Made-in-china.com

Made-in-Jiangsu.com

Home » Featured Products »

Semiconductor

» Jiangsu Product List

Product List

Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor G50t65ds to-247s
Contact Now

2041.

Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor G50t65ds to-247s Open Details in New Window [Feb 04, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120V/25mΩ /36A N-Mosfet Dse270n12n3
Contact Now

2042.

120V/25mΩ /36A N-Mosfet Dse270n12n3 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 36 A (Tc=100ºC) 23 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 30V N-Channel Enhancement Mode Power Mosfet Dh033n03D to-252
Contact Now

2043.

100A 30V N-Channel Enhancement Mode Power Mosfet Dh033n03D to-252 Open Details in New Window [Sep 01, 2025]

PARAMETER SYMBOL VALUE UNIT DH033N03/DH033N03I/DH033N03E/DH033N03B/DH033N03D DH033N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 68V N-Channel Enhancement Mode Power Mosfet Dh105n07b to-251
Contact Now

2044.

60A 68V N-Channel Enhancement Mode Power Mosfet Dh105n07b to-251 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH105N07/DH105N07I/DH105N07EDH105N07B/DH105N07D DH105N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 60V N-Channel Enhancement Mode Power Mosfet Dh50n06 to-220
Contact Now

2045.

50A 60V N-Channel Enhancement Mode Power Mosfet Dh50n06 to-220 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06 DHF50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 650V N-Channel Enhancement Mode Power Mosfet F16n65 to-220f
Contact Now

2046.

16A 650V N-Channel Enhancement Mode Power Mosfet F16n65 to-220f Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT F16N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 16 A (T=100ºC) 10 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

47A 100V N-Channel Enhancement Mode Power Mosfet Dhs180n10lf to-220f
Contact Now

2047.

47A 100V N-Channel Enhancement Mode Power Mosfet Dhs180n10lf to-220f Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 47 A (T=100ºC) 33 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 60V N-Channel Enhancement Mode Power Mosfet Dhf50n06 to-220f
Contact Now

2048.

50A 60V N-Channel Enhancement Mode Power Mosfet Dhf50n06 to-220f Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06 DHF50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

37A 650V N-Channel Sic Power Mosfet S37n65D to-247
Contact Now

2049.

37A 650V N-Channel Sic Power Mosfet S37n65D to-247 Open Details in New Window [Jun 25, 2025]

Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

NPN Epitaxial Silicon Transistor Bu406 to-220c
Contact Now

2050.

NPN Epitaxial Silicon Transistor Bu406 to-220c Open Details in New Window [Jun 23, 2025]

Description BT151 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 68V N-Channel Enhancement Mode Power Mosfet Dh060n07D to-252
Contact Now

2051.

100A 68V N-Channel Enhancement Mode Power Mosfet Dh060n07D to-252 Open Details in New Window [Jun 23, 2025]

Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 90V N-Channel Enhancement Mode Power Mosfet Dh90n045r to-220
Contact Now

2052.

120A 90V N-Channel Enhancement Mode Power Mosfet Dh90n045r to-220 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH90N045R/DHI90N045R/DHE90N045R DHF90N045R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

34mm 75A 1200V Half Bridge IGBT Module
Contact Now

2053.

34mm 75A 1200V Half Bridge IGBT Module Open Details in New Window [Jun 23, 2025]

1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

13A 650V N-Channel Super Junction Power Mosfet Dhsj13n65 to-220c
Contact Now

2054.

13A 650V N-Channel Super Junction Power Mosfet Dhsj13n65 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHSJ13N65//DHISJ13N65/DHESJ13N65/DHBSJ13N65/DHDSJ13N65 DHFSJ15N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

11A 650V N-Channel Super Junction Power Mosfet Dhfsj11n65 to-220f
Contact Now

2055.

11A 650V N-Channel Super Junction Power Mosfet Dhfsj11n65 to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHSJ11N65//DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd