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10A 650V N-Channel Enhancement Mode Power Mosfet DHD10n65 to-252
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1381.

10A 650V N-Channel Enhancement Mode Power Mosfet DHD10n65 to-252 Open Details in New Window [Aug 01, 2025]

PARAMETER SYMBOL VALUE UNIT DHB10N65/DHD10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

85A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06D to-252
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1382.

85A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06D to-252 Open Details in New Window [Aug 01, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

DHD150n03 to-252 150A 30V N-Channel Enhancement Mode Power Mosfet
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1383.

DHD150n03 to-252 150A 30V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Jun 30, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 45 V ID (T=25ºC) - - 50 A BVGSS ±20 V VTH 1 2 V EAS - - 121 mJ Ptot - - 52 W Rdson 14.5 - 20.0 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 650V N-Channel Enhancement Mode Power Mosfet Dhi10n65 to-262
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1384.

10A 650V N-Channel Enhancement Mode Power Mosfet Dhi10n65 to-262 Open Details in New Window [Jun 30, 2025]

PARAMETER SYMBOL VALUE UNIT 10N65/I10N65/E10N65 F10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Advanced Thyristor Module with High-Quality Diode and Rectifier Semiconductor
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1385.

Advanced Thyristor Module with High-Quality Diode and Rectifier Semiconductor Open Details in New Window [Jun 26, 2025]

Product Description Thyristor Module High Power Handling Capacity: Experience the future of power management with our groundbreaking N and P-Channel SCR Thyristor Control Power Module. This module is engineered to ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

Premium Thyristor Module with Diode and Rectifier Semiconductor Technology
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1386.

Premium Thyristor Module with Diode and Rectifier Semiconductor Technology Open Details in New Window [Jun 26, 2025]

Product Description Thyristor Module High Power Handling Capacity: Discover the awe-inspiring capabilities of our innovative N and P-Channel SCR Thyristor Control Power Module. Expertly engineered for the most ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

Wholesale Price Mdk 55A 1600V Thyristor Module for Rectifiers
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1387.

Wholesale Price Mdk 55A 1600V Thyristor Module for Rectifiers Open Details in New Window [Jun 26, 2025]

Product Description Thyristor Module High Power Handling Capacity: Discover our revolutionary N and P-Channel SCR Thyristor Control Power Module, purpose-built for the most rigorous high-power demands. With a ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

20A 45V Schottky Barrier Diode Mbr2045CT to-220
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1388.

20A 45V Schottky Barrier Diode Mbr2045CT to-220 Open Details in New Window [Jun 25, 2025]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 200V Schottky Barrier Diode Mbr10200CT to-220
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1389.

10A 200V Schottky Barrier Diode Mbr10200CT to-220 Open Details in New Window [Jun 25, 2025]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

2A 650V N-Channel Enhancement Mode Power Mosfet B2n65 to-251
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1390.

2A 650V N-Channel Enhancement Mode Power Mosfet B2n65 to-251 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT 2N65/I2N65/E2N65/B2N65/D2N65 F2N65 Drian-Source Voltage VDS 650 V Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 80V N-Channel Enhancement Mode Power Mosfet DHD80n08 to-252
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1391.

80A 80V N-Channel Enhancement Mode Power Mosfet DHD80n08 to-252 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH80N08/DHI80N08/DHE80N08/DHB80N08/DHD80N08 DHF80N08 Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

160A 60V N-Channel Enhancement Mode Power Mosfet Dh150n06 to-220
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1392.

160A 60V N-Channel Enhancement Mode Power Mosfet Dh150n06 to-220 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH150N06/DHI150N06/DHE150N06 DH150N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

F740 to-220f 10A 400V N-Channel Enhancement Mode Power Mosfet
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1393.

F740 to-220f 10A 400V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT 740/I740/E740/B740/D740 F740 Drian-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 100V Schottky Barrier Diode Mbr40100CT to-220
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1394.

40A 100V Schottky Barrier Diode Mbr40100CT to-220 Open Details in New Window [Jun 25, 2025]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85D to-252
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1395.

105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85D to-252 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHS056N85/DHS056N85I/DHS056N85E/DHS056N85B/DHS056N85D DHS056N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd