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High-Power Industrial Solid State SSR Multi-Phase DC AC Control Power Relays
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2011.

High-Power Industrial Solid State SSR Multi-Phase DC AC Control Power Relays Open Details in New Window [May 07, 2025]

Product Description Solid State Relay High-Power Reliability: Step into a world of superior engineering with this miniature SSR solid state relay, meticulously designed to deliver exceptional reliability. Boasting a ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

200A 85V N-Channel Enhancement Mode Power MOSFET DHS035N88 TO-220
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2012.

200A 85V N-Channel Enhancement Mode Power MOSFET DHS035N88 TO-220 Open Details in New Window [Aug 13, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 92 V ID (T=25ºC) - - 200 A BVGSS ±20 V VTH 2 4 V EAS - - 900 mJ Ptot - - 227 W Rdson 2.5 - 3.0 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 300V Fast Recovery Diode MUR6030DCS TO-3P
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2013.

60A 300V Fast Recovery Diode MUR6030DCS TO-3P Open Details in New Window [Aug 13, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

110A 200V N-Channel Enhancement Mode Power MOSFET DSE108N20NA TO-263
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2014.

110A 200V N-Channel Enhancement Mode Power MOSFET DSE108N20NA TO-263 Open Details in New Window [Aug 13, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 110 A (T=100ºC) 78 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 85V N-Channel Enhancement Mode Power MOSFET DH050N85E TO-263
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2015.

130A 85V N-Channel Enhancement Mode Power MOSFET DH050N85E TO-263 Open Details in New Window [Aug 13, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 85 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 1156 mJ Ptot - - 300 W Rdson - 5 6 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V N-Channel Enhancement Mode Power MOSFET 20N65D TO-3P
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2016.

20A 650V N-Channel Enhancement Mode Power MOSFET 20N65D TO-3P Open Details in New Window [Aug 13, 2026]

PARAMETER SYMBOL VALUE UNIT 20N65D Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 40V N-Channel Enhancement Mode Power MOSFET DTE043N04NA TO-263
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2017.

120A 40V N-Channel Enhancement Mode Power MOSFET DTE043N04NA TO-263 Open Details in New Window [Aug 13, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 120V N-Channel Enhancement Mode Power MOSFET DSE140N12N3 TO-263
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2018.

70A 120V N-Channel Enhancement Mode Power MOSFET DSE140N12N3 TO-263 Open Details in New Window [Aug 13, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 300V Fast Recovery Diode MUR80G30NCT TO-3PN
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2019.

80A 300V Fast Recovery Diode MUR80G30NCT TO-3PN Open Details in New Window [Aug 13, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

81A 30V N-Channel Enhancement Mode Power MOSFET DHP90N03 DFN5*6
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2020.

81A 30V N-Channel Enhancement Mode Power MOSFET DHP90N03 DFN5*6 Open Details in New Window [Aug 10, 2026]

PARAMETER SYMBOL VALUE UNIT DHP90N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 81 A (T=100ºC) 57 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 650V SiC Schottky Barrier Diode DCE08D65G4 TO-263
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2021.

8A 650V SiC Schottky Barrier Diode DCE08D65G4 TO-263 Open Details in New Window [Aug 09, 2026]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

175A 80V N-Channel Enhancement Mode Power MOSFET DHS035N88E TO-263
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2022.

175A 80V N-Channel Enhancement Mode Power MOSFET DHS035N88E TO-263 Open Details in New Window [Aug 09, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 80 V ID (T=25ºC) - - 175 A BVGSS ±20 V VTH 2 4 V EAS - - 1024 mJ Ptot - - 1.67 W Rdson - - 3.3 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V SiC Schottky Barrier Diode DCCT40D120G4 TO-247
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2023.

40A 1200V SiC Schottky Barrier Diode DCCT40D120G4 TO-247 Open Details in New Window [Aug 09, 2026]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 300V Fast Recovery Diode MUR6030NCT TO-3PN
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2024.

60A 300V Fast Recovery Diode MUR6030NCT TO-3PN Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 90V N-Channel Enhancement Mode Power MOSFET DHE90N045R TO-263
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2025.

120A 90V N-Channel Enhancement Mode Power MOSFET DHE90N045R TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH90N045R/DHI90N045R/DHE90N045R DHF90N045R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd