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85A 150V N-Channel Enhancement Mode Power MOSFET DHS110N15D
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2566.

85A 150V N-Channel Enhancement Mode Power MOSFET DHS110N15D Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 85 A (T=100ºC) 60 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

220A 20V N-Channel Enhancement Mode Power MOSFET DH009N02P DFN5X6
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2567.

220A 20V N-Channel Enhancement Mode Power MOSFET DH009N02P DFN5X6 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 220 A (T=100ºC) 155 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40F65M2 TO-247
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2568.

40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40F65M2 TO-247 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 400V Fast Recovery Diode MURF1640CT TO-220F
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2569.

16A 400V Fast Recovery Diode MURF1640CT TO-220F Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

450A 1200V Half Bridge IGBT MODULE DGD450H120L2T
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2570.

450A 1200V Half Bridge IGBT MODULE DGD450H120L2T Open Details in New Window [Jul 21, 2026]

1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

47A 100V N-Channel Enhancement Mode Power MOSFET DHS180N10LB TO-251B
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2571.

47A 100V N-Channel Enhancement Mode Power MOSFET DHS180N10LB TO-251B Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DHS180N10LB Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 47 A (T=100ºC) 33 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

600A 1200V Half Bridge IGBT MODULE ECONODUAL3
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2572.

600A 1200V Half Bridge IGBT MODULE ECONODUAL3 Open Details in New Window [Jul 21, 2026]

1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

High-Energy Ion Implanters for Advanced Integrated Circuit Production
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2573.

High-Energy Ion Implanters for Advanced Integrated Circuit Production Open Details in New Window [Jul 13, 2026]

Product Description Ion implantation technology has the following characteristics: single-sided collimation doping, good doping uniformity and controllability, singularity of doping elements, and it is very easy to ...

Company: Jiangsu Himalaya Semiconductor Co., Ltd.

Bidirectional Thyristor Csg3001-18A04 3000A 1800V Gate Turn-off Thyristor Gate Turn off Thyristor ...
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2574.

Bidirectional Thyristor Csg3001-18A04 3000A 1800V Gate Turn-off Thyristor Gate Turn off Thyristor ... Open Details in New Window [Jun 22, 2026]

Product Description Phase Control Thyristor High-Temperature Resistance: This KP500a KP1000a KP2500a SCR Thyristor Module operates within a wide temperature range of -40°C to 150°C, ensuring reliability and ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

Factory Direct Supply of Precision Parts 716-057993-213 Gas Injector
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2575.

Factory Direct Supply of Precision Parts 716-057993-213 Gas Injector Open Details in New Window [Jun 16, 2026]

Product Description 0040-55456 0200-00771 0200-05590 BELL JAR SHADOWRING DOME,TOP FEED IPM,300MM Introduction to Main Ceramic Products BELL JAR //0040-55456 The internal kit applicable to the AMAT Endura2 Pre-clean ...

Company: Wuxi Guoyue Electronic Technology Co., Ltd

716-057993-213 Factory Direct Supply of Precision Parts Gas Injector
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2576.

716-057993-213 Factory Direct Supply of Precision Parts Gas Injector Open Details in New Window [Jun 08, 2026]

Product Description 0040-55456 0200-00771 0200-05590 BELL JAR SHADOWRING DOME,TOP FEED IPM,300MM Introduction to Main Ceramic Products BELL JAR //0040-55456 The internal kit applicable to the AMAT Endura2 Pre-clean ...

Company: Wuxi Guoyue Electronic Technology Co., Ltd

Source Factory Ceramic Gas Injector 716-057993-213
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2577.

Source Factory Ceramic Gas Injector 716-057993-213 Open Details in New Window [Jun 08, 2026]

Product Description 0040-55456 0200-00771 0200-05590 BELL JAR SHADOWRING DOME,TOP FEED IPM,300MM Introduction to Main Ceramic Products BELL JAR //0040-55456 The internal kit applicable to the AMAT Endura2 Pre-clean ...

Company: Wuxi Guoyue Electronic Technology Co., Ltd

High Quality High Voltage Capacity Energy-Saving Controller High-Efficiency SCR Thristor Power ...
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2578.

High Quality High Voltage Capacity Energy-Saving Controller High-Efficiency SCR Thristor Power ... Open Details in New Window [Mar 30, 2026]

Product Description High Voltage Capacity and Energy-Saving: This product, the Powerpassion All SCR50A-180A/16E Pro, is a high voltage capacity energy-saving controller stabilizer designed to regulate and stabilize ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

Reliable Thyristor Triac Modules for Rectifier Inverter Application Wholesale Cheap Price
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2579.

Reliable Thyristor Triac Modules for Rectifier Inverter Application Wholesale Cheap Price Open Details in New Window [Mar 05, 2026]

Product Description Thyristor Module Durable Construction: Experience unrivaled durability with the SCR SKKT500 Triac Module, engineered to withstand the harshest conditions. With an impressive operating temperature ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

450A 1200V Half-Bridge Module DMGB450H120L2T 62mm
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2580.

450A 1200V Half-Bridge Module DMGB450H120L2T 62mm Open Details in New Window [Jul 21, 2026]

1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. 2 ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd