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150V/9.5mΩ /52A N-Mosfet Dhs110n15f to-220f
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1576.

150V/9.5mΩ /52A N-Mosfet Dhs110n15f to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS110N15/DHS110N15I/DHS110N15E DHS110N15F Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 60V Low Vf Schottky Barrier Diode Hmbr20r60
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1577.

20A 60V Low Vf Schottky Barrier Diode Hmbr20r60 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 60 V RMS Reverse Voltage VR(RMS) 42 V DC Blocking Voltage VR 60 V Average Rectified Forward Current IF(AV) 20 A Repetitive ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc20f65m2 to-247-3L
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1578.

20A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc20f65m2 to-247-3L Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 650V Sic Schottky Barrier Diode Dcc60d65g3 to-247
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1579.

60A 650V Sic Schottky Barrier Diode Dcc60d65g3 to-247 Open Details in New Window [Jun 23, 2025]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 135V N-Channel Enhancement Mode Power Mosfet DSG052n14n to-220c
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1580.

180A 135V N-Channel Enhancement Mode Power Mosfet DSG052n14n to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 180 (Tc=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

18A 500V N-Channel Enhancement Mode Power Mosfet 18n50 to-220c
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1581.

18A 500V N-Channel Enhancement Mode Power Mosfet 18n50 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 18N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 18 A (T=100ºC) 11 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

1200V 5A Sic Schottky Barrier Diode Dcd05D120g3 to-252
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1582.

1200V 5A Sic Schottky Barrier Diode Dcd05D120g3 to-252 Open Details in New Window [Jun 23, 2025]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 60V P-Channel Enhancement Mode Power Mosfet Dh500p06D to-252b
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1583.

20A 60V P-Channel Enhancement Mode Power Mosfet Dh500p06D to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH500P06/ DH500P06E/ DH500P06B/ DH500P06D DH500P06F Drian-to-Source Voltage VDSS -60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

9A 200V N-Channel Enhancement Mode Power Mosfet 630 to-220c
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1584.

9A 200V N-Channel Enhancement Mode Power Mosfet 630 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 630/I630/E630/B630/D630 F630 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 68V N-Channel Enhancement Mode Power Mosfet Dh060n07D to-252b
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1585.

100A 68V N-Channel Enhancement Mode Power Mosfet Dh060n07D to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 70 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

650V 30A N-Channel Sic Power Mosfet Dcc060m65g2 to-247-3L
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1586.

650V 30A N-Channel Sic Power Mosfet Dcc060m65g2 to-247-3L Open Details in New Window [Jun 23, 2025]

30A 650V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 60V Low Vf Schottky Barrier Diode Hmbrd20r60 to-252
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1587.

20A 60V Low Vf Schottky Barrier Diode Hmbrd20r60 to-252 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 60 V RMS Reverse Voltage VR(RMS) 42 V DC Blocking Voltage VR 60 V Average Rectified Forward Current IF(AV) 20 A Repetitive ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

140A 30V P-Channel Enhancement Mode Power Mosfet Dh060p03D to-252b
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1588.

140A 30V P-Channel Enhancement Mode Power Mosfet Dh060p03D to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH060P 03F DH060P03/DH060P03E/ DH060P03B/DH060P03D Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg15t65dlbbf to-220
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1589.

15A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg15t65dlbbf to-220 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current (TJ=100ºC) 15 A Pulsed Collector Current ICM 60 A Diode Continuous ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04D to-252b
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1590.

180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04D to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS021N04/DHS021N04E/DHS021N04B/DHS021N04D DHS021 N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd