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5A 800V N-Channel Enhancement Mode Power MOSFET F5N80 TO-220F
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1426.

5A 800V N-Channel Enhancement Mode Power MOSFET F5N80 TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 800 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 600V Fast Recovery Diode MUR1060CT TO-220C
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1427.

10A 600V Fast Recovery Diode MUR1060CT TO-220C Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 60V Schottky Barrier Diode MBRF2060CT TO-220F
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1428.

20A 60V Schottky Barrier Diode MBRF2060CT TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 60 V RMS Reverse Voltage VR(RMS) 48 V DC Blocking Voltage VR 60 V Average Rectified Forward Current IF(AV) 10 A Repetitive ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 30V N-Channel Enhancement Mode Power MOSFET DHD50N03 TO-252B
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1429.

50A 30V N-Channel Enhancement Mode Power MOSFET DHD50N03 TO-252B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHD50N03/DHB50N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

25A 650V N-Channel Super Junction Power MOSFET DHSJ25N65F TO-220F
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1430.

25A 650V N-Channel Super Junction Power MOSFET DHSJ25N65F TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHSJ25N65F Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 60V Schottky Barrier Diode MBR30R60CTS TO-220C
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1431.

30A 60V Schottky Barrier Diode MBR30R60CTS TO-220C Open Details in New Window [Aug 09, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7A 800V N-Channel Super Junction Power MOSFET DHDSJ7N80 TO-252
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1432.

7A 800V N-Channel Super Junction Power MOSFET DHDSJ7N80 TO-252 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHSJ7N80/DHISJ7N80/DHESJ7N80/DHBSJ7N80/DHDSJ7N80 DHFSJ7N80 Drian-to-Source Voltage VDSS 800 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 60V P-Channel Enhancement Mode Power MOSFET DH500P06D TO-252B
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1433.

20A 60V P-Channel Enhancement Mode Power MOSFET DH500P06D TO-252B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH500P06/ DH500P06E/ DH500P06B/ DH500P06D DH500P06F Drian-to-Source Voltage VDSS -60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 1200V Half Bridge IGBT Module DGA75H120M2T 34MM
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1434.

75A 1200V Half Bridge IGBT Module DGA75H120M2T 34MM Open Details in New Window [Aug 09, 2026]

1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 100V N-Channel Enhancement Mode Power MOSFET DH10H035R TO-220C
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1435.

120A 100V N-Channel Enhancement Mode Power MOSFET DH10H035R TO-220C Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH10H035R/ DHE10H035R DHF10H035R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

9A 200V N-Channel Enhancement Mode Power MOSFET 630 TO-220C
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1436.

9A 200V N-Channel Enhancement Mode Power MOSFET 630 TO-220C Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT 630/I630/E630/B630/D630 F630 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 120V N-Channel Enhancement Mode Power MOSFET DH150N12D TO-252B
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1437.

50A 120V N-Channel Enhancement Mode Power MOSFET DH150N12D TO-252B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 50 (Tc=100ºC) 35 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

5A 1200V SiC Schottky Barrier Diode DCD05D120G3 TO-252
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1438.

5A 1200V SiC Schottky Barrier Diode DCD05D120G3 TO-252 Open Details in New Window [Aug 09, 2026]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V P-Channel Enhancement Mode Power MOSFET DH100P30 TO-220C
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1439.

30A 100V P-Channel Enhancement Mode Power MOSFET DH100P30 TO-220C Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH100P30/DH100P30I/DH100P30E/DH100P30B/DH100P30D DH100P30F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

47A 100V N-Channel Enhancement Mode Power MOSFET DHS160N100F TO-220F
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1440.

47A 100V N-Channel Enhancement Mode Power MOSFET DHS160N100F TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd