Jiangsu Profile
Product List
2101. 8V Three-Terminal Positive Voltage Regulator IC L7808CV TO-220 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT DC Intput Voltage VO=5V-18V VI 35 V VO=24V 40 Output Current IO 1.5 V Thermal resistance junction-air RθJA 65 ºC/W Thermal resistance ...
2102. 60A 400V Fast Recovery Diode MUR6040DCT TO-3P [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2103. 18A 200V N-Channel Enhancement Mode Power MOSFET 640 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 640/I640/E640/B640/D640 F640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...
2104. 180A 80V N-Channel Enhancement Mode Power MOSFET DH029N08 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH029N08/DHI029N08/DHE029N08 DH029N08D DH029N08B Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...
2105. 88A 60V N-Channel Enhancement Mode Power MOSFET DHD070N06 TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH070N06DHI070N06/DHE070N06/DHB070N06/DHD070N06 DHF070N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2106. 15A 650V N-Channel Super Junction Power MOSFET DHFSJ15N65 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ15N65//DHISJ15N65/DHESJ15N65 DHFSJ15N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
2107. 160A 85V N-Channel Enhancement Mode Power MOSFET DHS025N85 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS025N85/DHS025N85E DHS025N85D/DHS025N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
2108. 110A 100V N-Channel Enhancement Mode Power MOSFET DHS052N10I TO-262 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS052N10/DHS052N10I/DHS052N10E/DHS052N10B/DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2109. 180A 85V N-Channel Enhancement Mode Power MOSFET DHS020N85 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS020N85/DHS020N85E DHS020N85D/DHS020N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
2110. 8A 400V Fast Recovery Diode MUR840 TO-220 [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2111. 85A 60V N-Channel Enhancement Mode Power MOSFET DH066N06B TO-251 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ ...
2112. 150A 90V N-Channel Enhancement Mode Power MOSFET DH90N040R TO-220 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 90 - 98 V ID (T=25ºC) - - 150 A BVGSS ±20 V VTH 2 4 V EAS - - 196 mJ Ptot - - 189 W Rdson 4.0 - 4.9 mΩ ...
2113. 30A 600V Insulated Gate Bipolar Transistor IGBT G30N60D TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...
2114. 30A 60V Schottky Barrier Diode MBR30R60CTS TO-220C [Jul 21, 2026]
[Jul 21, 2026] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
2115. 7A 800V N-Channel Super Junction Power MOSFET DHDSJ7N80 TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ7N80/DHISJ7N80/DHESJ7N80/DHBSJ7N80/DHDSJ7N80 DHFSJ7N80 Drian-to-Source Voltage VDSS 800 V Gate-to-Source Voltage VGSS ±30 V Drain ...
