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96A 30V N-Channel Enhancement Mode Power MOSFET DH030N03 TO-220C
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2491.

96A 30V N-Channel Enhancement Mode Power MOSFET DH030N03 TO-220C Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH030N03/DH030N03I/DH030N03E/DH030N03B/DH030N03D DH030N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 1200V SiC Schottky Barrier Diode DCCT20D120G4 TO-247
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2492.

20A 1200V SiC Schottky Barrier Diode DCCT20D120G4 TO-247 Open Details in New Window [Jul 21, 2026]

20A 1200V SiC Schottky Barrier Diode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

176A 68V N-Channel Enhancement Mode Power MOSFET DHS031N07P DFN5X6-8L
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2493.

176A 68V N-Channel Enhancement Mode Power MOSFET DHS031N07P DFN5X6-8L Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 176 A (T=100ºC) 123 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

96A 40V N-Channel Enhancement Mode Power MOSFET DH033N04P DFN5X6
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2494.

96A 40V N-Channel Enhancement Mode Power MOSFET DH033N04P DFN5X6 Open Details in New Window [Jul 21, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 V ID (T=25ºC) - 96 A BVGSS ±20 V VTH 2 4 V EAS - - 256 mJ Ptot - - 105 W Features Fast Switching Low ON ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 600V Fast Recovery Diode MURE1560 TO-263
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2495.

15A 600V Fast Recovery Diode MURE1560 TO-263 Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 400V Fast Recovery Diode MURF1040CT TO-220F
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2496.

10A 400V Fast Recovery Diode MURF1040CT TO-220F Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

108A 100V N-Channel Enhancement Mode Power MOSFET DHS051N10P DFN5X6
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2497.

108A 100V N-Channel Enhancement Mode Power MOSFET DHS051N10P DFN5X6 Open Details in New Window [Jul 21, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 75 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 2 4 V EAS - - 620 mJ Ptot - - 180 W Rdson 2.6 - 3.3 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

66A 40V N-Channel Enhancement Mode Power MOSFET DSP060N04LA DFN5X6
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2498.

66A 40V N-Channel Enhancement Mode Power MOSFET DSP060N04LA DFN5X6 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 66 A (T=100ºC) 47 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 85V N-Channel Enhancement Mode Power MOSFET DH050N85E TO-263
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2499.

130A 85V N-Channel Enhancement Mode Power MOSFET DH050N85E TO-263 Open Details in New Window [Jul 21, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 85 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 1156 mJ Ptot - - 300 W Rdson - 5 6 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 100V N-Channel Enhancement Mode Power MOSFET DSD065N10L3A TO-252
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2500.

100A 100V N-Channel Enhancement Mode Power MOSFET DSD065N10L3A TO-252 Open Details in New Window [Jul 21, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 100 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 306 mJ Ptot - - 115 W Rdson - - 5.5 mΩ Features AEC-Q101 ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

660A 800V N-Channel Enhancement Mode Power MOSFET DJE660N80E TO-263
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2501.

660A 800V N-Channel Enhancement Mode Power MOSFET DJE660N80E TO-263 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5.1 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

110A 200V N-Channel Enhancement Mode Power MOSFET DSN108N20N TO-3PN
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2502.

110A 200V N-Channel Enhancement Mode Power MOSFET DSN108N20N TO-3PN Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 110 A (Tc=100ºC) 78 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

110A 200V N-Channel Enhancement Mode Power MOSFET DSE108N20NA TO-263
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2503.

110A 200V N-Channel Enhancement Mode Power MOSFET DSE108N20NA TO-263 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 110 A (T=100ºC) 78 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 1700V Half Bridge IGBT MODULE DGA100H170M2T 34MM
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2504.

100A 1700V Half Bridge IGBT MODULE DGA100H170M2T 34MM Open Details in New Window [Jul 21, 2026]

1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

96A 100V N-Channel Enhancement Mode Power MOSFET DSP051N10N DFN5X6
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2505.

96A 100V N-Channel Enhancement Mode Power MOSFET DSP051N10N DFN5X6 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 96 A (T=100ºC) 67 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd