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5A 1200V SiC Schottky Barrier Diode DCGT05D120G3 TO-220
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1906.

5A 1200V SiC Schottky Barrier Diode DCGT05D120G3 TO-220 Open Details in New Window [Jul 21, 2026]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

5A 1200V SiC Schottky Barrier Diode DCD05D120G3 TO-252
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1907.

5A 1200V SiC Schottky Barrier Diode DCD05D120G3 TO-252 Open Details in New Window [Jul 21, 2026]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12A 700V N-Channel Enhancement Mode Super Junction Power MOSFET DJF360N70T TO-220F
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1908.

12A 700V N-Channel Enhancement Mode Super Junction Power MOSFET DJF360N70T TO-220F Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DHSJ25N65F Drian-to-Source Voltage VDSS 700 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7A 700V N-Channel Enhancement Mode Power MOSFET F7N70 TO-220F
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1909.

7A 700V N-Channel Enhancement Mode Power MOSFET F7N70 TO-220F Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT F7N70 Drian-to-Source Voltage VDSS 700 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 7 A (T=100ºC) 4.4 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7A 700V N-Channel Enhancement Mode Power MOSFET D7N70 TO-252B
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1910.

7A 700V N-Channel Enhancement Mode Power MOSFET D7N70 TO-252B Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT D7N70 Drian-to-Source Voltage VDSS 700 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 7 A (T=100ºC) 4.4 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

21A 100V N-Channel Enhancement Mode Power MOSFET DHS400N10LD TO-252B
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1911.

21A 100V N-Channel Enhancement Mode Power MOSFET DHS400N10LD TO-252B Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DHS400N10LD DHS400N10LB Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 600V Fast Recovery Diode MUR1660CT TO-220C
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1912.

16A 600V Fast Recovery Diode MUR1660CT TO-220C Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

13A 500V N-Channel Enhancement Mode Power MOSFET 13N50 TO-220C
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1913.

13A 500V N-Channel Enhancement Mode Power MOSFET 13N50 TO-220C Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT 13N50/I13N50/E13N50 F13N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

105A 85V N-Channel Enhancement Mode Power MOSFET DHS056N85F TO-220F
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1914.

105A 85V N-Channel Enhancement Mode Power MOSFET DHS056N85F TO-220F Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DHS056N85/ DHS056N85I/DHS056N85E/ DHS056N85B/DHS056N85D DHS056 N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 650V SiC Schottky Barrier Diode DCD10D65G4 TO-252
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1915.

10A 650V SiC Schottky Barrier Diode DCD10D65G4 TO-252 Open Details in New Window [Jul 21, 2026]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 1200V SiC Schottky Barrier Diode DCD10D120G4 TO-252
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1916.

10A 1200V SiC Schottky Barrier Diode DCD10D120G4 TO-252 Open Details in New Window [Jul 21, 2026]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

33A 60V N-Channel Enhancement Mode Power MOSFET DH240N06LB TO-251B
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1917.

33A 60V N-Channel Enhancement Mode Power MOSFET DH240N06LB TO-251B Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH240N06L DH240N06LI/DH240N06LE DH240N06LB/DH240N06LD DH240N06LF Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

17A 650V N-Channel Super Junction Power MOSFET DHFSJ17N65 TO-220F
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1918.

17A 650V N-Channel Super Junction Power MOSFET DHFSJ17N65 TO-220F Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DHSJ17N65/DHESJ17N65 DHFSJ17N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

35A 120V N-Channel Enhancement Mode Power MOSFET DSD270N12N3 TO-252B
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1919.

35A 120V N-Channel Enhancement Mode Power MOSFET DSD270N12N3 TO-252B Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 35 A (Tc=100ºC) 22 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 68V N-Channel Enhancement Mode Power MOSFET DH060N07D TO-252B
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1920.

100A 68V N-Channel Enhancement Mode Power MOSFET DH060N07D TO-252B Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 70 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd