Jiangsu Profile
Product List
2146. 20A 60V Schottky Barrier Diode HMBRD20R60 TO-252 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 60 V RMS Reverse Voltage VR(RMS) 42 V DC Blocking Voltage VR 60 V Average Rectified Forward Current IF(AV) 20 A Repetitive ...
2147. 20A 400V Fast Recovery Diode MUR20FU40CT TO-220C [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2148. 60A 60V N-Channel Enhancement Mode Power MOSFET DHD015N06 TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 45 A Drain ...
2149. 18A 1200V N-Channel SiC Power MOSFET DCC160M120G1 TO-247 [Jul 21, 2026]
[Jul 21, 2026] 5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2150. 20A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC20F65M2 TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...
2151. 5A 1700V N-Channel SiC Power MOSFET DCCF1K0M170G1 TO-247 [Jul 21, 2026]
[Jul 21, 2026] 5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2152. 75A 1200V IGBT Module DGC75C120M2T ECONOPACK2 [Jul 21, 2026]
[Jul 21, 2026] 75A 1200V 6 in one-package 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords ...
2153. 3A 500V Intelligent Power Module DPQB03HB50MF ESOP-9 [Jul 21, 2026]
[Jul 21, 2026] Drain-Source Voltage 500V Continuous Drain Current TC = 25(Silicon limit) 3A Power Dissipation (TC = 25,Each MOSFET) 24.5W Operating Junction Temperature -40~150 Transparency here reduces post-purchase ...
2154. 60A 68V N-Channel Enhancement Mode Power MOSFET DH105N07D TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH105N07/DH105N07I/DH105N07EDH105N07B/DH105N07D DH105N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2155. 35A 100V P-Channel Enhancement Mode Power MOSFET DH100P30D TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH100P30D Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -35 A (T=100ºC) -22 A Drain ...
2156. 70A 100V N-Channel Enhancement Mode Power MOSFET ED70N10 TO-263 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT D70N10/ID70N10/ED70N10/BD70N10/DD70N10 FD70N10 Drian-Source Voltage VDS 100 V Gate-Source Voltage VGS ±25 V Drain ...
2157. 25A 100V N-Channel Enhancement Mode Power MOSFET 25N10 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 25N10/I25N10/E25N10/B25N10/D25N10 F25N10 Maximum Drian-Source DC Voltage VDS 100 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...
2158. 60A 100V N-Channel Enhancement Mode Power MOSFET 60N10 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 60N10/I60N10/E60N10/B60N10/D60N10 F60N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2159. 25A 100V N-Channel Enhancement Mode Power MOSFET D25N10 TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 25N10/I25N10/E25N10/B25N10/D25N10 F25N10 Maximum Drian-Source DC Voltage VDS 100 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...
2160. 5A 500V N-Channel Enhancement Mode Power MOSFET D830 TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 830/D830 F830 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 5 A Total ...
