Jiangsu Profile
Product List
1906. Custom Quality 500A-600A Triac Module Silicon Controlled Rectifier SCR Thyristor in Stock Original 
[Apr 27, 2025]
[Apr 27, 2025] Product Description Thyristor Module High-Power Capability: Introducing the SKKT 500-600A IGBT Module, a robust and dynamic Silicon Controlled Rectifier (SCR) Thyristor Module. This powerhouse is expertly engineered ...
1907. Custom High Quality 500A-600A IGBT Module Silicon Controlled Rectifier SCR Thyristor in Stock ... [Apr 27, 2025]
[Apr 27, 2025] Product Description Thyristor Module High-Power Capability: The SKKT 500-600A IGBT Module is a high-power Silicon Controlled Rectifier (SCR) Thyristor Module, suitable for HVDC applications, with a maximum current of ...
1908. New Arrival Energy Saving SCR Thyristors Semi-Conductor Chips Rectifier with 1 Year Warranty [Apr 22, 2025]
[Apr 22, 2025] Product Description Introducing our exceptional Round Disc Type Silicon Controlled Rectifier Thyristors Semiconductor Chips by Zhendi, renowned for their unmatched performance and reliability. These high-quality ...
1909. High-Performance Phase Control Semiconductor Device Active Inverters Phased Rectification SCR ... [Apr 18, 2025]
[Apr 18, 2025] Product Description Phase Control Thyristor High-Temperature Resistance: This KP500a KP1000a KP2500a SCR Thyristor Module operates within a wide temperature range of -40°C to 150°C, ensuring reliability and ...
1910. High Quality Kp1300 Phased Rectification Kp Series-Ordinary Distributed Gate Inverter Ceramic ... [Apr 18, 2025]
[Apr 18, 2025] Product Description Phase Control Thyristor High-Temperature Resistance: This KP500a KP1000a KP2500a SCR Thyristor Module operates within a wide temperature range of -40°C to 150°C, ensuring reliability and ...
1911. Kp Ordinary Series Reliable Capsule Type Phase Distribute Gate Design Control Power Thyristor for ... [Apr 18, 2025]
[Apr 18, 2025] Product Description Phase Control Thyristor High-Temperature Resistance: This KP500a KP1000a KP2500a SCR Thyristor Module operates within a wide temperature range of -40°C to 150°C, ensuring reliability and ...
1912. 10A 400V SMD Super Fast Recovery Diode Mur1040 [Oct 26, 2022]
[Oct 26, 2022] Features Low cost Low leakage Low forward voltage drop High current capability Mechanical Data Case: TO-220AC Molding Compound: UL Flammability Classification Rating 94V-0 ...
1913. High-Energy Ion Implanters Used in Integrated Circuits [Nov 10, 2025]
[Nov 10, 2025] Product Description Ion implantation technology has the following characteristics: single-sided collimation doping, good doping uniformity and controllability, singularity of doping elements, and it is very easy to ...
1914. 40V/4.5mΩ /40A N-Mosfet Dsr070n04la [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 40 A (T=100ºC) 40 A Drain ...
1915. 500V/4A Half-Bridge Ipm Dpqb04hb50mfn Esop-9 [Aug 13, 2025]
[Aug 13, 2025] Specification Drain-Source Voltage 500V Continuous Drain Current TC = 25℃(Silicon limit) 4A Power Dissipation (TC = 25℃,Each MOSFET) 32.9 W Operating Junction Temperature -40~150℃ Packing & Delivery Company Profile ...
1916. 500V/3A Half-Bridge Ipm Dpqb03hb50mfn Esop-9 Without Internal Integrated Temperature Detection ... [Aug 12, 2025]
[Aug 12, 2025] Specification Drain-Source Voltage 500V Continuous Drain Current TC = 25℃(Silicon limit) 3A Power Dissipation (TC = 25℃,Each MOSFET) 24.5W Operating Junction Temperature -40~150℃ Packing & Delivery Company Profile ...
1917. N-Channel Enhancement Mode Power Mosfet 7A 650V 7n65 to-220 [Jun 25, 2025]
[Jun 25, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1918. 80A 200V Fast Recovery Diode Mur80fu20dcs to-3pn [Jun 25, 2025]
[Jun 25, 2025] Features Low forward voltage drop Glass Passivated Die Construction Low leakage current High reliability High forward surge current capability Applications Switching Power Supply Power Switching ...
1919. 130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06e to-263 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1920. 60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current (TJ=100ºC) 60 A Pulsed Collector Current ICM 180 A Diode ...
