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60A 300V Fast Recovery Diode MUR6030NCS
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2506.

60A 300V Fast Recovery Diode MUR6030NCS Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 135V N-Channel Enhancement Mode Power MOSFET DSE043N14N TO-263
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2507.

180A 135V N-Channel Enhancement Mode Power MOSFET DSE043N14N TO-263 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 120V N-Channel Enhancement Mode Power MOSFET DSE140N12N3 TO-263
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2508.

70A 120V N-Channel Enhancement Mode Power MOSFET DSE140N12N3 TO-263 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 1200V Fast Recovery Diode MUR15FU120 TO-220C
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2509.

15A 1200V Fast Recovery Diode MUR15FU120 TO-220C Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 300V Fast Recovery Diode MUR6030BCT TO-247
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2510.

60A 300V Fast Recovery Diode MUR6030BCT TO-247 Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

5A 1200V SiC Schottky Barrier Diode DCGT05D120G3 TO-220
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2511.

5A 1200V SiC Schottky Barrier Diode DCGT05D120G3 TO-220 Open Details in New Window [Jul 21, 2026]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 1200V SiC Schottky Barrier Diode DCGT10D120G4 TO-220
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2512.

10A 1200V SiC Schottky Barrier Diode DCGT10D120G4 TO-220 Open Details in New Window [Jul 21, 2026]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

6A 650V SiC Schottky Barrier Diode DCGT06D65G4 TO-220
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2513.

6A 650V SiC Schottky Barrier Diode DCGT06D65G4 TO-220 Open Details in New Window [Jul 21, 2026]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

105A 40V N-Channel Enhancement Mode Power MOSFET DH025N04P DFN5*6
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2514.

105A 40V N-Channel Enhancement Mode Power MOSFET DH025N04P DFN5*6 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH025N04P Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 105 A (T=100ºC) 73 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

108A 85V N-Channel Enhancement Mode Power MOSFET DHS042N85P DFN5X6
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2515.

108A 85V N-Channel Enhancement Mode Power MOSFET DHS042N85P DFN5X6 Open Details in New Window [Jul 21, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 85 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 1 2 V EAS - - 290 mJ Ptot - - 131 W Rdson 1.5 - 4.2 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

170A 30V N-Channel Enhancement Mode Power MOSFET DHS010N03P DFN5X6
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2516.

170A 30V N-Channel Enhancement Mode Power MOSFET DHS010N03P DFN5X6 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 120 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 650V Silicon Controlled Rectifier THYRISTOR DISCRETEDAGC75H65M TO-247
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2517.

75A 650V Silicon Controlled Rectifier THYRISTOR DISCRETEDAGC75H65M TO-247 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

170A 85V N-Channel Enhancement Mode Power MOSFET DSP032N08NA DFN5X6
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2518.

170A 85V N-Channel Enhancement Mode Power MOSFET DSP032N08NA DFN5X6 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 85 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 120 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10.6A 700V N-Channel Super Junction Power MOSFET DJF420N70T TO-220F
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2519.

10.6A 700V N-Channel Super Junction Power MOSFET DJF420N70T TO-220F Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 10.6 A (T=100ºC) 7.6 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

55A 650V N-Channel SiC Power MOSFET DCEV030M65G2 TO-263
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2520.

55A 650V N-Channel SiC Power MOSFET DCEV030M65G2 TO-263 Open Details in New Window [Jul 21, 2026]

Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives Switch Mode ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd