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20mΩ 650V N-Channel Sic Power Mosfet Dcc020m65g2 to-247-3L
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1726.

20mΩ 650V N-Channel Sic Power Mosfet Dcc020m65g2 to-247-3L Open Details in New Window [Nov 08, 2025]

20mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

650V 30mΩ N-Channel Sic Power Mosfet Dccf030m65g2 to-247-4L
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1727.

650V 30mΩ N-Channel Sic Power Mosfet Dccf030m65g2 to-247-4L Open Details in New Window [Nov 08, 2025]

20mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

200V/11mΩ /110A N-Mosfet DSG108n20na to-220c
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1728.

200V/11mΩ /110A N-Mosfet DSG108n20na to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 110 A (Tc=100ºC) 78 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b
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1729.

100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/5.5mΩ /82A N-Mosfet Dsd065n04la to-252b
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1730.

40V/5.5mΩ /82A N-Mosfet Dsd065n04la to-252b Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 82 A (T=100ºC) 58 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

150V/9.5mΩ /52A N-Mosfet Dhs110n15f to-220f
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1731.

150V/9.5mΩ /52A N-Mosfet Dhs110n15f to-220f Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT DHS110N15/DHS110N15I/DHS110N15E DHS110N15F Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/5.9mΩ /100A N-Mosfet DSG070n10L3 to-220c
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1732.

100V/5.9mΩ /100A N-Mosfet DSG070n10L3 to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 71 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/2.9mΩ /120A N-Mosfet DTG032n04n to-220c
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1733.

40V/2.9mΩ /120A N-Mosfet DTG032n04n to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 117 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

650V 30mΩ N-Channel Sic Power Mosfet to-247-3L
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1734.

650V 30mΩ N-Channel Sic Power Mosfet to-247-3L Open Details in New Window [Nov 08, 2025]

30mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 68V N-Channel Enhancement Mode Power Mosfet Dh100n06f to-220
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1735.

100A 68V N-Channel Enhancement Mode Power Mosfet Dh100n06f to-220 Open Details in New Window [Jun 25, 2025]

Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features Low on ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

18A 1200V N-Channel Sic Power Mosfet Dhc1m160120d to-3p
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1736.

18A 1200V N-Channel Sic Power Mosfet Dhc1m160120d to-3p Open Details in New Window [Jun 25, 2025]

18A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

4/6/8/12 Inch Silicon Wafer for Mosfet Chips
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1737.

4/6/8/12 Inch Silicon Wafer for Mosfet Chips Open Details in New Window [Jan 03, 2026]

Basic Info Product Description Silicon Wafer Silicon Si uses: used as a semiconductor material high power transistor rectifier ...

Company: Wuxi Kingful Corporation., Ltd

Tec1-12705 Peltier Module for Efficient 12V Cooling Solutions
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1738.

Tec1-12705 Peltier Module for Efficient 12V Cooling Solutions Open Details in New Window [Nov 26, 2025]

Product Description Introducing the TEC1-12705, a highly versatile 40x40mm thermoelectric cooler meticulously crafted to deliver unparalleled thermal management for your cooling needs. Chip Type: Discover the ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

100V/5.6mΩ /103A N-Mosfet Dse065n10L3a to-263
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1739.

100V/5.6mΩ /103A N-Mosfet Dse065n10L3a to-263 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 103 A (T=100ºC) 73 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

IC Dh7107gp 3¹ /2 Digit a/D Converters
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1740.

IC Dh7107gp 3¹ /2 Digit a/D Converters Open Details in New Window [Nov 08, 2025]

The DH7107 are high performance, low power, 31/2 digit A/D converters. Included are seven segment decoders, display drivers, a reference, and a clock. The DH7107 will directly drive an instrument size light emitting ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd