Jiangsu Profile
Product List
1906. 450A 1200V Half Bridge Module Dgd450h120L2t 
[Feb 04, 2026]
[Feb 04, 2026] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1907. IGBT Modules High Quality SCR Thyristor Power Mtc 300A 1600V Thyristor Power Module for Welder [Dec 02, 2025]
[Dec 02, 2025] Product Description Thyristor Module High-Quality Construction: This SCR power control module is designed with high-quality components, ensuring reliable performance and durability in demanding applications, such ...
1908. Dh10h055r to-220 120A 100V N-Channel Enhancement Mode Power Mosfet [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT DH10H055R/DHI10H055R/DHE10H055R DHF10H055R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1909. 20mΩ 650V N-Channel Sic Power Mosfet Dcc020m65g2 to-247-3L [Nov 08, 2025]
[Nov 08, 2025] 20mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1910. 650V 30mΩ N-Channel Sic Power Mosfet Dccf030m65g2 to-247-4L [Nov 08, 2025]
[Nov 08, 2025] 20mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1911. 200V/11mΩ /110A N-Mosfet DSG108n20na to-220c [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 110 A (Tc=100ºC) 78 A Drain ...
1912. 100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
1913. 40V/5.5mΩ /82A N-Mosfet Dsd065n04la to-252b [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 82 A (T=100ºC) 58 A Single Pulse Avalanche ...
1914. 150V/9.5mΩ /52A N-Mosfet Dhs110n15f to-220f [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT DHS110N15/DHS110N15I/DHS110N15E DHS110N15F Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1915. 100V/5.9mΩ /100A N-Mosfet DSG070n10L3 to-220c [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 71 A Single Pulse Avalanche ...
1916. 40V/2.9mΩ /120A N-Mosfet DTG032n04n to-220c [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 117 A Drain ...
1917. 650V 30mΩ N-Channel Sic Power Mosfet to-247-3L [Nov 08, 2025]
[Nov 08, 2025] 30mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1918. 18A 200V N-Channel Enhancement Mode Power Mosfet Dh640 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH640/DHI640/DHE640 DHF640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1919. Insulated Gate Bipolar Transistor IGBT G30n60d to-247 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...
1920. 145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06D to-252b [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH045N06 DH045N06I/DH045N06E DH045N06B/DH045N06D DH045N0 6F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
