Jiangsu Profile
Product List
2161. 100A 100V N-Channel Enhancement Mode Power MOSFET DHS065N10 TO-220C 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS065N10/ DHS065N10E/ DHS065N10B/ DHS06 5N10D DHS06 5N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2162. 18A 200V N-Channel Enhancement Mode Power MOSFET D18N20 TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 18N20/I18N20/E18N20/B18N20/D18N20 F18N20 Drian-Source Voltage VDS 200 V Gate-to-Source Voltage VGS ±30 V Drain ...
2163. 240A 100V N-Channel Enhancement Mode Power MOSFET DHS025N10 TO-220C [Jul 21, 2026]
[Jul 21, 2026] Parameter SYMBOL VALUE UNIT DHS025N10/DHS025N10E DHS025N10D/ DHS025N10B Drian-to-Source Voltage BVDSS 100 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain ...
2164. 120A 100V N-Channel Enhancement Mode Power MOSFET D120N10 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT D120N10ZR/ ED120N10ZR FD120N10 ZR Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2165. 25A 100V N-Channel Enhancement Mode Power MOSFET D25N10 TO-252B [Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 V ID (T=25ºC) - 30 A BVGSS ±20 V VTH 2 4 V EAS - - 36 mJ Ptot - - 88 W Features Fast Switching Low ON Resistance Low ...
2166. 12A 100V N-Channel Enhancement Mode Power MOSFET DHD12N10 TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHB12N10/DHD12N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A (T=100ºC) 8.5 A Drain ...
2167. 50A 200V N-Channel Enhancement Mode Power MOSFET DHF50N20 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHF50N20 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±25 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
2168. 105A 150V N-Channel Enhancement Mode Power MOSFET DHS110N15D TO-220C & DHS110N15D TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS110N15/DHS110N15I/DHS110N15E DHS110N15F Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2169. 30A 100V P-Channel Enhancement Mode Power MOSFET DH100P28 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2170. 20A 60V P-Channel Enhancement Mode Power MOSFET DHD9Z24 TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH9Z24DHI9Z24IDHE9Z24/DHB9Z24/DHD9Z24 DHF9Z24 Drian-to-Source Voltage VDSS -60 V Gate-to-Drain Voltage VGSS ±20 V Drain ...
2171. 110A 100V N-Channel Enhancement Mode Power MOSFET DHS052N10 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS052N10/DHS052N10I/DHS052N10E/DHS052N10B/DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2172. Zhendi Electronic Components 2.5kHz-20kHz Customized SCR High Frequency Thyristors Ka3000A1000V ... [Jun 26, 2026]
[Jun 26, 2026] Product Description Phase Control Thyristor High-Temperature Resistance: This KP500a KP1000a KP2500a SCR Thyristor Module operates within a wide temperature range of -40°C to 150°C, ensuring reliability and ...
2173. Peltier Thermoelectric Cooling Modules OEM 30*30mm Modulo De Enfriamiento Termoelectrico Peltier ... [Jun 22, 2026]
[Jun 22, 2026] Product Description Discover the TEC1-12705: a masterfully engineered 40x40mm thermoelectric cooler, expertly crafted to provide unmatched thermal management for a wide array of applications. Chip Type: Featuring ...
2174. Modulo IGBT Mejorado Para Vehiculos Hibridos Avanzados Y Autobuses Electricos Module IGBT Gd50 [Jun 22, 2026]
[Jun 22, 2026] Product Description HCG100FS120E1B VcES=1200V,Ic (nom)=100A Features Low inductive design Low Vcesat with high junction temperature Fast &soft reverse recovery anti-parallel FWD Low Switching ...
2175. All Power Semiconductor IGBT Rectifier Diode Mosfets SCR Bridge Rectifier Module IGBT/Mosfet Power ... [Jun 22, 2026]
[Jun 22, 2026] Product Description HCG100FS120E1B VcES=1200V,Ic (nom)=100A Features Low inductive design Low Vcesat with high junction temperature Fast &soft reverse recovery anti-parallel FWD Low Switching ...
