Jiangsu Profile
Product List
2221. 100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b 
[Jun 23, 2025]
[Jun 23, 2025] 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS ...
2222. Dh045n06p Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH045N06P Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 115 A (T=100ºC) 80 A Drain ...
2223. 20A 100V Best Sale Schottky Barrier Diode Mbr20100CT to-252 [Jun 23, 2025]
[Jun 23, 2025] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications converters free-wheeling diodes free-wheeling ...
2224. 500V/3A Half-Bridge Ipm with Internal Integrated Temperature Detection Output Dpqb03hb50mf Esop-9 [Aug 09, 2025]
[Aug 09, 2025] Specification Drain-Source Voltage 500V Continuous Drain Current TC = 25℃(Silicon limit) 3A Power Dissipation (TC = 25℃,Each MOSFET) 24.5W Operating Junction Temperature -40~150℃ Packing & Delivery Transparency here ...
2225. 650V IGBT Module Dgq450c65m2t [Jun 23, 2025]
[Jun 23, 2025] Hot sale IGBT MODULE FOR SOLAR INVERTER APPLICATIONS, WITH VARIOUS MODELS.
2226. 180A 100V N-Channel Enhancement Mode Power Mosfet DSG040n10n3a to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
2227. Hot Sale 80A 40V N-Channel Enhancement Mode Power Mosfet Dh045n04p [Sep 09, 2025]
[Sep 09, 2025] Features Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% ΔVDS test Applications Power switching applications Inverter ...
2228. 100A 1700V Half Bridge Module Dga100h170m2t 34mm [Jun 23, 2025]
[Jun 23, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2229. Hot Sale 105A 40V N-Channel Enhancement Mode Power Mosfet Dh025n04p Dfn5*6-8 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH025N04P Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 105 A (T=100ºC) 73 A Drain ...
2230. Hot Sale 81A 30V N-Channel Enhancement Mode Power Mosfet Dhp90n03b17 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS020N88U Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 81 A (T=100ºC) 57 A Drain ...
2231. 600A 650V Half Bridge Module Dgd600h65m2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2232. 900A 750V Half Bridge Module Dgd900h75L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2233. 900A 750V Half Bridge Module Dgd900h75L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2234. 300A 1200V Half Bridge Module Dgd300h120L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2235. 900A 1200V Half Bridge Module Dgd900h120L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
