Jiangsu Profile
Product List
1471. 15A 40V P-Channel Enhancement Mode Power Mosfet Aod413 to-252 
[Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDSS -40 V Maximum Gate-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -15 A (T=100ºC) -12 A Drain ...
1472. 16A 200V Fast Recovery Diode Mur1620CT to-220 **%off [Nov 28, 2025]
[Nov 28, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1473. 20A 150V Schottky Barrier Diode Mbr20150CT to-220 [Nov 28, 2025]
[Nov 28, 2025] SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 10 IF(A) Dual chip package 20 Features High junction temperature ...
1474. Low Forward Voltage Silicon Rectifier Diode with 1000V Rating [Nov 26, 2025]
[Nov 26, 2025] Product Description Rectifier Diode The General Purpose Rectifier Diode series (1N4001-1N4007) is celebrated for its remarkable features, including a low forward voltage drop, outstanding high current capability, ...
1475. Versatile Silicon Diode Rectifier with 30ua Max Reverse Current [Nov 26, 2025]
[Nov 26, 2025] Product Description Rectifier Diode Our General Purpose Rectifier Diode series, ranging from 1N4001 to 1N4007, boasts an impressive array of features, including a remarkably low forward voltage drop,exceptional high ...
1476. High Voltage Silicon Diode Rectifier with 30ua Reverse Current Limit [Nov 26, 2025]
[Nov 26, 2025] Product Description Rectifier Diode The General Purpose Rectifier Diode series (1N4001-1N4007) is engineered to deliver unmatched performance, highlighted by its exceptionally low forward voltage drop,robust high ...
1477. Durable Silicon Diode Rectifier with 1000V Max Reverse Voltage [Nov 26, 2025]
[Nov 26, 2025] Product Description Rectifier Diode The General Purpose Rectifier Diode series (1N4001-1N4007) boasts an impressive array of features, such as a remarkably low forward voltage drop, exceptional high current ...
1478. Silicon Rectifier Diode with 30ua Reverse Current and 1 1V Forward [Nov 26, 2025]
[Nov 26, 2025] Product Description Rectifier Diode Introducing our General Purpose Rectifier Diode series, ranging from 1N4001 through 1N4007. This series is renowned for its exceptional performance, offering a seamless blend of ...
1479. 1 1V Forward Voltage Silicon Rectifier Diode for High Voltage Applications [Nov 26, 2025]
[Nov 26, 2025] Product Description Rectifier Diode Introducing our versatile General Purpose Rectifier Diode series (1N4001-1N4007), renowned for its exceptionally low forward voltage drop,impressive high current capability, ...
1480. 1000V Max Reverse Voltage Silicon Diode Rectifier for Electronics [Nov 26, 2025]
[Nov 26, 2025] Product Description Rectifier Diode Our versatile General Purpose Rectifier Diode series (1N4001-1N4007) is engineered to perfection, boasting attributes such as a remarkably low forward voltage drop, impressive ...
1481. 75A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc75f65m to-247 [Oct 28, 2025]
[Oct 28, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...
1482. 160A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n85 to-220 [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT DHS025N85/DHS025N85E DHS025N85D/DHS025N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
1483. 60A 400V Fast Recovery Diode Mur6040DCT to-3p [Sep 01, 2025]
[Sep 01, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1484. Dh180n10 to-220 180A 100V N-Channel Enhancement Mode Power Mosfet [Aug 01, 2025]
[Aug 01, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 109 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1760 mJ Ptot - - 346 W Rdson 4.3 - 5.5 mΩ ...
1485. 10A 650V N-Channel Enhancement Mode Power Mosfet DHD10n65 to-252 [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT DHB10N65/DHD10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...
