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30A 100V Schottky Barrier Diode MBRD30100CT TO-252B
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2386.

30A 100V Schottky Barrier Diode MBRD30100CT TO-252B Open Details in New Window [Jul 21, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 85V N-Channel Enhancement Mode Power MOSFET DSG048N08N3 TO-220C
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2387.

120A 85V N-Channel Enhancement Mode Power MOSFET DSG048N08N3 TO-220C Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DSG048N08N3 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 84 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 60V N-Channel Enhancement Mode Power MOSFET DHS025N06B TO-251B
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2388.

120A 60V N-Channel Enhancement Mode Power MOSFET DHS025N06B TO-251B Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 107 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 120V N-Channel Enhancement Mode Power MOSFET DSG140N12N3 TO-220C
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2389.

70A 120V N-Channel Enhancement Mode Power MOSFET DSG140N12N3 TO-220C Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 40V N-Channel Enhancement Mode Power MOSFET DH025N04D TO-252B
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2390.

130A 40V N-Channel Enhancement Mode Power MOSFET DH025N04D TO-252B Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH025N04 /DH025N04E DH025N04B/DH025N04D DH025N0 4F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

4A 650V N-Channel Enhancement Mode Power MOSFET D4N65 TO-252
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2391.

4A 650V N-Channel Enhancement Mode Power MOSFET D4N65 TO-252 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT 4N65/I4N65/E4N65/B4N65/D4N65 F4N65 Drian-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 20V N-Channel Enhancement Mode Power MOSFET DH048N02D TO-252
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2392.

60A 20V N-Channel Enhancement Mode Power MOSFET DH048N02D TO-252 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH048N02B/DH048N02D Drian-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±12 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 42 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 400V Fast Recovery Diode MUR1640CT TO-220
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2393.

16A 400V Fast Recovery Diode MUR1640CT TO-220 Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

96A 30V N-Channel Enhancement Mode Power MOSFET DH030N03P DFN5
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2394.

96A 30V N-Channel Enhancement Mode Power MOSFET DH030N03P DFN5 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH030N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 96 A (T=100ºC) 67 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

145A 60V N-Channel Enhancement Mode Power MOSFET 6-8L DFN5
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2395.

145A 60V N-Channel Enhancement Mode Power MOSFET 6-8L DFN5 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 140 A (T=100ºC) 103 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC60F65M TO-247
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2396.

60A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC60F65M TO-247 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DHG15T65DLBBF TO-220
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2397.

15A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DHG15T65DLBBF TO-220 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current (TJ=100ºC) 15 A Pulsed Collector Current ICM 60 A Diode Continuous ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

2A 650V N-Channel Enhancement Mode Power MOSFET D2N65
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2398.

2A 650V N-Channel Enhancement Mode Power MOSFET D2N65 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT D2N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 2 A (T=100ºC) 1.3 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 60V N-Channel Enhancement Mode Power MOSFET DHS022N06 TO-220
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2399.

180A 60V N-Channel Enhancement Mode Power MOSFET DHS022N06 TO-220 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DHS022N06/DHS022N06E/DHS022N06B/DHS022N06D DHS022N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12A 650V N-Channel Enhancement Mode Power MOSFET 12N65D
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2400.

12A 650V N-Channel Enhancement Mode Power MOSFET 12N65D Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT 12N65D Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd