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80A 60V N-Channel Enhancement Mode Power Mosfet D80n06 to-252
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1531.

80A 60V N-Channel Enhancement Mode Power Mosfet D80n06 to-252 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 80N06/I80N06/E80N06/B80N06/D80N06 F80N06 Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Dh10h055r to-220 120A 100V N-Channel Enhancement Mode Power Mosfet
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1532.

Dh10h055r to-220 120A 100V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH10H055R/DHI10H055R/DHE10H055R DHF10H055R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 60V N-Channel Enhancement Mode Power Mosfet Dh50n06 to-220
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1533.

50A 60V N-Channel Enhancement Mode Power Mosfet Dh50n06 to-220 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06 DHF50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

210A 60V N-Channel Enhancement Mode Power Mosfet Dhe027n06 to-263
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1534.

210A 60V N-Channel Enhancement Mode Power Mosfet Dhe027n06 to-263 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH027N06/DHI027N06/DHE027N06/DH027N06D/DH027N06B DHF027N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 650V N-Channel Enhancement Mode Power Mosfet F16n65 to-220f
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1535.

16A 650V N-Channel Enhancement Mode Power Mosfet F16n65 to-220f Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT F16N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 16 A (T=100ºC) 10 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 40V N-Channel Enhancement Mode Power Mosfet Dh025n04e to-263
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1536.

130A 40V N-Channel Enhancement Mode Power Mosfet Dh025n04e to-263 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH025N04 /DH025N04E DH025N04B/DH025N04D DH025N0 4F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

-85A -60V P-Channel Enhancement Mode Power Mosfet Dtd125p06la to-252
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1537.

-85A -60V P-Channel Enhancement Mode Power Mosfet Dtd125p06la to-252 Open Details in New Window [Jun 24, 2024]

Features High density cell design for ultra low Rdson 175°C operating temperature Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 400V Fast Recovery Diode Mur80fu40nct to-3pn
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1538.

80A 400V Fast Recovery Diode Mur80fu40nct to-3pn Open Details in New Window [Jun 24, 2024]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

D7509, to-220, 80A 75V N-Channel Enhancement Mode Power Mosfet
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1539.

D7509, to-220, 80A 75V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT D7509/ID7509/ED7509 FD7509 Drian-to-Source Voltage VDSS 75 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 1200V Fast Recovery Diode Mur15fu120 to-220c-2L
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1540.

15A 1200V Fast Recovery Diode Mur15fu120 to-220c-2L Open Details in New Window [Jun 24, 2024]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/1.3mΩ /200A N-Mosfet DSG014n04n to-220c
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1541.

40V/1.3mΩ /200A N-Mosfet DSG014n04n to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 30V N-Channel Enhancement Mode Power Mosfet Dh033n03D to-252
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1542.

100A 30V N-Channel Enhancement Mode Power Mosfet Dh033n03D to-252 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH033N03/DH033N03I/DH033N03E/DH033N03B/DH033N03D DH033N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V Schottky Barrier Diode Mbrd30100CT to-252b
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1543.

30A 100V Schottky Barrier Diode Mbrd30100CT to-252b Open Details in New Window [Jun 24, 2024]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

11A 650V N-Channel Super Junction Power Mosfet Dhfsj11n65 to-220f
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1544.

11A 650V N-Channel Super Junction Power Mosfet Dhfsj11n65 to-220f Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHSJ11N65//DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

37A 650V N-Channel Sic Power Mosfet S37n65D to-247
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1545.

37A 650V N-Channel Sic Power Mosfet S37n65D to-247 Open Details in New Window [Jun 24, 2024]

Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd