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240A 100V N-Channel Enhancement Mode Power MOSFET DSG024N10N3 TO-220C
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2401.

240A 100V N-Channel Enhancement Mode Power MOSFET DSG024N10N3 TO-220C Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

200A 40V N-Channel Enhancement Mode Power MOSFET DSG014N04N TO-220C
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2402.

200A 40V N-Channel Enhancement Mode Power MOSFET DSG014N04N TO-220C Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 650V SiC Schottky Barrier Diode DCC40D65G4 TO-247
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2403.

40A 650V SiC Schottky Barrier Diode DCC40D65G4 TO-247 Open Details in New Window [Jul 21, 2026]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

4.8A 650V N-Channel Super Junction Power MOSFET DHDSJ5N65 TO-252
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2404.

4.8A 650V N-Channel Super Junction Power MOSFET DHDSJ5N65 TO-252 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 4.8 A (T=100ºC) 3.0 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

83A 600V N-Channel Super Junction Power MOSFET DJC032N60F TO-247
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2405.

83A 600V N-Channel Super Junction Power MOSFET DJC032N60F TO-247 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 83 A (T=100ºC) 53 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

215A 85V N-Channel Enhancement Mode Power MOSFET DH025N08 TO-220C
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2406.

215A 85V N-Channel Enhancement Mode Power MOSFET DH025N08 TO-220C Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 215 A (T=100ºC) 136 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 60V N-Channel Enhancement Mode Power MOSFET DHS025N06D TO-252
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2407.

120A 60V N-Channel Enhancement Mode Power MOSFET DHS025N06D TO-252 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 107 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 1200V SiC Schottky Barrier Diode DCC20D120G4 TO-247
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2408.

20A 1200V SiC Schottky Barrier Diode DCC20D120G4 TO-247 Open Details in New Window [Jul 21, 2026]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 700V N-Channel Enhancement Mode Power MOSFET F8N70 TO-220F
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2409.

8A 700V N-Channel Enhancement Mode Power MOSFET F8N70 TO-220F Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DHF8N70 Drian-to-Source Voltage VDSS 700 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

115A 150V N-Channel Enhancement Mode Power MOSFET DSG092N15N3A TO-220C
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2410.

115A 150V N-Channel Enhancement Mode Power MOSFET DSG092N15N3A TO-220C Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 60V N-Channel Enhancement Mode Power MOSFET DH066N06D TO-252B
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2411.

100A 60V N-Channel Enhancement Mode Power MOSFET DH066N06D TO-252B Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH066N06D Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 63 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 40V N-Channel Enhancement Mode Power MOSFET DTG045N04NA TO-220C
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2412.

120A 40V N-Channel Enhancement Mode Power MOSFET DTG045N04NA TO-220C Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

68A 100V N-Channel Enhancement Mode Power MOSFET DH140N10D TO-252B
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2413.

68A 100V N-Channel Enhancement Mode Power MOSFET DH140N10D TO-252B Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH140N10D Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 68 A (T=100ºC) 48 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

25A 110V N-Channel Enhancement Mode Power MOSFET DHS250N11D TO-252B
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2414.

25A 110V N-Channel Enhancement Mode Power MOSFET DHS250N11D TO-252B Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 110 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A (T=100ºC) 18 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 100V N-Channel Enhancement Mode Power MOSFET DSG040N10N3A TO-220C
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2415.

180A 100V N-Channel Enhancement Mode Power MOSFET DSG040N10N3A TO-220C Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd