Jiangsu Profile
Product List
2011. 4A 800V N-Channel Enhancement Mode Power Mosfet B4n80 to-251b 
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT B4N80 Drian-to-Source Voltage VDSS 800 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 4 A (T=100ºC) 2.5 A Drain ...
2012. 30A 60V Low Vf Schottky Barrier Diode Mbr30r60cts to-220c [Jun 23, 2025]
[Jun 23, 2025] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
2013. 80A 68V N-Channel Enhancement Mode Power Mosfet Dh072n07e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH072N07/DH072N07I/DH072N07E/ DH072N07B/DH072N07D DH072N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2014. 30A 600V Fast Recovery Diode Mur30fu60DCT to-3p [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2015. 30A 400V Fast Recovery Diode Mur3040ncs to-3pn [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2016. 175A 80V N-Channel Enhancement Mode Power Mosfet Dhs035n88e to-263 [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 80 V ID (T=25ºC) - - 175 A BVGSS ±20 V VTH 2 4 V EAS - - 1024 mJ Ptot - - 1.67 W Rdson - - 3.3 mΩ Features Fast ...
2017. 1200V 20A Sic Schottky Barrier Diode Dcct20d120g4 to-247-2L [Jun 23, 2025]
[Jun 23, 2025] 20A 1200V SiC Schottky Barrier Diode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2018. China Manufacturing SMD dB107 dB107s 1A 1000V Diode Rectifier Bridge [Mar 30, 2022]
[Mar 30, 2022] Parameter Symbol DB101S DB102S DB1I03S DB104S D6105S DB1O6S DB107S unit Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS bridge input ...
2019. dB101s dB104s dB107s Bridge Rectifier 1A 50V~1000V Transistor [Jun 28, 2021]
[Jun 28, 2021] Specifications 1A Glass Passivated Bridge Rectifiers DB101(S)-DB107(S) Features: 1)We are professional diode manufacturer 2)High Quality,Competitive Price 3)Flexible business mode Product ...
2020. 40V/4.5mΩ /40A N-Mosfet Dsr070n04la [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 40 A (T=100ºC) 40 A Drain ...
2021. 60A 68V N-Channel Enhancement Mode Power Mosfet Dh105n07b to-251 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH105N07/DH105N07I/DH105N07EDH105N07B/DH105N07D DH105N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2022. 50A 60V N-Channel Enhancement Mode Power Mosfet Dh50n06 to-220 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06 DHF50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2023. 16A 650V N-Channel Enhancement Mode Power Mosfet F16n65 to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT F16N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 16 A (T=100ºC) 10 A Drain ...
2024. 47A 100V N-Channel Enhancement Mode Power Mosfet Dhs180n10lf to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 47 A (T=100ºC) 33 A Drain ...
2025. 50A 60V N-Channel Enhancement Mode Power Mosfet Dhf50n06 to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06 DHF50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
