Jiangsu Profile
Product List
1531. 100V/1.7mΩ /240A N-Mosfet Dse022n10n3 to-263 
[Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...
1532. 200V/11mΩ /110A N-Mosfet Dsn108n20n to-3pn [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 110 A (Tc=100ºC) 78 A Drain ...
1533. 100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
1534. 40V/0.85mΩ /200A N-Mosfet Dse012n04na to-263 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...
1535. 20mΩ 650V N-Channel Sic Power Mosfet Dccf020m65g2 to-247-4L [Nov 08, 2025]
[Nov 08, 2025] 20mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1536. 100V/5.5mΩ /100A N-Mosfet Dsd065n10L3a to-252 [Nov 08, 2025]
[Nov 08, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 100 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 306 mJ Ptot - - 115 W Rdson - - 5.5 mΩ Features AEC-Q101 ...
1537. 150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...
1538. 85V/2.9mΩ /215A N-Mosfet Dh025n08 to-220c [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 215 A (T=100ºC) 136 A Drain ...
1539. 120V/12mΩ /70A N-Mosfet Dse140n12n3 to-263 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...
1540. 20A 400V Fast Recovery Diode Mur2040CT to-220 [Sep 29, 2025]
[Sep 29, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1541. 250A 88V N-Channel Enhancement Mode Power Mosfet Dhs020n88 to-220 [Sep 01, 2025]
[Sep 01, 2025] PARAMETER SYMBOL VALUE UNIT DHS020N88/DHS020N88I/DHS020N88E DHS020N85F Drian-to-Source Voltage VDSS 88 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
1542. SMB, Schottky Barrier Rectifier Diode SMB Case Ss36 [Aug 12, 2025]
[Aug 12, 2025] 3A,60V-SCHOTTKY DIODE-SS36/SK36(SMB CASE) Datasheet Products list SURFACE MOUNE SCHOTTKY BARRIER RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum ...
1543. SMB, Schottky Rectifier Diode 3A 40V SMB Case Ss34 [Aug 12, 2025]
[Aug 12, 2025] 3A,40V-SCHOTTKY DIODE-SS34/SK34(SMB CASE) Datasheet Products list SURFACE MOUNE SCHOTTKY BARRIER RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum ...
1544. Durable SCR Thyristor IGBT Power Module Semiconductor Module Standard Configuration for Long-Term ... [Jul 31, 2025]
[Jul 31, 2025] Product Description Factory Direct Pricing: At Zhenjiang Zhendi Electric Technology Co., Ltd, we pride ourselves on offering factory-direct pricing. As a trusted direct manufacturer, we eliminate the need for ...
1545. China Supplier Zhendi Manufacturer SCR Thyristor Control Power Module Designed for N and P-Channel ... [Jul 31, 2025]
[Jul 31, 2025] Product Description Thyristor Module High Power Handling Capacity: Discover our revolutionary semiconductor module crafted for the most rigorous high-power applications. With a stunning peak repetitive reverse voltage ...
