Jiangsu Profile
Product List
1786. 60A 68V N-Channel Enhancement Mode Power Mosfet Dh105n07b to-251 
[Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH105N07/DH105N07I/DH105N07EDH105N07B/DH105N07D DH105N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1787. 50A 60V N-Channel Enhancement Mode Power Mosfet Dh50n06 to-220 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06 DHF50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1788. 16A 650V N-Channel Enhancement Mode Power Mosfet F16n65 to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT F16N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 16 A (T=100ºC) 10 A Drain ...
1789. 47A 100V N-Channel Enhancement Mode Power Mosfet Dhs180n10lf to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 47 A (T=100ºC) 33 A Drain ...
1790. 50A 60V N-Channel Enhancement Mode Power Mosfet Dhf50n06 to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06 DHF50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1791. 37A 650V N-Channel Sic Power Mosfet S37n65D to-247 [Jun 25, 2025]
[Jun 25, 2025] Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives ...
1792. NPN Epitaxial Silicon Transistor Bu406 to-220c [Jun 23, 2025]
[Jun 23, 2025] Description BT151 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. ...
1793. 100A 68V N-Channel Enhancement Mode Power Mosfet Dh060n07D to-252 [Jun 23, 2025]
[Jun 23, 2025] Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features Fast ...
1794. 120A 90V N-Channel Enhancement Mode Power Mosfet Dh90n045r to-220 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH90N045R/DHI90N045R/DHE90N045R DHF90N045R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1795. 34mm 75A 1200V Half Bridge IGBT Module [Jun 23, 2025]
[Jun 23, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1796. 13A 650V N-Channel Super Junction Power Mosfet Dhsj13n65 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHSJ13N65//DHISJ13N65/DHESJ13N65/DHBSJ13N65/DHDSJ13N65 DHFSJ15N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1797. 11A 650V N-Channel Super Junction Power Mosfet Dhfsj11n65 to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHSJ11N65//DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1798. 30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30A [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH100P30A DH100P30AI/DH100P30AE DH100P30AB/DH100P30A DH100 P30AF Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1799. 10A 200V Fast Recovery Diode D92-02b to-3p **%off [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V Working Peak Reverse Voltage VRWM 200 V DC Blocking Voltage VR 200 V Average Rectified Forward ...
1800. 80A 60V N-Channel Enhancement Mode Power Mosfet D80n06 to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 80N06/I80N06/E80N06/B80N06/D80N06 F80N06 Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
