Jiangsu Profile
Product List
1471. 20A 500V N-Channel Enhancement Mode Power Mosfet 20n50b to-247 
[Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT 20N50/I20N50/E20N50/20N50B F20N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
1472. 50A 60V N-Channel Enhancement Mode Power Mosfet Dh60n06 to-220 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH60N06/DHI60N06/DHE60N06/ DHB60N06/DHD60N06 DHF60N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1473. 500V 5A N-Channel Enhancement Mode Power Mosfet F5n50 to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT 5N50/I5N50/E5N50 /B5N50/D5N50 F5N50 Drian-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1474. 30A 45V Low Vf Schottky Barrier Diode Mbr30r45cts to-220c [Jun 25, 2025]
[Jun 25, 2025] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
1475. 8A 700V N-Channel Enhancement Mode Power Mosfet Dhdsj8n70 to-252b [Jun 25, 2025]
[Jun 25, 2025] Features Fast switching Low on resistance(Rdson≤0.6Ω) Low gate charge(Typ: 16nC) Low reverse transfer capacitances(Typ: 3.1pF) 100% Single Pulse Avalanche Energy Test 100% ΔVDS ...
1476. 105A 150V N-Channel Enhancement Mode Power Mosfet Dhs110n15 to-220c & Dhs110n15D to-252b [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DHS110N15/DHS110N15I/DHS110N15E DHS110N15F Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1477. 7A 650V N-Channel Super Junction Power Mosfet Dhfsj7n65 to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DHSJ7N65/DHISJ7N65/DHESJ7N65/DHBSJ7N65/DHDSJ7N65 DHFSJ7N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1478. 10A 400V Fast Recovery Diode Mur1040CT to-220 [Jun 25, 2025]
[Jun 25, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1479. 85A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06 to-220 [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ ...
1480. 7A 600V N-Channel Enhancement Mode Power Mosfet 7n60 to-220 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 7N60/I7N60/E7N60/B7N60/D7N60 F7N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
1481. 80A 300V Fast Recovery Diode Mur80fu30bct to-247 [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1482. 50A 200V N-Channel Enhancement Mode Power Mosfet Dhf50n20 to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHF50N20 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±25 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
1483. Dhs020n85 to-220 180A 85V N-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS020N85/DHS020N85E DHS020N85D/DHS020N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
1484. 0.8A 600V N-Channel Enhancement Mode Power Mosfet D1n60 to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 1N60/I1N60/E1N60/B1N60/D1N60 F1N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
1485. 7A 600V N-Channel Enhancement Mode Power Mosfet F7n60 to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 7N60/I7N60/E7N60/B7N60/D7N60 F7N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
