Jiangsu Profile
Product List
1381. 80A 300V Fast Recovery Diode Mur80fu30bct to-247 
[Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1382. 50A 200V N-Channel Enhancement Mode Power Mosfet Dhf50n20 to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHF50N20 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±25 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
1383. Dhs020n85 to-220 180A 85V N-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS020N85/DHS020N85E DHS020N85D/DHS020N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
1384. 0.8A 600V N-Channel Enhancement Mode Power Mosfet D1n60 to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 1N60/I1N60/E1N60/B1N60/D1N60 F1N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
1385. 7A 600V N-Channel Enhancement Mode Power Mosfet F7n60 to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 7N60/I7N60/E7N60/B7N60/D7N60 F7N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
1386. 155A 40V N-Channel Enhancement Mode Power Mosfet DHD035n04 to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH035N04/DHI035N04/DHE035N04/DHB035N04/DHD035N04 DHF035N04 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1387. 4A 600V N-Channel Enhancement Mode Power Mosfet D4n60 to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 4N60/I4N60/E4N60/B4N60/D4N60 F4N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
1388. 600V 12A N-Channel Enhancement Mode Power Mosfet 12n60 to-220 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 12N60/I12N60/ E12N60 F12N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
1389. 8A 700V N-Channel Enhancement Mode Power Mosfet Dhf8n70 to-220 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 8N70/I8N70/E8N70 DHF8N70 Drian-to-Source Voltage VDSS 700 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1390. 105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS056N85/DHS056N85I/DHS056N85E/DHS056N85B/DHS056N85D DHS056N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1391. 140A 90V N-Channel Enhancement Mode Power Mosfet Dh140n09 to-220 [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 90 - 97 V ID (T=25ºC) - - 140 A BVGSS ±20 V VTH 2 4 V EAS - - 1080 mJ Ptot - - 250 W Rdson 6.5 - 7.5 mΩ ...
1392. Insulated Gate Bipolar Transistor IGBT G25t120d to-247 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 50 A Collector Current (Tc=100ºC) 25 A Pulsed ...
1393. 80A 80V N-Channel Enhancement Mode Power Mosfet Dhe80n08 to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH80N08/DHI80N08/DHE80N08/DHB80N08/DHD80N08 DHF80N08 Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...
1394. 40A 200V Fast Recovery Diode Mur4020DCT to-3p [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1395. 20A 200V Schottky Barrier Diode Mbr20200CT to-220 [Jun 23, 2025]
[Jun 23, 2025] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
