Jiangsu Profile
Product List
2446. 16A 600V Fast Recovery Diode MURF1660CT TO-220F 
[Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2447. 18A 200V N-Channel Enhancement Mode Power MOSFET F640 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 640/I640/E640/B640/D640 F640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...
2448. 80A 68V N-Channel Enhancement Mode Power MOSFET DH072N07D TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH072N07/DH072N07I/DH072N07E/ DH072N07B/DH072N07D DH072N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2449. 10A 200V Fast Recovery Diode D92-02A TO-3PN [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V Working Peak Reverse Voltage VRWM 200 V DC Blocking Voltage VR 200 V Average Rectified Forward ...
2450. 130A 100V N-Channel Enhancement Mode Power MOSFET DHS130N10D TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS130N10/DHS130N10I/DHS130N10E/DHS130N10B/DHS130N10D DHS130N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2451. 60A 1200V Fast Recovery Diode MUR60120 TO-247 [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2452. 15V Three-Terminal Positive Voltage Regulator IC 78M15A [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT DC Intput Voltage VI 35 V Output Current IO 1.0 V Thermal resistance junction-air RθJA 87 ºC/W Thermal resistance ...
2453. 105A 68V N-Channel Enhancement Mode Power MOSFET DHS055N07 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHF85N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 105 A (T=100ºC) 73.5 A Drain ...
2454. 50A 100V N-Channel Enhancement Mode Power MOSFET DSB190N10L3 [Jul 21, 2026]
[Jul 21, 2026] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2455. 15A 600V Fast Recovery Diode MURF1560 TO-220F [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2456. 210A 60V N-Channel Enhancement Mode Power MOSFET N6005 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT N6005/IN6005/EN6005 FN6005 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain ...
2457. 17A 650V N-Channel Super Junction Power MOSFET DHSJ17N65 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ17N65/DHESJ17N65/DHSJ17N65 DHFSJ17N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) ...
2458. 6A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGD06F65M2 TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 12 A Collector Current (Tc=100ºC) 6 A Pulsed ...
2459. 10A 600V Fast Recovery Diode MURF10FU60 TO-220F [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2460. 210A 60V N-Channel Enhancement Mode Power MOSFET DHI027N06 TO-262 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH027N06//DHI027N06/DHE027N06/DH027N06D/DH027N06B DHF027N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Drian Voltage VGSS ±25 V Drain ...
