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SMC, 5A, 150V, Schottky Diode Sk515
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1756.

SMC, 5A, 150V, Schottky Diode Sk515 Open Details in New Window [Jun 17, 2025]

SMC,5A,150V,Schottky Diode SK515 Datasheet Products list SURFACE MOUNE SCHOTTKY BARRIER RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum Forward Package ...

Company: Changzhou Shunye Electronics Co., Ltd.

10A, 150V, Schottky Rectifier Diode Mbr10150CT
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1757.

10A, 150V, Schottky Rectifier Diode Mbr10150CT Open Details in New Window [Jun 17, 2025]

10A,40-200V-SCHOTTKY DIODE (TO220 CASE) 10A,150V,Schottky Rectifier Diode MBR10150CT Datasheet Products list SCHOTTKY BARRIER RECTIFIERS TYPE Maximum Peak Maximum Average Maximum ...

Company: Changzhou Shunye Electronics Co., Ltd.

20A, 40V, Schottky Rectifier Diode Mbr2040CT
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1758.

20A, 40V, Schottky Rectifier Diode Mbr2040CT Open Details in New Window [Jun 17, 2025]

20A,20-200V-SCHOTTKY DIODE (TO220 CASE) 20A,40V,Schottky Rectifier Diode MBR2040CT Datasheet Products list SCHOTTKY BARRIER RECTIFIERS TYPE Maximum Peak Maximum Average Maximum ...

Company: Changzhou Shunye Electronics Co., Ltd.

High-Energy Ion Implanters Used in Integrated Circuits
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1759.

High-Energy Ion Implanters Used in Integrated Circuits Open Details in New Window [Feb 28, 2026]

Product Description Ion implantation technology has the following characteristics: single-sided collimation doping, good doping uniformity and controllability, singularity of doping elements, and it is very easy to ...

Company: Jiangsu Himalaya Semiconductor Co., Ltd.

High Temperature Furnace for Si and Sic Oxidation
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1760.

High Temperature Furnace for Si and Sic Oxidation Open Details in New Window [Feb 28, 2026]

Product Description The centrotherm c.OXIDATOR 150 high-temperature oxidation furnace has been developed for the special needs of SiC oxidation but can also be used for silicon oxidation. Thanks to the centrotherm ...

Company: Jiangsu Himalaya Semiconductor Co., Ltd.

1.2mm 1.5mm Thickness Intrinsic Semiconductor Dura420 SUS420J2 Water Ring with Stainless Steel ...
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1761.

1.2mm 1.5mm Thickness Intrinsic Semiconductor Dura420 SUS420J2 Water Ring with Stainless Steel ... Open Details in New Window [Jan 07, 2026]

1.2mm 1.5mm Thickness Intrinsic Semiconductor Dura420 SUS420J2 Water Ring with Stainless Steel Materials Product Description Product Name 6" 8" 12" steel Metal Wafer Frame Ring For ...

Company: Jiangsu Xinyuanxing Metal Products Co., Ltd.

8 Inch HRC45-55 Harden Semiconductor Water Ring Box Cassette for Wafer Paste Blue Film or Fixed ...
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1762.

8 Inch HRC45-55 Harden Semiconductor Water Ring Box Cassette for Wafer Paste Blue Film or Fixed ... Open Details in New Window [Jan 07, 2026]

8 inch HRC45-55 Harden semiconductor Water Ring Box Cassette for Wafer Paste Blue Film or Fixed Crystal Circle Product Description Product Name 6" 8" 12" steel Metal Wafer Frame Ring For ...

Company: Jiangsu Xinyuanxing Metal Products Co., Ltd.

IGBT Modules High Quality SCR Thyristor Power Mtc 300A 1600V Thyristor Power Module for Welder
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1763.

IGBT Modules High Quality SCR Thyristor Power Mtc 300A 1600V Thyristor Power Module for Welder Open Details in New Window [Dec 02, 2025]

Product Description Thyristor Module High-Quality Construction: This SCR power control module is designed with high-quality components, ensuring reliable performance and durability in demanding applications, such ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

40V/1.6mΩ /180A N-Mosfet DSG019n04L to-220c
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1764.

40V/1.6mΩ /180A N-Mosfet DSG019n04L to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 261 A (T=100ºC) 180 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/12mΩ /60A N-Mosfet Dsd150n10L3 to-252b
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1765.

100V/12mΩ /60A N-Mosfet Dsd150n10L3 to-252b Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/1.3mΩ /200A N-Mosfet DSG014n04n to-220c
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1766.

40V/1.3mΩ /200A N-Mosfet DSG014n04n to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/1.7mΩ /240A N-Mosfet DSG024n10n3 to-220c
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1767.

100V/1.7mΩ /240A N-Mosfet DSG024n10n3 to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c
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1768.

30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 95 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/2.6mΩ /180A N-Mosfet DSG031n10n3 to-220c
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1769.

100V/2.6mΩ /180A N-Mosfet DSG031n10n3 to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 158 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120V/25mΩ /36A N-Mosfet DSG270n12n3 to-220c
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1770.

120V/25mΩ /36A N-Mosfet DSG270n12n3 to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 36 A (Tc=100ºC) 23 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd