Jiangsu Profile
Product List
2161. 10A 650V Sic Schottky Barrier Diode Dcgt10d65g4 to-220-2 
[Jun 23, 2025]
[Jun 23, 2025] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2162. Hot Sale 25A 110V N-Channel Enhancement Mode Power Mosfet Dhs250n11d to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 110 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A (T=100ºC) 18 A Drain ...
2163. 65A 1200V N-Channel Sic Power Mosfet Dcev040m120A2 to-263-7 [Jun 23, 2025]
[Jun 23, 2025] Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives Switch Mode ...
2164. 65A 1200V N-Channel Sic Power Mosfet Dcev040m120A2 to-263-7 [Jun 23, 2025]
[Jun 23, 2025] Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives Switch Mode ...
2165. 650V 8A Sic Schottky Barrier Diode Dcgt08d65g4 to-220-2 [Jun 23, 2025]
[Jun 23, 2025] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2166. 1.2mm 1.5mm Thickness Intrinsic Semiconductor Dura420 SUS420J2 Water Ring with Stainless Steel ... [Dec 31, 2024]
[Dec 31, 2024] 1.2mm 1.5mm Thickness Intrinsic Semiconductor Dura420 SUS420J2 Water Ring with Stainless Steel Materials Product Description Product Name 6" 8" 12" steel Metal Wafer Frame Ring For ...
2167. 500V/3A Half-Bridge Ipm with Internal Integrated Temperature Detection Output Dpqb03hb50mf Esop-9 [Aug 09, 2025]
[Aug 09, 2025] Specification Drain-Source Voltage 500V Continuous Drain Current TC = 25℃(Silicon limit) 3A Power Dissipation (TC = 25℃,Each MOSFET) 24.5W Operating Junction Temperature -40~150℃ Packing & Delivery Transparency here ...
2168. Hot Sale Three-Terminal 1.0A Positive Voltage Regulator IC 78m05A to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT DC Intput Voltage VI 35 V Output Current IO 1.0 V Thermal resistance junction-air RθJA 87 ºC/W Thermal resistance ...
2169. Hot Sale 14A 650V N-Channel Enhancement Mode Power Mosfet F14n65 to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 14 A (T=100ºC) 11 A Drain ...
2170. 99A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10p Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 99 A (T=100ºC) 70 A Drain ...
2171. 100A 40V N-Channel Enhancement Mode Power Mosfet Dhs008n04p Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH019N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 100 A Drain ...
2172. 60A 300V Fast Recovery Diode Mur6030bca to-247s [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2173. 130A 85V N-Channel Enhancement Mode Power Mosfet DSP038n08na Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 130 A (T=100ºC) 92 A Drain ...
2174. 235A 30V N-Channel Enhancement Mode Power Mosfet Dh012n03u Toll Package [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 235 A (T=100ºC) 148 A Drain ...
2175. 170A 85V N-Channel Enhancement Mode Power Mosfet DSP032n08na Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 85 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 120 A Drain ...
