09, 2026]
[Aug 09, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2472. 20A 100V P-Channel Enhancement Mode Power MOSFET DH100P20D TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH100P20/DH100P20I/DH100P20E/DH100P20B/DH100P20D DH100P20F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2473. 80A 400V Fast Recovery Diode MUR80FU40BCT TO-247 [Aug 09, 2026]
[Aug 09, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2474. 105A 40V N-Channel Enhancement Mode Power MOSFET DH025N04P DFN5*6 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH025N04P Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 105 A (T=100ºC) 73 A Drain ...
2475. 96A 30V N-Channel Enhancement Mode Power MOSFET DH030N03 TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH030N03/DH030N03I/DH030N03E/DH030N03B/DH030N03D DH030N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
