Made-in-china.com

Made-in-Jiangsu.com

Home » Featured Products »

Semiconductor

» Jiangsu Product List

Product List

25A 100V N-Channel Enhancement Mode Power MOSFET DHS250N10D TO-252B
Contact Now

1996.

25A 100V N-Channel Enhancement Mode Power MOSFET DHS250N10D TO-252B Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A (T=100ºC) 18 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 100V N-Channel Enhancement Mode Power MOSFET DH10H035R TO-220C
Contact Now

1997.

120A 100V N-Channel Enhancement Mode Power MOSFET DH10H035R TO-220C Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH10H035R/ DHE10H035R DHF10H035R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

47A 100V N-Channel Enhancement Mode Power MOSFET DHS160N100F TO-220F
Contact Now

1998.

47A 100V N-Channel Enhancement Mode Power MOSFET DHS160N100F TO-220F Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12A 100V N-Channel Enhancement Mode Power MOSFET DH850N10D TO-252B
Contact Now

1999.

12A 100V N-Channel Enhancement Mode Power MOSFET DH850N10D TO-252B Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A (T=100ºC) 8 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

90A 30V N-Channel Enhancement Mode Power MOSFET DHD90N03 TO-252B
Contact Now

2000.

90A 30V N-Channel Enhancement Mode Power MOSFET DHD90N03 TO-252B Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DHB90N03 DHD90N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 90 A (T=100ºC) 63 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V N-Channel Enhancement Mode Power MOSFET 20N65 TO-220C
Contact Now

2001.

20A 650V N-Channel Enhancement Mode Power MOSFET 20N65 TO-220C Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT 20N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 0A (T=100ºC) 14 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 100V N-Channel Enhancement Mode Power MOSFET DSB150N10L3 TO-251B
Contact Now

2002.

60A 100V N-Channel Enhancement Mode Power MOSFET DSB150N10L3 TO-251B Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 100V N-Channel Enhancement Mode Power MOSFET DHS037N10F TO-220F
Contact Now

2003.

130A 100V N-Channel Enhancement Mode Power MOSFET DHS037N10F TO-220F Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DHS037N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 130 A (T=100ºC) 110 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

82A 40V N-Channel Enhancement Mode Power MOSFET DSD065N04LA TO-252B
Contact Now

2004.

82A 40V N-Channel Enhancement Mode Power MOSFET DSD065N04LA TO-252B Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 82 A (T=100ºC) 58 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 600V Fast Recovery Diode MUR860CT TO-220C
Contact Now

2005.

8A 600V Fast Recovery Diode MUR860CT TO-220C Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 40V N-Channel Enhancement Mode Power MOSFET DTG018N04N TO-220C
Contact Now

2006.

180A 40V N-Channel Enhancement Mode Power MOSFET DTG018N04N TO-220C Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 180 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 700V N-Channel Enhancement Mode Power MOSFET D10N70 TO-252B
Contact Now

2007.

10A 700V N-Channel Enhancement Mode Power MOSFET D10N70 TO-252B Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V SiC Schottky Barrier Diode DCD20D65G4 TO-252
Contact Now

2008.

20A 650V SiC Schottky Barrier Diode DCD20D65G4 TO-252 Open Details in New Window [Jul 21, 2026]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15V Three-Terminal Negative Voltage Regulator IC L7915CV TO-220
Contact Now

2009.

15V Three-Terminal Negative Voltage Regulator IC L7915CV TO-220 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT DC Intput Voltage VO=-5V~-15V VI -35 V Output Current IO Internally Limited V Thermal resistance junction-air RθJA 65 ºC/W Thermal resistance ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

4A 600V N-Channel Enhancement Mode Power MOSFET D4N60 TO-252
Contact Now

2010.

4A 600V N-Channel Enhancement Mode Power MOSFET D4N60 TO-252 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT 4N60/I4N60/E4N60/B4N60/D4N60 F4N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd