Jiangsu Profile
Product List
1996. Positive Voltage Regulators 78L12 Sot-23 
[Jun 23, 2025]
[Jun 23, 2025] 1 Description The 78LXX series of three-terminal positive regulators employ internal current limiting and thermal shutdown, making them essentially indestructible. If adequate heat-sink is provided, they can ...
1997. 64A 60V N-Channel Enhancement Mode Power Mosfet Dhs095n06p Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 52 A Drain ...
1998. 75A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc75f120m2 to-247plus [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...
1999. 300A 40V N-Channel Enhancement Mode Power Mosfet Dsu010n04la Toll Package [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 228 A Single Pulse Avalanche ...
2000. 108A 100V N-Channel Enhancement Mode Power Mosfet Dhs051n10p Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 75 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 2 4 V EAS - - 620 mJ Ptot - - 180 W Rdson 2.6 - 3.3 mΩ ...
2001. 160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 240 A Collector Current (Tc=100ºC) 160 A Pulsed ...
2002. 117A 70V N-Channel Enhancement Mode Power Mosfet Dhs043n07p [Jun 23, 2025]
[Jun 23, 2025] Features Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% ΔVDS test Applications Synchronous rectification in SMPS Hard ...
2003. 30mΩ 650V N-Channel Sic Power Mosfet Dccf030m65g2 to-247-4L [Jun 23, 2025]
[Jun 23, 2025] 30mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2004. 200V/11mΩ /110A N-Mosfet Dse108n20na to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 110 A (T=100ºC) 78 A Drain ...
2005. 55A 650V N-Channel Sic Power Mosfet Dcev030m65g2 to-263-7 [Jun 23, 2025]
[Jun 23, 2025] Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives Switch Mode ...
2006. 220A 20V N-Channel Enhancement Mode Power Mosfet Dh009n02p Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 220 A (T=100ºC) 155 A Drain ...
2007. 70A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06p Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH066N06P Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 50 A Drain ...
2008. 54A 30V N-Channel Enhancement Mode Power Mosfet Dh060n03r [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS020N88U Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 54 A (T=100ºC) 35 A Drain ...
2009. 40V/4.0mΩ /66A N-Mosfet DSP060n04la Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 66 A (T=100ºC) 47 A Single Pulse Avalanche ...
2010. 240A 85V N-Channel Enhancement Mode Power Mosfet Dhs020n88u [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS020N88U Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 240 A (T=100ºC) 170 A Drain ...
