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12A 650V N-Channel Enhancement Mode Power Mosfet 12n65 to-220c
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1111.

12A 650V N-Channel Enhancement Mode Power Mosfet 12n65 to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 12N65/I12N65/E12N65 F12N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06D to-252b
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1112.

145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06D to-252b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH045N06 DH045N06I/DH045N06E DH045N06B/DH045N06D DH045N0 6F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

9A 650V N-Channel Enhancement Mode Power Mosfet D9n65 to-252b
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1113.

9A 650V N-Channel Enhancement Mode Power Mosfet D9n65 to-252b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

25A 650V N-Channel Super Junction Power Mosfet Dhsj25n65f to-220f
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1114.

25A 650V N-Channel Super Junction Power Mosfet Dhsj25n65f to-220f Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHSJ25N65F Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 200V Fast Recovery Diode Mur2020CT to-220c
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1115.

20A 200V Fast Recovery Diode Mur2020CT to-220c Open Details in New Window [Jun 24, 2024]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

5A 500V N-Channel Enhancement Mode Power Mosfet D5n50 to-252b
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1116.

5A 500V N-Channel Enhancement Mode Power Mosfet D5n50 to-252b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 500 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.1 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/5.5mΩ /82A N-Mosfet Dsd065n04la to-252b
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1117.

40V/5.5mΩ /82A N-Mosfet Dsd065n04la to-252b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 82 A (T=100ºC) 58 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

25A 100V N-Channel Enhancement Mode Power Mosfet D25n10 to-252b
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1118.

25A 100V N-Channel Enhancement Mode Power Mosfet D25n10 to-252b Open Details in New Window [Jun 24, 2024]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 V ID (T=25ºC) - 30 A BVGSS ±20 V VTH 2 4 V EAS - - 36 mJ Ptot - - 88 W Features Fast Switching Low ON Resistance Low ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 60V N-Channel Enhancement Mode Power Mosfet Datd063n06n to-252b
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1119.

80A 60V N-Channel Enhancement Mode Power Mosfet Datd063n06n to-252b Open Details in New Window [Jun 24, 2024]

SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 60 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 400 mJ Ptot - - 2.5 W Rdson - - 2.2 mΩ Features AEC-Q101 qualified MSL1 ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12A 100V N-Channel Enhancement Mode Power Mosfet Dh850n10d to-252b
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1120.

12A 100V N-Channel Enhancement Mode Power Mosfet Dh850n10d to-252b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A (T=100ºC) 8 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

18A 500V N-Channel Enhancement Mode Power Mosfet 18n50 to-220c
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1121.

18A 500V N-Channel Enhancement Mode Power Mosfet 18n50 to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 18N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 18 A (T=100ºC) 11 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7.6A 650V N-Channel Super Junction Power Mosfet Dhfsj8n65 to-220f
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1122.

7.6A 650V N-Channel Super Junction Power Mosfet Dhfsj8n65 to-220f Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHFSJ8N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 7.6 A (T=100ºC) 4.8 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 700V N-Channel Enhancement Mode Power Mosfet D10n70 to-252b
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1123.

10A 700V N-Channel Enhancement Mode Power Mosfet D10n70 to-252b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

210A 60V N-Channel Enhancement Mode Power Mosfet N6005
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1124.

210A 60V N-Channel Enhancement Mode Power Mosfet N6005 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT N6005/IN6005/EN6005 FN6005 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Insulated Gate Bipolar Transistor IGBT G30n60d to-247
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1125.

Insulated Gate Bipolar Transistor IGBT G30n60d to-247 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd