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85A 30V P-Channel Enhancement Mode Power MOSFET DHD85P03 TO-252
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1861.

85A 30V P-Channel Enhancement Mode Power MOSFET DHD85P03 TO-252 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH85P03/DHI85P03/DHE85P03/DHB85P03/DHD85P03 DHF85P03 Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

160A 90V N-Channel Enhancement Mode Power MOSFET DHE90N035R TO-263
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1862.

160A 90V N-Channel Enhancement Mode Power MOSFET DHE90N035R TO-263 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH90N035R/DHI90N035R/DHE90N035R DHF90N035R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 60V N-Channel Enhancement Mode Power MOSFET E80N06 TO-263
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1863.

80A 60V N-Channel Enhancement Mode Power MOSFET E80N06 TO-263 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT 80N06/I80N06/E80N06/B80N06/D80N06 F80N06 Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 600V N-Channel Enhancement Mode Power MOSFET F20N60 TO-220F
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1864.

20A 600V N-Channel Enhancement Mode Power MOSFET F20N60 TO-220F Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT 20N60 F20N60 20N60D Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 45V Schottky Barrier Diode MBR2045CT TO-220
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1865.

20A 45V Schottky Barrier Diode MBR2045CT TO-220 Open Details in New Window [Jul 21, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 60V Schottky Barrier Diode MBR4060CT TO-3P
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1866.

40A 60V Schottky Barrier Diode MBR4060CT TO-3P Open Details in New Window [Jul 21, 2026]

SYMBOL RATING VBR (V) Min 60 typ 72 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.71 max 0.80 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 150V Schottky Barrier Diode MBR10150CT TO-252B
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1867.

10A 150V Schottky Barrier Diode MBR10150CT TO-252B Open Details in New Window [Jul 21, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 200V Schottky Barrier Diode MBR10200CT TO-220
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1868.

10A 200V Schottky Barrier Diode MBR10200CT TO-220 Open Details in New Window [Jul 21, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 700V Fast Recovery Diode MUR1070CT TO-220
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1869.

10A 700V Fast Recovery Diode MUR1070CT TO-220 Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 900V N-Channel Enhancement Mode Power MOSFET 20N90D TO-3PN
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1870.

20A 900V N-Channel Enhancement Mode Power MOSFET 20N90D TO-3PN Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 A (T=100ºC) 13.2 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 600V N-Channel Enhancement Mode Power MOSFET 10N60 TO-220
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1871.

10A 600V N-Channel Enhancement Mode Power MOSFET 10N60 TO-220 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT 10N60/I10N60/E10N60 F10N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

45A 300V Fast Recovery Diode MUR4530DCS TO-3P
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1872.

45A 300V Fast Recovery Diode MUR4530DCS TO-3P Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 600V Fast Recovery Diode MUR8060DCT TO-3P
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1873.

80A 600V Fast Recovery Diode MUR8060DCT TO-3P Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 300V Fast Recovery Diode MUR4030DCT TO-3P
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1874.

40A 300V Fast Recovery Diode MUR4030DCT TO-3P Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 200V Fast Recovery Diode MUR4020DCT TO-3P
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1875.

40A 200V Fast Recovery Diode MUR4020DCT TO-3P Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd