Jiangsu Profile
Product List
1996. High Quality SSR-60 Miniature Solid State Relay Board Safe for Circuit Protection with High Power ... 
[May 06, 2025]
[May 06, 2025] Product Description Solid State Relay High Power Contact Load Capability: Introducing a robust solid state relay engineered to manage substantial power loads, ideal for diverse applications ranging from household ...
1997. Miniature Industrial Multi-Phase Solid State SSR Control Power Relays 5V 5A High Power Switch ... [Apr 18, 2025]
[Apr 18, 2025] Product Description Solid State Relay High-Quality Construction: This SCR power control module is designed with high-quality components, ensuring reliable performance and durability in demanding applications, such as ...
1998. Generator Diesel Generator Set with Permanent Magnet Motor Pmg [Oct 20, 2025]
[Oct 20, 2025] Product Introduction In summary, Lingyu aims to provide you with professional generator spare parts. The quality of our spare parts is very reliable because we use original and genuine spare parts used by original ...
Company: Jiangsu Lingyu Generator Co., Ltd.
1999. 60A 68V N-Channel Enhancement Mode Power Mosfet Dh105n07b to-251 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH105N07/DH105N07I/DH105N07EDH105N07B/DH105N07D DH105N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2000. 50A 60V N-Channel Enhancement Mode Power Mosfet Dh50n06 to-220 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06 DHF50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2001. 16A 650V N-Channel Enhancement Mode Power Mosfet F16n65 to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT F16N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 16 A (T=100ºC) 10 A Drain ...
2002. 47A 100V N-Channel Enhancement Mode Power Mosfet Dhs180n10lf to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 47 A (T=100ºC) 33 A Drain ...
2003. 50A 60V N-Channel Enhancement Mode Power Mosfet Dhf50n06 to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06 DHF50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2004. 37A 650V N-Channel Sic Power Mosfet S37n65D to-247 [Jun 25, 2025]
[Jun 25, 2025] Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives ...
2005. China Supplier Zhendi Manufacturer SCR Thyristor Semiconductor Wafer Price Silicon Wafer 100 Price [Jun 25, 2025]
[Jun 25, 2025] Product Description High-Quality Semiconductor Chips: Discover the unparalleled excellence of zhendi's Round Disc Type Silicon Controlled Rectifier Thyristors Semi-conductor Chips. Engineered for superior performance ...
2006. NPN Epitaxial Silicon Transistor Bu406 to-220c [Jun 23, 2025]
[Jun 23, 2025] Description BT151 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. ...
2007. 120A 90V N-Channel Enhancement Mode Power Mosfet Dh90n045r to-220 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH90N045R/DHI90N045R/DHE90N045R DHF90N045R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2008. 34mm 75A 1200V Half Bridge IGBT Module [Jun 23, 2025]
[Jun 23, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2009. 13A 650V N-Channel Super Junction Power Mosfet Dhsj13n65 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHSJ13N65//DHISJ13N65/DHESJ13N65/DHBSJ13N65/DHDSJ13N65 DHFSJ15N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2010. 11A 650V N-Channel Super Junction Power Mosfet Dhfsj11n65 to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHSJ11N65//DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
