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115A 150V N-Channel Enhancement Mode Power MOSFET DSE090N15N3A TO-263
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2521.

115A 150V N-Channel Enhancement Mode Power MOSFET DSE090N15N3A TO-263 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 40V N-Channel Enhancement Mode Power MOSFET DTE043N04NA TO-263
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2522.

120A 40V N-Channel Enhancement Mode Power MOSFET DTE043N04NA TO-263 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V SiC Schottky Barrier Diode DCGT20D65G4 TO-220
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2523.

20A 650V SiC Schottky Barrier Diode DCGT20D65G4 TO-220 Open Details in New Window [Jul 21, 2026]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC50F65M2 TO-247
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2524.

50A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC50F65M2 TO-247 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 40V N-Channel Enhancement Mode Power MOSFET DHS008N04P DFN5X6
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2525.

100A 40V N-Channel Enhancement Mode Power MOSFET DHS008N04P DFN5X6 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH019N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 100 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V N-Channel SiC Power MOSFET DCEV075M120G2C TO-263
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2526.

40A 1200V N-Channel SiC Power MOSFET DCEV075M120G2C TO-263 Open Details in New Window [Jul 21, 2026]

40A 1200V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 650V SiC Schottky Barrier Diode DCGT10D65G4 TO-220
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2527.

10A 650V SiC Schottky Barrier Diode DCGT10D65G4 TO-220 Open Details in New Window [Jul 21, 2026]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 650V Bipolar Transistor DHG60T65D TO-3PN
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2528.

60A 650V Bipolar Transistor DHG60T65D TO-3PN Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current (TJ=100ºC) 60 A Pulsed Collector Current ICM 180 A Diode ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 60V N-Channel Enhancement Mode Power MOSFET DHS065N06P DFN5X6
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2529.

80A 60V N-Channel Enhancement Mode Power MOSFET DHS065N06P DFN5X6 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DHS065N06P Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 86 A (T=100ºC) 55 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 60V N-Channel Enhancement Mode Power MOSFET DHS022N06E TO-263
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2530.

180A 60V N-Channel Enhancement Mode Power MOSFET DHS022N06E TO-263 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DHS02 2N06/ DHS02 2N06E/ DHS02 2N06B/ DHS02 2N06D DHS022N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N88E
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2531.

120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N88E Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 60V N-Channel Enhancement Mode Power MOSFET DH066N06P DFN5X6
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2532.

70A 60V N-Channel Enhancement Mode Power MOSFET DH066N06P DFN5X6 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH066N06P Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 50 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

95A 100V N-Channel Enhancement Mode Power MOSFET DSP070N10L3A DFN5X6
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2533.

95A 100V N-Channel Enhancement Mode Power MOSFET DSP070N10L3A DFN5X6 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 95 A (T=100ºC) 67 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

64A 60V N-Channel Enhancement Mode Power MOSFET DHS095N06P DFN5X6
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2534.

64A 60V N-Channel Enhancement Mode Power MOSFET DHS095N06P DFN5X6 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 52 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

200A 40V N-Channel Enhancement Mode Power MOSFET DSE012N04NA TO-263
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2535.

200A 40V N-Channel Enhancement Mode Power MOSFET DSE012N04NA TO-263 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd