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35A, 50-1000V--Diode Bridge Silicon--Kbpc3508
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1111.

35A, 50-1000V--Diode Bridge Silicon--Kbpc3508 Open Details in New Window [Mar 20, 2026]

35A,50-1000V--Diode bridge silicon--KBPC35005 ------- KBPC3510 Datasheet Products list TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum Forward Package Reversee Rectified ...

Company: Changzhou Shunye Electronics Co., Ltd.

Rectifier Diode Rl107
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1112.

Rectifier Diode Rl107 Open Details in New Window [Mar 06, 2026]

1A,1000V-SILICON RECTIFIER-RL107 Datasheet Products list SILICON RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum Forward Package Reversee Rectified Prak ...

Company: Changzhou Shunye Electronics Co., Ltd.

35A, 50-1000V--Diode Bridge Silicon--Kbpc35005
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1113.

35A, 50-1000V--Diode Bridge Silicon--Kbpc35005 Open Details in New Window [Mar 06, 2026]

35A,50-1000V--bridge silicon Diode --KBPC35005 --KBPC3510(MB35005-MB3510) Datasheet Products list TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum ...

Company: Changzhou Shunye Electronics Co., Ltd.

35A, 50-1000V--Diode Bridge Silicon--Kbpc3502
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1114.

35A, 50-1000V--Diode Bridge Silicon--Kbpc3502 Open Details in New Window [Mar 06, 2026]

35A,50-1000V--Diode bridge silicon--KBPC35005 ------- KBPC3510 Datasheet Products list TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum Forward Package Reversee Rectified ...

Company: Changzhou Shunye Electronics Co., Ltd.

400W, Tvs Diode P4ke200A
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1115.

400W, Tvs Diode P4ke200A Open Details in New Window [Mar 06, 2026]

400W TVS P4KE6.8CA TO P6KE440A Datasheet Products list TRANSIENT VOLTAGE SUPPRESSORS TYPE Breakdown Voltage Stand-off Voltage Maximum Reverse Leakage @VRWM Maximum Peak ...

Company: Changzhou Shunye Electronics Co., Ltd.

SMB Rectifier Diode S8m
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1116.

SMB Rectifier Diode S8m Open Details in New Window [Mar 06, 2026]

8A,1000V-High Voltage RECTIFIER-S8M Datasheet Products list SURFACE MOUNE SILICON RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum Forward Package ...

Company: Changzhou Shunye Electronics Co., Ltd.

600W, Tvs Diode P6ke440A
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1117.

600W, Tvs Diode P6ke440A Open Details in New Window [Dec 11, 2025]

600W TVS P4KE6.8CA TO P6KE440A Datasheet Products list TRANSIENT VOLTAGE SUPPRESSORS TYPE Breakdown Voltage Stand-off Voltage Maximum Reverse Leakage @VRWM Maximum Peak ...

Company: Changzhou Shunye Electronics Co., Ltd.

400W, Tvs Diode P4ke440A
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1118.

400W, Tvs Diode P4ke440A Open Details in New Window [Dec 11, 2025]

400W TVS P4KE6.8CA TO P6KE440A Datasheet Products list TRANSIENT VOLTAGE SUPPRESSORS TYPE Breakdown Voltage Stand-off Voltage Maximum Reverse Leakage @VRWM Maximum Peak ...

Company: Changzhou Shunye Electronics Co., Ltd.

600W, Tvs Diode Smbj60A
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1119.

600W, Tvs Diode Smbj60A Open Details in New Window [Nov 20, 2025]

600W TVS SMBJ6.8CA TO SMBJ440A Datasheet Products list SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS TYPE Breakdown Voltage Stand-off Voltage Maximum Reverse Leakage @VRWM Maximum Peak ...

Company: Changzhou Shunye Electronics Co., Ltd.

170A 85V N-Channel Enhancement Mode Power MOSFET DSP032N08NA DFN5X6
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1120.

170A 85V N-Channel Enhancement Mode Power MOSFET DSP032N08NA DFN5X6 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 85 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 120 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGF30F65M2 TO-247
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1121.

30A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGF30F65M2 TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 60 A Collector Current (TJ=100ºC) 30 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 650V Trench FS IGBT G50T65D TO-3PN
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1122.

50A 650V Trench FS IGBT G50T65D TO-3PN Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 40V N-Channel Enhancement Mode Power MOSFET DHS008N04P DFN5X6
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1123.

100A 40V N-Channel Enhancement Mode Power MOSFET DHS008N04P DFN5X6 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH019N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 100 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 45V Schottky Barrier Diode MBR1045CT TO-220M
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1124.

10A 45V Schottky Barrier Diode MBR1045CT TO-220M Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 5 IF(A) Dual chip package 10 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

160A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGCP160H65L2 TO-247PLUS
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1125.

160A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGCP160H65L2 TO-247PLUS Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 240 A Collector Current (Tc=100ºC) 160 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd