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60A 650V SiC Schottky Barrier Diode DCC60D65G3 TO-247
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2671.

60A 650V SiC Schottky Barrier Diode DCC60D65G3 TO-247 Open Details in New Window [Aug 09, 2026]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

1700V IGBT Module DGC75C170M2T
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2672.

1700V IGBT Module DGC75C170M2T Open Details in New Window [Aug 03, 2026]

75A 1700V 6 in one-package 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Housing, Double RF, Rfxt Cu 0200-07448
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2673.

Housing, Double RF, Rfxt Cu 0200-07448 Open Details in New Window [Jul 29, 2026]

Product Description 0040-55456 0200-00771 0200-05590 BELL JAR SHADOWRING DOME,TOP FEED IPM,300MM Introduction to Main Ceramic Products BELL JAR //0040-55456 The internal kit applicable to the AMAT Endura2 Pre-clean ...

Company: Wuxi Guoyue Electronic Technology Co., Ltd

160A 30V N-Channel Enhancement Mode Power MOSFET DH020N03P DFN5
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2674.

160A 30V N-Channel Enhancement Mode Power MOSFET DH020N03P DFN5 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH020N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 160 A (T=100ºC) 112 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

145A 40V N-Channel Enhancement Mode Power MOSFET DHS021N04P DFN5
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2675.

145A 40V N-Channel Enhancement Mode Power MOSFET DHS021N04P DFN5 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 145 A (T=100ºC) 101 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

RC Absorption/Snubber Circuit Module Relay Contact Protection Resistance Surge
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2676.

RC Absorption/Snubber Circuit Module Relay Contact Protection Resistance Surge Open Details in New Window [May 19, 2026]

Product Description Description: RC absorption circuit is also called RC Snubber circuit. It is a circuit structure in which resistors and capacitors are connected in series and connected in parallel with switching ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

Tec1-12705 Peltier Module for Efficient 12V Cooling Solutions Cooling Element
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2677.

Tec1-12705 Peltier Module for Efficient 12V Cooling Solutions Cooling Element Open Details in New Window [Mar 06, 2026]

Product Description Introducing the TEC1-12705, a highly versatile 40x40mm thermoelectric cooler meticulously crafted to deliver unparalleled thermal management for your cooling needs. Chip Type: Discover the ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

Industrial Multi-Phase Solid State SSR Control Power Relays 5V 5A High Power Switch Protective
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2678.

Industrial Multi-Phase Solid State SSR Control Power Relays 5V 5A High Power Switch Protective Open Details in New Window [Feb 10, 2026]

Product Description Solid State Relay High-Power Reliability: Discover the pinnacle of advanced engineering with our miniature SSR solid state relay, meticulously crafted to deliver industry-leading reliability. ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

Zhendi Electronic Components 7n65 Mosfet
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2679.

Zhendi Electronic Components 7n65 Mosfet Open Details in New Window [Jan 04, 2026]

Product Description Product features: Our advanced technology showcases remarkable features that set the standard in electronic components, ensuring superior performance and durability. Single mesa structure (Single ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

Three/Four Phase Rope CT Sensor 200ka 1000A/100mv 85mv Probe Current Transformer Flexible Rogowski ...
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2680.

Three/Four Phase Rope CT Sensor 200ka 1000A/100mv 85mv Probe Current Transformer Flexible Rogowski ... Open Details in New Window [Dec 05, 2025]

Audited Supplier

Three/Four Phase Rope CT Sensor 200ka 1000A/100mv 85mv Probe Current Transformer Flexible Rogowski Coil: 3 phase Rogowski Coil Flex CT 1000A/100mV Jiangyin Spark RS rogowski coil is flexible, like rope ,it ...

Company: Jiangyin Spark Electronic Technology Co., Ltd.

20A 600V Fast Recovery Diode MUR2060CT TO-220
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2681.

20A 600V Fast Recovery Diode MUR2060CT TO-220 Open Details in New Window [Aug 13, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 200V Fast Recovery Diode MUR3020DCT TO-3PN
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2682.

30A 200V Fast Recovery Diode MUR3020DCT TO-3PN Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 1200V Fast Recovery Diode MUR15FU120 TO-220C
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2683.

15A 1200V Fast Recovery Diode MUR15FU120 TO-220C Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 200V Fast Recovery Diode D92-02B TO-3P
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2684.

10A 200V Fast Recovery Diode D92-02B TO-3P Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V Working Peak Reverse Voltage VRWM 200 V DC Blocking Voltage VR 200 V Average Rectified Forward ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 100V Schottky Barrier Diode MBRF10100CT TO-220& MBRF10100CT TO-220F
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2685.

10A 100V Schottky Barrier Diode MBRF10100CT TO-220& MBRF10100CT TO-220F Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.79 max 0.85 IF(A) Single chip package 5 IF(A) Dual chip package 10 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd