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1756. Fast Delivery Low Priced SCR Thyristor Triac Semiconductor Chips for Refrigeration Equipment 
[Mar 30, 2026]
[Mar 30, 2026] Product Description Experience unparalleled performance and dependability with zhendi's Round Disc Type Silicon Controlled Rectifier Thyristors Semiconductor Chips. Designed for excellence, they are the perfect ...
1757. Factory Direct Round Disc Type Silver Finish SCR Thyristors Semi-Conductor Chips [Mar 30, 2026]
[Mar 30, 2026] Product Description High-Quality Semiconductor Chips: Elevate your projects with Zhendi's premium Round Disc Type Silicon Controlled Rectifier Thyristors Semi-conductor Chips. Renowned for their outstanding performance ...
1758. High-Performance Wafer Sorting Machines for Enhanced Production Efficiency [Feb 28, 2026]
[Feb 28, 2026] Product Description Wafer Sorter with SECS/GEM Integration Compact, high-speed wafer handling system for 4"-12" wafers. Features dual-arm robot, SECS/GEM communication, and customizable picking (vacuum/Bernoulli). ...
1759. Hot Sale 100V/15mΩ /50A N-Mosfet Dhs180n10ld to-252b [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT DHS180N10LD Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
1760. Hot Sale -100V/33mΩ /-35A P-Channel Enhancement Mode Power Mosfet Dh100p30d to-252b [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT DH100P30D Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -35 A (T=100ºC) -22 A Drain ...
1761. Hot Sale 96A 30V N-Channel Enhancement Mode Power Mosfet Dh030n03 to-220c [Oct 28, 2025]
[Oct 28, 2025] PARAMETER SYMBOL VALUE UNIT DH030N03/DH030N03I/DH030N03E/DH030N03B/DH030N03D DH030N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1762. 112A 68V N-Channel Enhancement Mode Power Mosfet Dh100n06 to-220c [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT DH100N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 112 A (T=100ºC) 81 A Drain ...
1763. NPN Epitaxial Silicon Transistor Tip41c to-220 to-252 [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 3 A *Collector Current ...
1764. Hot Sale 100A 60V N-Channel Enhancement Mode Power Mosfet Dh065n06D to-252 [Jun 30, 2025]
[Jun 30, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 625 mJ Ptot - - 200 W Rdson 5.0 - 6.5 mΩ ...
1765. Hot Sale 33A 60V N-Channel Enhancement Mode Power Mosfet Dh240n06ld to-252b [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH240N06L/DH240N06LI/DH240N06LE/DH240N06LB/DH240N06LD DH240N06LF Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1766. Hot Sale 60A 68V N-Channel Enhancement Mode Power Mosfet Dh105n07D to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH105N07/DH105N07I/DH105N07EDH105N07B/DH105N07D DH105N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1767. Hot Sale 100A 30V N-Channel Enhancement Mode Power Mosfet DHD100n03 to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH100N03/DHI100N03/DHE100N03/DHB100N03/DHD100N03 DHF100N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1768. Hot Sale 650V 4A N-Channel Enhancement Mode Power Mosfet D4n65 to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 4N65/I4N65/E4N65/B4N65/D4N65 F4N65 Drian-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1769. Hot Sale Three-Terminal 1.0A Positive Voltage Regulator 78m15A IC [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT DC Intput Voltage VI 35 V Output Current IO 1.0 V Thermal resistance junction-air RθJA 87 ºC/W Thermal resistance ...
1770. Silicon Controlled Rectifier Thyristor Bt153 to-220 [Jun 23, 2025]
[Jun 23, 2025] Description BT151 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. ...
