Jiangsu Profile
Product List
2041. 85A 60V N-Channel Enhancement Mode Power MOSFET DHS065N06D TO-252 
[Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ Features Fast ...
2042. 130A 60V N-Channel Enhancement Mode Power MOSFET DHS130N06D TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2043. 140A 80V N-Channel Enhancement Mode Power MOSFET E140N08 TO-263 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 140N08/I140N08/E140N08 F140N08 Drian-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±25 V Drain ...
2044. 10A 700V N-Channel Enhancement Mode Power MOSFET F10N70 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 10N70/I10N70/E10N70 F10N70 Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
2045. 9V Three-Terminal Positive Voltage Regulator IC L7809CV TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT DC Intput Voltage VO=5V-18V VI 35 V VO=24V 40 Output Current IO 1.5 V Thermal resistance junction-air RθJA 65 ºC/W Thermal resistance ...
2046. 4A 800V N-Channel Enhancement Mode Power MOSFET F4N80 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 4N80/I4N80/E4N80 F4N80 Drian-Source Voltage VDSS 800 V Gate-to-Source Voltage VGSS ±30 V Drain ...
2047. 5V Three-Terminal Positive Voltage Regulator IC L7805CV TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT DC Intput Voltage VO=5V-18V VI 35 V VO=24V 40 Output Current IO 1.5 V Thermal resistance junction-air RθJA 65 ºC/W Thermal resistance ...
2048. Silicon Controlled Rectifier THYRISTOR W2P4M TO-252B [Jul 21, 2026]
[Jul 21, 2026] Description 2P4M Micro trigger series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic ...
2049. 10A 150V Schottky Barrier Diode MBR10R150CT TO-252 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL RATING VBR (V) Min 150 typ 175 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.78 max 0.80 IF(A) Single chip package 5.0 IF(A) Dual chip package 10.0 Features High junction temperature ...
2050. 200A 30V N-Channel Enhancement Mode Power MOSFET DH020N03 TO-220 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 200 A BVGSS ±20 V VTH 1 2 V EAS - - 900 mJ Ptot - - 278 W Rdson 2.0 - 2.5 mΩ Features Fast ...
2051. 30A 200V Schottky Barrier Diode HMBR30200CT TO-220 [Jul 21, 2026]
[Jul 21, 2026] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Applications converters free-wheeling diodes reverse battery protection Typical applications are ...
2052. 30A 100V P-Channel Enhancement Mode Power MOSFET DH100P30 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH100P30/DH100P30I/DH100P30E/DH100P30B/DH100P30D DH100P30F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2053. 50A 30V N-Channel Enhancement Mode Power MOSFET DHD50N03 TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHD50N03/DHB50N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
2054. 115A 1200V N-Channel SiC Power MOSFET DHC2M016120Q TO-247 [Jul 21, 2026]
[Jul 21, 2026] 115A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
2055. 33A 60V N-Channel Enhancement Mode Power MOSFET DH240N06LD TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH240N06L/DH240N06LI/DH240N06LE/DH240N06LB/DH240N06LD DH240N06LF Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
