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180A 135V N-Channel Enhancement Mode Power Mosfet DSG045n14n to-220c
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1816.

180A 135V N-Channel Enhancement Mode Power Mosfet DSG045n14n to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

D7509, to-220, 80A 75V N-Channel Enhancement Mode Power Mosfet
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1817.

D7509, to-220, 80A 75V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT D7509/ID7509/ED7509 FD7509 Drian-to-Source Voltage VDSS 75 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

21A 650V N-Channel Super Junction Power Mosfet Dhfsj21n65 to-220f
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1818.

21A 650V N-Channel Super Junction Power Mosfet Dhfsj21n65 to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHFSJ21N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 21 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

4A 650V Sic Schottky Barrier Diode Dcgt04D65g4 to-220-2L
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1819.

4A 650V Sic Schottky Barrier Diode Dcgt04D65g4 to-220-2L Open Details in New Window [Jun 23, 2025]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 60V Low Vf Schottkybarrierdiode Mbr40r60CT to-220c
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1820.

40A 60V Low Vf Schottkybarrierdiode Mbr40r60CT to-220c Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 60 typ 72 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.71 max 0.80 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

150V/7.5mΩ /115A N-Mosfet DSG092n15n3a to-220c
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1821.

150V/7.5mΩ /115A N-Mosfet DSG092n15n3a to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

85A 150V N-Channel Enhancement Mode Power Mosfet Dhs110n15D
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1822.

85A 150V N-Channel Enhancement Mode Power Mosfet Dhs110n15D Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 85 A (T=100ºC) 60 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120V/25mΩ /36A N-Mosfet DSG270n12n3 to-220c
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1823.

120V/25mΩ /36A N-Mosfet DSG270n12n3 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 36 A (Tc=100ºC) 23 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

4.8A 650V N-Channel Super Junction Power Mosfet Dhdsj5n65 to-252
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1824.

4.8A 650V N-Channel Super Junction Power Mosfet Dhdsj5n65 to-252 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 4.8 A (T=100ºC) 3.0 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 200V Schottky Barrier Diode Mbrf30200CT to-220f
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1825.

30A 200V Schottky Barrier Diode Mbrf30200CT to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V RMS Reverse Voltage VR(RMS) 160 V DC Blocking Voltage VR 200 V Average Rectified Forward Current TC=120ºC ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

18A 200V N-Channel Enhancement Mode Power Mosfet 18n20 to-220c
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1826.

18A 200V N-Channel Enhancement Mode Power Mosfet 18n20 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 18N20/I18N20/E18N20/B18N20/D18N20 F18N20 Drian-Source Voltage VDS 200 V Gate-to-Source Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V Schottky Barrier Diode Mbrd30100CT to-252b
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1827.

30A 100V Schottky Barrier Diode Mbrd30100CT to-252b Open Details in New Window [Jun 23, 2025]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

83A 600V N-Channel Super Junction Power Mosfet Djc032n60f to-247
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1828.

83A 600V N-Channel Super Junction Power Mosfet Djc032n60f to-247 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 83 A (T=100ºC) 53 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 120V N-Channel Enhancement Mode Power Mosfet Dh150n12 to-220c
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1829.

50A 120V N-Channel Enhancement Mode Power Mosfet Dh150n12 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH150N12 / DH150N12E DH150N12B / DH150N12D DH150N 12F Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120V/12mΩ /70A N-Mosfet DSG140n12n3 to-220c
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1830.

120V/12mΩ /70A N-Mosfet DSG140n12n3 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd