Jiangsu Profile
Product List
2011. 68A 100V N-Channel Enhancement Mode Power Mosfet Dh140n10d to-252b 
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH140N10D Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 68 A (T=100ºC) 48 A Drain ...
2012. 1200V 5A Sic Schottky Barrier Diode Dcgt05D120g3 to-220-2 [Jun 23, 2025]
[Jun 23, 2025] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2013. 650V 20A Sic Schottky Barrier Diode Dcgt20d65g4 to-220-2L [Jun 23, 2025]
[Jun 23, 2025] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2014. Hot Sale 100A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06D to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH066N06D Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 63 A Drain ...
2015. 47A 100V N-Channel Enhancement Mode Power Mosfet Dhs180n10lb to-251b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS180N10LB Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 47 A (T=100ºC) 33 A Drain ...
2016. 10A 650V Sic Schottky Barrier Diode Dcgt10d65g4 to-220-2 [Jun 23, 2025]
[Jun 23, 2025] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2017. 68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 51 A Drain ...
2018. 130A 40V N-Channel Enhancement Mode Power Mosfet Dh025n04D to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH025N04 /DH025N04E DH025N04B/DH025N04D DH025N0 4F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2019. Hot Sale 25A 110V N-Channel Enhancement Mode Power Mosfet Dhs250n11d to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 110 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A (T=100ºC) 18 A Drain ...
2020. 65A 1200V N-Channel Sic Power Mosfet Dcev040m120A2 to-263-7 [Jun 23, 2025]
[Jun 23, 2025] Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives Switch Mode ...
2021. 65A 1200V N-Channel Sic Power Mosfet Dcev040m120A2 to-263-7 [Jun 23, 2025]
[Jun 23, 2025] Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives Switch Mode ...
2022. 650V 8A Sic Schottky Barrier Diode Dcgt08d65g4 to-220-2 [Jun 23, 2025]
[Jun 23, 2025] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2023. Hot Sale 80A 40V N-Channel Enhancement Mode Power Mosfet Dh045n04p [Sep 09, 2025]
[Sep 09, 2025] Features Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% ΔVDS test Applications Power switching applications Inverter ...
2024. Semiconductor Hall IC Ah3134 Unipolar Magnetic Sensor Hall Switch [Mar 18, 2025]
[Mar 18, 2025] Features High sensitivity digital output Stable over the entire temperature range Wide operating voltage range: 4.5V ~ 24V Strong resistance to mechanical stress Reverse power supply protection Non-contact ...
Company: Nanjing AH Electronic Science & Technology Co., Ltd.
2025. High Speed Switching Rectifier Diodes [Jan 11, 2025]
[Jan 11, 2025] Schottky diode is precious metals (gold, silver, aluminum, platinum, etc.) A is positive, with N type semiconductor B as anode, using the contact surface forming A barrier rectifier features and made of metal - ...
