Jiangsu Profile
Product List
1111. D92-02A to-3pn 10A 200V Fast Recovery Diode 
[Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V Working Peak Reverse Voltage VRWM 200 V DC Blocking Voltage VR 200 V Average Rectified Forward ...
1112. 10A 650V N-Channel Enhancement Mode Power Mosfet DHD10n65 to-252 [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT DHB10N65/DHD10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...
1113. 85A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06D to-252 [Aug 01, 2025]
[Aug 01, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ Features Fast ...
1114. 36A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-247 [Jun 23, 2025]
[Jun 23, 2025] 36A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
1115. Hot Sale 96A 30V N-Channel Enhancement Mode Power Mosfet Dh030n03 to-220c [Oct 28, 2025]
[Oct 28, 2025] PARAMETER SYMBOL VALUE UNIT DH030N03/DH030N03I/DH030N03E/DH030N03B/DH030N03D DH030N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1116. 40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT DHB80N03/DHD80N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) (Silicon limit) 76 ID(T=25ºC) ...
1117. Hot Sale Triac Thyristor Bt137 to-252 [Nov 28, 2025]
[Nov 28, 2025] Description BT137 series triacs with low holding and latchingcurrent are especially recommended for use onmiddle and small resistance type power load. TO-220F provides insulation voltage rated at 2000V RMS ...
1118. Diesel Generator Set Diode Module of Rsk Series Models Rsk1001, Rsk2001, Rsk5001, Rsk6001 [Sep 29, 2025]
[Sep 29, 2025] Product Introduction Place of Origin: Jiangsu, China (Mainland) Brand Name: LINGYU Model Number: RSK6001 Type: Rectifier Diode, Bridge Rectifier Package Type: Surface Mount weight: 0.07kg Package: Carton box ...
Company: Jiangsu Lingyu Generator Co., Ltd.
1119. Generator Accessories Rectifier Diode Forward and Reverse Diesel Generator Parts 500kVA1000kVA ... [Sep 29, 2025]
[Sep 29, 2025] Product Introduction Place of Origin: Jiangsu, China (Mainland) Brand Name: LINGYU Model Number: RSK6001 Type: Rectifier Diode, Bridge Rectifier Package Type: Surface Mount weight: 0.07kg Package: Carton box ...
Company: Jiangsu Lingyu Generator Co., Ltd.
1120. 70A 200V Fast Recovery Diode Mur7020DCT to-3p [Sep 02, 2025]
[Sep 02, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1121. 50A 150V N-Channel Enhancement Mode Power Mosfet Dh50n15 to-220 [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT DH50N15/DHI50N15/DHE50N15 DHF50N15 Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1122. 68A 1200V N-Channel Sic Power Mosfet Dcc040m120A2 to-247-3L [Jun 23, 2025]
[Jun 23, 2025] 68A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...
1123. 20A 650V N-Channel Enhancement Mode Power Mosfet 20n65D to-3p [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT 20N65D Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
1124. 16A 200V Fast Recovery Diode Mur1620CT to-252 [Aug 01, 2025]
[Aug 01, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1125. 145A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04p Dfn5*6-8 [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 145 A (T=100ºC) 101 A Drain ...
