Jiangsu Profile
Product List
1921. 30A 60V P-Channel Enhancement Mode Power MOSFET DH400P06LD TO-252B 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS -60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...
1922. 19A 80V N-Channel Enhancement Mode Power MOSFET DH300N08D TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH020N03P Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 19 A (T=100ºC) 13 A Drain ...
1923. 8A 500V N-Channel Enhancement Mode Power MOSFET F8N50 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT F8N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...
1924. 5A 800V N-Channel Enhancement Mode Power MOSFET F5N80 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 800 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3 A Drain ...
1925. 25A 100V P-Channel Enhancement Mode Power MOSFET DH100P25D TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH100P25/ DH100P25I/ DH100 P25E/ DH100P25B/ DH100P25D DH100P25F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1926. 160A 120V N-Channel Enhancement Mode Power MOSFET DHS044N12 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 180 (Tc=100ºC) 114 A Drain ...
1927. 30A 100V P-Channel Enhancement Mode Power MOSFET DH100P30AD TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH100P30B Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...
1928. 40A 60V Schottky Barrier Diode MBRF40R60CT TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 60 V RMS Reverse Voltage VR(RMS) 60 V DC Blocking Voltage VR 60 V Average Rectified Forward Current IF(AV) 20 A Repetitive ...
1929. 60A 200V Schottky Barrier Diode MBR60200CT TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V RMS Reverse Voltage VR(RMS) 160 V DC Blocking Voltage VR 200 V Average Rectified Forward Current IF(AV) 60 A Repetitive ...
1930. 12A 650V N-Channel Enhancement Mode Power MOSFET 12N65 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 12N65/I12N65/E12N65 F12N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
1931. 30A 600V Fast Recovery Diode MURF3060 TO-220 [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1932. 31A 600V N-Channel Super Junction Power MOSFET DJC099N60F TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 30.7 A (T=100ºC) 19.4 A Drain ...
1933. 80A 60V N-Channel Enhancement Mode Power MOSFET DATD063N06N TO-252B [Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 60 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 400 mJ Ptot - - 2.5 W Rdson - - 2.2 mΩ Features AEC-Q101 qualified MSL1 ...
1934. 2A 600V N-Channel Enhancement Mode Power MOSFET D2N60 TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT D2N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 2 0A (T=100ºC) 1.3 A Drain ...
1935. 20A 60V Schottky Barrier Diode MBRF2060CT TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 60 V RMS Reverse Voltage VR(RMS) 48 V DC Blocking Voltage VR 60 V Average Rectified Forward Current IF(AV) 10 A Repetitive ...
