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Positive Voltage Regulators 78L12 Sot-23
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1996.

Positive Voltage Regulators 78L12 Sot-23 Open Details in New Window [Jun 23, 2025]

1 Description The 78LXX series of three-terminal positive regulators employ internal current limiting and thermal shutdown, making them essentially indestructible. If adequate heat-sink is provided, they can ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

64A 60V N-Channel Enhancement Mode Power Mosfet Dhs095n06p Dfn5X6
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1997.

64A 60V N-Channel Enhancement Mode Power Mosfet Dhs095n06p Dfn5X6 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 52 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc75f120m2 to-247plus
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1998.

75A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc75f120m2 to-247plus Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

300A 40V N-Channel Enhancement Mode Power Mosfet Dsu010n04la Toll Package
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1999.

300A 40V N-Channel Enhancement Mode Power Mosfet Dsu010n04la Toll Package Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 228 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

108A 100V N-Channel Enhancement Mode Power Mosfet Dhs051n10p Dfn5X6
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2000.

108A 100V N-Channel Enhancement Mode Power Mosfet Dhs051n10p Dfn5X6 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 75 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 2 4 V EAS - - 620 mJ Ptot - - 180 W Rdson 2.6 - 3.3 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus
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2001.

160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 240 A Collector Current (Tc=100ºC) 160 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

117A 70V N-Channel Enhancement Mode Power Mosfet Dhs043n07p
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2002.

117A 70V N-Channel Enhancement Mode Power Mosfet Dhs043n07p Open Details in New Window [Jun 23, 2025]

Features Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% ΔVDS test Applications Synchronous rectification in SMPS Hard ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30mΩ 650V N-Channel Sic Power Mosfet Dccf030m65g2 to-247-4L
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2003.

30mΩ 650V N-Channel Sic Power Mosfet Dccf030m65g2 to-247-4L Open Details in New Window [Jun 23, 2025]

30mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

200V/11mΩ /110A N-Mosfet Dse108n20na to-263
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2004.

200V/11mΩ /110A N-Mosfet Dse108n20na to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 110 A (T=100ºC) 78 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

55A 650V N-Channel Sic Power Mosfet Dcev030m65g2 to-263-7
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2005.

55A 650V N-Channel Sic Power Mosfet Dcev030m65g2 to-263-7 Open Details in New Window [Jun 23, 2025]

Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives Switch Mode ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

220A 20V N-Channel Enhancement Mode Power Mosfet Dh009n02p Dfn5X6
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2006.

220A 20V N-Channel Enhancement Mode Power Mosfet Dh009n02p Dfn5X6 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 220 A (T=100ºC) 155 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06p Dfn5X6
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2007.

70A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06p Dfn5X6 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH066N06P Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 50 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

54A 30V N-Channel Enhancement Mode Power Mosfet Dh060n03r
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2008.

54A 30V N-Channel Enhancement Mode Power Mosfet Dh060n03r Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS020N88U Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 54 A (T=100ºC) 35 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/4.0mΩ /66A N-Mosfet DSP060n04la Dfn5X6
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2009.

40V/4.0mΩ /66A N-Mosfet DSP060n04la Dfn5X6 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 66 A (T=100ºC) 47 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

240A 85V N-Channel Enhancement Mode Power Mosfet Dhs020n88u
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2010.

240A 85V N-Channel Enhancement Mode Power Mosfet Dhs020n88u Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS020N88U Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 240 A (T=100ºC) 170 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd