Jiangsu Profile
Product List
631. 10A 150V Low Schottky Barrier Diode Mbr10r150CT to-252 
[Jun 24, 2024]
[Jun 24, 2024] SYMBOL RATING VBR (V) Min 150 typ 175 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.78 max 0.80 IF(A) Single chip package 5.0 IF(A) Dual chip package 10.0 Features High junction temperature ...
632. 12A 100V N-Channel Enhancement Mode Power Mosfet DHD10n10 to-252 [Jun 24, 2024]
[Jun 24, 2024] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 109 V ID (T=25ºC) - - 12 A BVGSS ±20 V VTH 1.5 2.6 V EAS - - 16 mJ Ptot - - 28 W Rdson 76 - 95 mΩ ...
633. 15A 60V N-Channel Enhancement Mode Power Mosfet Dhz24 to-220 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHZ24/DHIZ24/DHEZ24/DHBZ24/DHDZ24 DHFZ24 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
634. 16A 100V Schottky Barrier Diode Mbr16100CT to-220 [Jun 24, 2024]
[Jun 24, 2024] SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.79 max 0.85 IF(A) Single chip package 8 IF(A) Dual chip package 16 Features High junction temperature ...
635. Three-Terminal 1.0A Positive Voltage Regulator IC 78m12A to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL RATING UNIT DC Intput Voltage VI 35 V Output Current IO 1.0 V Thermal resistance junction-air RθJA 87 ºC/W Thermal resistance ...
636. 40A 150V Schottky Barrier Diode Mbr40150CT to-263 [Jun 24, 2024]
[Jun 24, 2024] SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...
637. 60A 300V Fast Recovery Diode Mur6030dcs to-3p [Jun 24, 2024]
[Jun 24, 2024] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
638. 80A 400V Fast Recovery Diode Mur80fu40bct to-247 [Jun 24, 2024]
[Jun 24, 2024] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
639. 20A 150V Low Schottky Barrier Diode Mbr20r150CT to-220 [Jun 24, 2024]
[Jun 24, 2024] SYMBOL RATING VBR (V) Min 150 typ 175 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.77 max 0.80 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...
640. 10A 100V Schottkybarrierdiode Mbr10100CT to-220m [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 100 V RMS Reverse Voltage VR(RMS) 80 V DC Blocking Voltage VR 100 V Average Rectified Forward Current IF(AV) 5 A Repetitive ...
641. 20A 100V Low Schottky Barrier Diode Mbr20r100CT to-220 [Jun 24, 2024]
[Jun 24, 2024] SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.64 max 0.73 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...
642. 70A 100V N-Channel Enhancement Mode Power Mosfet Fd70n20 to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT D70N10/ID70N10/ED70N10/BD70N10/DD70N10 FD70N10 Drian-Source Voltage VDS 100 V Gate-Source Voltage VGS ±25 V Drain ...
643. 650V 12A N-Channel Enhancement Mode Power Mosfet F12n65 to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 12N65/I12N65/E12N65 F12N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
644. 10A 45V Schottky Barrier Diode Mbr1045CT to-220m [Jun 24, 2024]
[Jun 24, 2024] SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 5 IF(A) Dual chip package 10 Features High junction temperature ...
645. 20A 150V Schottky Barrier Diode Mbr20150CT to-220 [Jun 24, 2024]
[Jun 24, 2024] SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 10 IF(A) Dual chip package 20 Features High junction temperature ...
