Jiangsu Profile
Product List
1546. 30A 200V Schottky Barrier Diode Mbrf30200CT to-220f 
[Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V RMS Reverse Voltage VR(RMS) 160 V DC Blocking Voltage VR 200 V Average Rectified Forward Current TC=120ºC ...
1547. 8A 700V N-Channel Enhancement Mode Power Mosfet F8n70 to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHF8N70 Drian-to-Source Voltage VDSS 700 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...
1548. 150V 150A N-Channel Enhancement Mode Power Mosfet DSG059n15na to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 106 A Drain ...
1549. 180A 135V N-Channel Enhancement Mode Power Mosfet DSG045n14n to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
1550. 120A 40V N-Channel Enhancement Mode Power Mosfet DTG045n04na to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...
1551. 140A 30V P-Channel Enhancement Mode Power Mosfet Dh060p03 to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH060P 03F DH060P03/DH060P03E/ DH060P03B/DH060P03D Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1552. 70A 650V N-Channel Super Junction Power Mosfet Djc070n65m2 to-247 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...
1553. 68V/7.2mΩ /80A N-Mosfet Dtd080n07n to-252b [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 51 A Drain ...
1554. 120V/25mΩ /36A N-Mosfet DSG270n12n3 to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 36 A (Tc=100ºC) 23 A Drain ...
1555. 50A 120V N-Channel Enhancement Mode Power Mosfet Dh150n12 to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH150N12 / DH150N12E DH150N12B / DH150N12D DH150N 12F Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1556. 33A 60V N-Channel Enhancement Mode Power Mosfet Dhf60n06 to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 33 A (T=100ºC) 22 A Drain ...
1557. 40V/1.6mΩ /180A N-Mosfet DSG019n04L to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 261 A (T=100ºC) 180 A Drain ...
1558. -140A -60V P-Channel Enhancement Mode Power Mosfet DTG050p06la to-220c [Jun 24, 2024]
[Jun 24, 2024] SYMBOL VALUE UNIT Min Typ. Max BVDSS -60 - -70 V ID (T=25ºC) - - -140 A BVGSS ±20 V VTH -1 -3 V EAS - - 1369 mJ Ptot - - 2.5 W Rdson 14 - 5.8 mΩ ...
1559. 120V/12mΩ /70A N-Mosfet DSG140n12n3 to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...
1560. Phase Control Three Phase Control Thyristor Skt760/16e Skt1200/16e 1600V Thyristor ... [Jun 05, 2025]
[Jun 05, 2025] Product Description Phase Control Thyristor High-Temperature Resistance: Our KP500a KP1000a KP2500a SCR Thyristor Module stands out with its exceptional ability to function flawlessly across a broad temperature ...
