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18A 200V N-Channel Enhancement Mode Power Mosfet 18n20 to-220c
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2206.

18A 200V N-Channel Enhancement Mode Power Mosfet 18n20 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 18N20/I18N20/E18N20/B18N20/D18N20 F18N20 Drian-Source Voltage VDS 200 V Gate-to-Source Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V Schottky Barrier Diode Mbrd30100CT to-252b
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2207.

30A 100V Schottky Barrier Diode Mbrd30100CT to-252b Open Details in New Window [Jun 23, 2025]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

83A 600V N-Channel Super Junction Power Mosfet Djc032n60f to-247
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2208.

83A 600V N-Channel Super Junction Power Mosfet Djc032n60f to-247 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 83 A (T=100ºC) 53 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 120V N-Channel Enhancement Mode Power Mosfet Dh150n12 to-220c
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2209.

50A 120V N-Channel Enhancement Mode Power Mosfet Dh150n12 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH150N12 / DH150N12E DH150N12B / DH150N12D DH150N 12F Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

-140A -60V P-Channel Enhancement Mode Power Mosfet DTG050p06la to-220c
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2210.

-140A -60V P-Channel Enhancement Mode Power Mosfet DTG050p06la to-220c Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS -60 - -70 V ID (T=25ºC) - - -140 A BVGSS ±20 V VTH -1 -3 V EAS - - 1369 mJ Ptot - - 2.5 W Rdson 14 - 5.8 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

650V 16A Sic Schottky Barrier Diode Sic1665
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2211.

650V 16A Sic Schottky Barrier Diode Sic1665 Open Details in New Window [Jun 23, 2025]

16A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 700V N-Channel Enhancement Mode Power Mosfet F8n70 to-220f
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2212.

8A 700V N-Channel Enhancement Mode Power Mosfet F8n70 to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHF8N70 Drian-to-Source Voltage VDSS 700 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 1200V Fast Recovery Diode Mur15fu120 to-220c-2L
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2213.

15A 1200V Fast Recovery Diode Mur15fu120 to-220c-2L Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

140A 30V P-Channel Enhancement Mode Power Mosfet Dh060p03 to-220c
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2214.

140A 30V P-Channel Enhancement Mode Power Mosfet Dh060p03 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH060P 03F DH060P03/DH060P03E/ DH060P03B/DH060P03D Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

170A 100V N-Channel Enhancement Mode Power Mosfet DSG030n10n3 to-220c
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2215.

170A 100V N-Channel Enhancement Mode Power Mosfet DSG030n10n3 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 134 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

-85A -60V P-Channel Enhancement Mode Power Mosfet Dtd125p06la to-252
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2216.

-85A -60V P-Channel Enhancement Mode Power Mosfet Dtd125p06la to-252 Open Details in New Window [Jun 23, 2025]

Features High density cell design for ultra low Rdson 175°C operating temperature Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 650V N-Channel Super Junction Power Mosfet Djc070n65m2 to-247
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2217.

70A 650V N-Channel Super Junction Power Mosfet Djc070n65m2 to-247 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 1200V Sic Schottky Barrier Diode Dcgt15D120g4 to-220-2L
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2218.

15A 1200V Sic Schottky Barrier Diode Dcgt15D120g4 to-220-2L Open Details in New Window [Jun 23, 2025]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

33A 60V N-Channel Enhancement Mode Power Mosfet Dhf60n06 to-220f
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2219.

33A 60V N-Channel Enhancement Mode Power Mosfet Dhf60n06 to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 33 A (T=100ºC) 22 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

140A 150V N-Channel Enhancement Mode Power Mosfet DSG070n15na to-220c
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2220.

140A 150V N-Channel Enhancement Mode Power Mosfet DSG070n15na to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 140 A (T=100ºC) 99 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd