Jiangsu Profile
Product List
2581. Silicon Controlled Rectifier Thyristor 2P4M TO-126 
[Aug 08, 2026]
[Aug 08, 2026] Description 2P4M Micro trigger series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic ...
2582. Advanced Automatic Wafer Placement System for Precision Manufacturing [Jul 16, 2026]
[Jul 16, 2026] Product Description An automatic feeding system compatible with SMT type feeding feeders, Tray trays and Wafer discs; The adoption of high-strength steel frame & spindle (X/Y) precision castings & marble platform ...
2583. Factory Direct Round Disc Type Silver Finish SCR Thyristors Semi-Conductor Chips [Jul 06, 2026]
[Jul 06, 2026] Product Description High-Quality Semiconductor Chips: Elevate your projects with Zhendi's premium Round Disc Type Silicon Controlled Rectifier Thyristors Semi-conductor Chips. Renowned for their outstanding performance ...
2584. Silicon Controlled Rectifier SCR Thyristors Semi-Conductor Chips with 12-Month Warranty [Jul 06, 2026]
[Jul 06, 2026] Product Description High-Quality Semiconductor Chips: Experience unparalleled performance and steadfast reliability with Zhendi's Round Disc Type Silicon Controlled Rectifier Thyristors Semi-conductor Chips. Perfectly ...
2585. 3A 500V Intelligent Power Module DPQB03HB50MF ESOP-9 [Sep 04, 2026]
[Sep 04, 2026] Drain-Source Voltage 500V Continuous Drain Current TC = 25(Silicon limit) 3A Power Dissipation (TC = 25,Each MOSFET) 24.5W Operating Junction Temperature -40~150 Transparency here reduces post-purchase ...
2586. 210A 60V N-Channel Enhancement Mode Power MOSFET DH027N06 TO-220C [Aug 09, 2026]
[Aug 09, 2026] Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features Low on ...
2587. Oxide and Borated Dumet Lead Wire for Diode [Jul 01, 2026]
[Jul 01, 2026] Dumet wire used as All kinds of light bulb Ni 41~43%, Fe Balance Dumet is a kind of permanent matching with soft glass sealing double metal alloy materials, has a good thermal expansion coefficient, mechanical ...
2588. 30X30 Peltier 30X30mm Tec Thermoelectric Module Peltier Cooler [Jun 23, 2026]
[Jun 23, 2026] Product Description Discover the TEC1-12705: a masterfully engineered 40x40mm thermoelectric cooler, expertly crafted to provide unmatched thermal management for a wide array of applications. Chip Type: Featuring ...
2589. Original IGBT Module Skm195GB126D Skm195GB124DN Skm195GB126DN IGBT Modules 400ah [Jun 22, 2026]
[Jun 22, 2026] Product Description HCG100FS120E1B VcES=1200V,Ic (nom)=100A Features Low inductive design Low Vcesat with high junction temperature Fast &soft reverse recovery anti-parallel FWD Low Switching ...
2590. Zhendi Kp3000A High Voltage SCR Thyristor 1200-1800V, 36-65 Series Single-Phase Thyristor [Jun 22, 2026]
[Jun 22, 2026] Product Description Phase Control Thyristor High-Temperature Resistance: Dive into unparalleled performance with our KP500a KP1000a KP2500a SCR Thyristor Module, engineered to excel across a broad temperature spectrum ...
2591. SMB, Schottky Rectifier Diode 3A 40V SMB Case Ss34 [Dec 11, 2025]
[Dec 11, 2025] 3A,40V-SCHOTTKY DIODE-SS34/SK34(SMB CASE) Datasheet Products list SURFACE MOUNE SCHOTTKY BARRIER RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum ...
2592. SMB, Schottky Barrier Rectifier Diode SMB Case Ss36 [Dec 11, 2025]
[Dec 11, 2025] 3A,60V-SCHOTTKY DIODE-SS36/SK36(SMB CASE) Datasheet Products list SURFACE MOUNE SCHOTTKY BARRIER RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum ...
2593. 3A, 800V, Fast Recovery Rectifierd Diode Fr306 [Dec 11, 2025]
[Dec 11, 2025] 3A,50--1000V-Fast Recovery Rectifierd Diode-FR301--FR307 3A,800V,Fast Recovery Rectifierd Diode FR306 Datasheet PRODUCT SERIES Reliability Test List HIGH RELIABILITY-TEST LIST ...
2594. Innovative Laser Doping Systems for Advanced Semiconductor Solutions [Aug 17, 2026]
[Aug 17, 2026] Product Description The laser energy is used to promote the diffusion of boron atoms in the silicon wafer to achieve a selective emitter SE structure. By re-doping in the contact area between the metal grid and the ...
2595. 450A 1200V Half Bridge IGBT MODULE DGD450H120L2T Econodual3 [Aug 08, 2026]
[Aug 08, 2026] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
