Jiangsu Profile
Product List
2011. 100A 40V N-Channel Enhancement Mode Power Mosfet Dhs008n04p Dfn5X6 
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH019N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 100 A Drain ...
2012. 80V/3.4mΩ /100A N-Mosfet DSP037n08n3 Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 84 A Drain ...
2013. 60A 300V Fast Recovery Diode Mur6030bca to-247s [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2014. 100V/1.8mΩ /272A N-Mosfet Dsu024n10n3a Toll Package [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 272 A (T=100ºC) 192 A Drain ...
2015. 130A 85V N-Channel Enhancement Mode Power Mosfet DSP038n08na Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 130 A (T=100ºC) 92 A Drain ...
2016. 235A 30V N-Channel Enhancement Mode Power Mosfet Dh012n03u Toll Package [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 235 A (T=100ºC) 148 A Drain ...
2017. 100V/1.15mΩ /373A N-Mosfet Dsu014n10n3a Toll Package [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 458 A (T=100ºC) 324 A Drain ...
2018. 170A 85V N-Channel Enhancement Mode Power Mosfet DSP032n08na Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 85 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 120 A Drain ...
2019. 100A 40V N-Channel Enhancement Mode Power Mosfet DSP018n04la Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 100 A Drain ...
2020. 35V/0.58mΩ /355A N-Mosfet DSP007n03la Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 35 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 355 A (T=100ºC) 251 A Drain ...
2021. 70A 60V N-Channel Enhancement Mode Power Mosfet dATP057n06n Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 50 A Drain ...
2022. Hot Sale Wxdh Brand Triac T0410 to-251 [Jun 23, 2025]
[Jun 23, 2025] Description 4A TRIAC series triacs with low holding and latchingcurrent are especially recommended for use onmiddle and small resistance type power load. 2 Features High current output up to 4A Low ...
2023. China Manufacturing SMD dB107 dB107s 1A 1000V Diode Rectifier Bridge [Mar 30, 2022]
[Mar 30, 2022] Parameter Symbol DB101S DB102S DB1I03S DB104S D6105S DB1O6S DB107S unit Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS bridge input ...
2024. dB101s dB104s dB107s Bridge Rectifier 1A 50V~1000V Transistor [Jun 28, 2021]
[Jun 28, 2021] Specifications 1A Glass Passivated Bridge Rectifiers DB101(S)-DB107(S) Features: 1)We are professional diode manufacturer 2)High Quality,Competitive Price 3)Flexible business mode Product ...
2025. Reliable Thyristor Triac Modules for Rectifier Inverter Application Wholesale Cheap Price [Jul 24, 2025]
[Jul 24, 2025] Product Description Thyristor Module Durable Construction: Experience unrivaled durability with the SCR SKKT500 Triac Module, engineered to withstand the harshest conditions. With an impressive operating temperature ...
