Jiangsu Profile
Product List
1771. 5A 500V N-Channel Enhancement Mode Power MOSFET B5N50 TO-251B 
[Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 5N50/I5N50/E5N50 /B5N50/D5N50 F5N50 Drian-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1772. 12A 100V N-Channel Enhancement Mode Power MOSFET DH850N10D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A (T=100ºC) 8 A Drain ...
1773. 85A 60V N-Channel Enhancement Mode Power MOSFET DH066N06B TO-251 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ ...
1774. 70A 100V N-Channel Enhancement Mode Power MOSFET DHS160N100B TO-251 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1775. 50A 40V P-Channel Enhancement Mode Power MOSFET DH160P04D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS -40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -50 A (T=100ºC) -35 A Drain ...
1776. 68A 100V N-Channel Enhancement Mode Power MOSFET DH140N10 TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH140N10 DH140N10B/ DH140N10D/ DH140N10E DH140N10 F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1777. 80A 300V Fast Recovery Diode MUR80FU30DCT TO-3P [Aug 09, 2026]
[Aug 09, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1778. 105A 85V N-Channel Enhancement Mode Power MOSFET DHS056N85F TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS056N85/ DHS056N85I/DHS056N85E/ DHS056N85B/DHS056N85D DHS056 N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1779. 7A 600V N-Channel Enhancement Mode Power MOSFET F7N60 TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 7N60/I7N60/E7N60/B7N60/D7N60 F7N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
1780. 7.5A 650V N-Channel Enhancement Mode Power MOSFET 8N65 TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 8N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 7.5 A (T=100ºC) 4.8 A Drain ...
1781. 40A 600V Fast Recovery Diode MUR40FU60DCT TO-3PN [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 600 V Working Peak Reverse Voltage VRWM 600 V DC Blocking Voltage VR 600 V Average Rectified Forward ...
1782. 20A 150V Schottky Barrier Diode MBR20R150CT TO-220 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL RATING VBR (V) Min 150 typ 175 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.77 max 0.80 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...
1783. 10A 60V Schottky Barrier Diode MBR1060CT TO-220 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL RATING VBR (V) Min 60 typ 72 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.71 max 0.80 IF(A) Single chip package 5.0 IF(A) Dual chip package 10.0 Features High junction temperature ...
1784. 120A 40V N-Channel Enhancement Mode Power MOSFET DH033N04F TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH033N04 /DH033N04E DH033N04B/DH033N04D DH033N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1785. 110A 200V N-Channel Enhancement Mode Power MOSFET DSG108N20NA TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 110 A (Tc=100ºC) 78 A Drain ...
